公开(公告)号：US20140273813A1

公开(公告)日：2014-09-18

申请号：US14288624

申请日：2014-05-28

Applicant: Samsung Electronics Co., Ltd. ,  Industry-Academic Cooperation Foundation, Yonsei University

Inventor： Chang Soon PARK ,  Young Soo KIM ,  Hyo Sun HWANG ,  Sung Yeon KIM ,  Jeong Ahn KWON ,  Jang Won LEE

IPC: H04W52/02 ,  H04W88/04 ,  H04W4/00

CPC classification number: H04W52/0216 ,  H04W4/80 ,  H04W76/28 ,  H04W84/12 ,  H04W88/04 ,  Y02D70/00 ,  Y02D70/10 ,  Y02D70/14 ,  Y02D70/144 ,  Y02D70/164

Abstract: Provided are a hub, a relay node, and a node for reconfiguring an active time position of a node in a WBAN. An active time position of the node may be reconfigured based on information associated with an active time position of a candidate relay node that the node desires to use as a relay node.

Abstract translation: 提供了一种集线器，中继节点和用于重新配置WBAN中的节点的活动时间位置的节点。 可以基于与节点希望用作中继节点的候选中继节点的活动时间位置相关联的信息来重新配置节点的活动时间位置。

公开(公告)号：US20150043402A1

公开(公告)日：2015-02-12

申请号：US14176573

申请日：2014-02-10

Applicant: INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY ,  SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chang Soon PARK ,  Young Soo KIM ,  Hyo Sun HWANG ,  Jang Won LEE ,  Sung Yeon KIM ,  Hyun Sik JUNG

IPC: H04W52/02

CPC classification number: H04W52/0229 ,  H04W52/0216 ,  Y02D70/144

Abstract: A communication method of a transmission node includes generating information of a transmission unavailable time period of the transmission node in a reception available time period of a reception node, and transmitting, to the reception node, the information of the transmission unavailable time period. The reception node operates in a sleep state based on the information of the transmission unavailable time period.

Abstract translation: 发送节点的通信方法包括：在接收节点的接收可用时间段内生成发送节点的发送不可用时间的信息，向接收节点发送发送不可用时间的信息。 接收节点基于传输不可用时间段的信息工作在休眠状态。

公开(公告)号：US20190273130A1

公开(公告)日：2019-09-05

申请号：US16419153

申请日：2019-05-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun Ho YOON ,  Won Chul LEE ,  Sung Yeon KIM ,  Jae Hong PARK ,  Chan Hoon PARK ,  Yong Moon JANG ,  Je Woo HAN

IPC: H01L49/02 ,  H01L21/283 ,  H01L21/033 ,  H01L21/311

Abstract: Provided is a method of fabricating a semiconductor device. The method includes forming an oxide film on a target layer, forming a first mask film on the oxide film, wherein the first mask film contains a semiconductor material and has a first thickness and a first etch selectivity with respect to the oxide film, forming a second mask film on the first mask film, wherein the second mask film contains a metal and has a second thickness smaller than the first thickness and a second etch selectivity larger than the first etch selectivity with respect to the oxide film, forming a second mask film pattern by patterning the second mask film, forming a first mask film pattern by patterning the first mask film, etching some portions of the oxide film by using the second mask film pattern as an etch mask film, and etching the rest of the oxide film by using the first mask film pattern as an etch mask film to form a hole, wherein the target layer is exposed via the hole.

公开(公告)号：US20180108728A1

公开(公告)日：2018-04-19

申请号：US15626271

申请日：2017-06-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun Ho YOON ,  Won Chul LEE ,  Sung Yeon KIM ,  Jae Hong PARK ,  Chan Hoon PARK ,  Yong Moon JANG ,  Je Woo HAN

IPC: H01L49/02 ,  H01L21/311 ,  H01L21/283

CPC classification number: H01L28/60 ,  H01L21/283 ,  H01L21/31105 ,  H01L21/31116 ,  H01L21/31144

Abstract: Provided is a method of fabricating a semiconductor device. The method includes forming an oxide film on a target layer, forming a first mask film on the oxide film, wherein the first mask film contains a semiconductor material and has a first thickness and a first etch selectivity with respect to the oxide film, forming a second mask film on the first mask film, wherein the second mask film contains a metal and has a second thickness smaller than the first thickness and a second etch selectivity larger than the first etch selectivity with respect to the oxide film, forming a second mask film pattern by patterning the second mask film, forming a first mask film pattern by patterning the first mask film, etching some portions of the oxide film by using the second mask film pattern as an etch mask film, and etching the rest of the oxide film by using the first mask film pattern as an etch mask film to form a hole, wherein the target layer is exposed via the hole.