公开(公告)号：US20250133842A1

公开(公告)日：2025-04-24

申请号：US18754976

申请日：2024-06-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung Wook LIM ,  Sung Hyuck CHO

IPC: H01L27/146

Abstract: An image sensor includes a pixel array including a plurality of unit pixels and a driving circuitry provided around the pixel array and driving the plurality of unit pixels. Each of the plurality of unit pixels includes a first region ad a second region. The first region includes a first photodiode, a first transfer transistor connected to the first photodiode, a first floating diffusion node connected to the first transfer transistor, and a (1-1)-th contact connected to a second floating diffusion node, and the second region includes a second photodiode, a second transfer transistor connected to the second photodiode, a (1-2)-th contact electrically connected to the (1-1)-th contact through connection metal wiring, and a second contact provided to a third floating diffusion node connected to the second transfer transistor.

公开(公告)号：US20240284061A1

公开(公告)日：2024-08-22

申请号：US18524586

申请日：2023-11-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Wook LIM

IPC: H04N25/59 ,  H04N25/46 ,  H04N25/766

CPC classification number: H04N25/59 ,  H04N25/46 ,  H04N25/766 ,  H04N25/7795

Abstract: An image sensing device includes a pixel array including a plurality of unit pixels, and a driving unit configured to drive each unit pixel of the plurality of unit pixels. Each unit pixel comprises: a first region including a first photodiode, a first floating diffusion region, and a second floating diffusion region, a second region including a second photodiode and a third floating diffusion region, and a floating diffusion (FD) connecting transistor connected to any one of the first floating diffusion region, the second floating diffusion region or the third floating diffusion region. The driving unit is configured to alternately perform a normal operation of individually operating the plurality of unit pixels, and a binning operation of grouping at least two unit pixels of the plurality of unit pixels and operating the at least two unit pixels simultaneously.

公开(公告)号：US20230395621A1

公开(公告)日：2023-12-07

申请号：US18119685

申请日：2023-03-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung Wook LIM ,  Seo Joo KIM ,  So Eun PARK ,  Sung Hyuck CHO

IPC: H01L27/146

CPC classification number: H01L27/14612 ,  H01L27/14643 ,  H01L27/14603

Abstract: An image sensor including a plurality of pixels, wherein each pixel of the plurality of pixels comprises: a first sub-pixel comprising a first photoelectric conversion area, a first floating diffusion area, and a first transfer transistor configured to transfer charges accumulated in the first photoelectric conversion area to the first floating diffusion area; and a second sub-pixel disposed adjacent to the first sub-pixel and comprising a second photoelectric conversion area, a second floating diffusion area and a second transfer transistor configured to transfer charges accumulated in the second photoelectric conversion area to the second floating diffusion area, wherein the first transfer transistor comprises a first transfer gate, wherein the second transfer transistor comprises a second transfer gate, and wherein the second transfer gate comprises a vertical multi-gate

公开(公告)号：US20230369375A1

公开(公告)日：2023-11-16

申请号：US18104877

申请日：2023-02-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung Wook LIM ,  Joong Seok PARK ,  Dong Suk YOO

IPC: H01L27/146 ,  H04N25/59 ,  H04N25/76

CPC classification number: H01L27/14643 ,  H01L27/14612 ,  H04N25/59 ,  H04N25/7795

Abstract: An image sensor is provided. The image sensor comprises a photodiode, a transmission transistor having a first end connected to the photodiode and a second end connected to a first node, a first switching transistor having a first end connected to the first node, a first capacitor having a first electrode connected to a second end of the first switching transistor, a second capacitor having a first electrode connected to the first node. A second electrode of the first capacitor is configured to receive a power voltage, and a second electrode of the second capacitor is configured to receive a boosting signal.

公开(公告)号：US20230369357A1

公开(公告)日：2023-11-16

申请号：US18355427

申请日：2023-07-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Bin Yun ,  Eun Sub SHIM ,  Kyung Ho LEE ,  Sung Ho CHOI ,  Jung Hoon PARK ,  Jung Wook LIM ,  Min Ji JUNG

IPC: H01L27/146 ,  H04N25/70 ,  H04N25/778

CPC classification number: H01L27/14605 ,  H01L27/14627 ,  H01L27/14641 ,  H04N25/70 ,  H04N25/778

Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.

公开(公告)号：US20250058711A1

公开(公告)日：2025-02-20

申请号：US18933619

申请日：2024-10-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Wook LIM ,  Young Gu Jin

IPC: B60R1/22 ,  H01L27/146

Abstract: A unit pixel includes a first photoelectric converter, a first transfer transistor disposed between to the first photoelectric converter and a first node, a connection transistor disposed between and connected to a second node and the first node, a second transfer transistor disposed between and connected to a third node and the second node, a second photoelectric converter connected to the third node, and a storage metal-oxide semiconductor (MOS) capacitor connected to the third node. The storage MOS capacitor stores charges from the second photoelectric converter. For a first time period, first charges accumulated in the first photoelectric converter are transferred to the first node, for a second time period, second charges accumulated in the first photoelectric converter are transferred to the first node and the second node, and for a third time period, third charges accumulated in the second photoelectric converter are transferred to the first to third nodes.

公开(公告)号：US20240234452A9

公开(公告)日：2024-07-11

申请号：US18315982

申请日：2023-05-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Wook LIM

IPC: H01L27/146

CPC classification number: H01L27/14612 ,  H01L27/14603 ,  H01L27/1463 ,  H01L27/14636

Abstract: An image sensor comprises a first sub-pixel comprising a first photoelectric conversion region, a first floating diffusion region, and a first transfer transistor to transfer charges accumulated in the first photoelectric conversion region to the first floating diffusion region; and a second sub-pixel adjacent to the first sub-pixel, and comprising a second photoelectric conversion region, a second floating diffusion region, and a second transfer transistor to transfer charges accumulated in the second photoelectric conversion region to the second floating diffusion region. The first photoelectric conversion region may comprise a first and a second sub-region partitioned by a potential level isolation region that blocks movement of charges, and the first transfer transistor may comprise a first sub-transfer transistor to transfer charges accumulated in the first sub-region to the first floating diffusion region, and a second sub-transfer transistor to transfer charges accumulated in the second sub-region to the first floating diffusion region.

公开(公告)号：US20230224608A1

公开(公告)日：2023-07-13

申请号：US18068781

申请日：2022-12-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung Wook LIM

IPC: H04N25/77 ,  H04N25/47 ,  H04N25/709

CPC classification number: H04N25/77 ,  H04N25/47 ,  H04N25/709

Abstract: A unit pixel includes a first photoelectric conversion unit configured to generate first charges in response to a first incident light, a first transfer transistor connected between the first photoelectric conversion unit and a first node, a connecting transistor connected between a second node and the first node, a second photoelectric conversion unit configured to generate second charges in response to a second incident light, a second transfer transistor connected between a second photoelectric conversion unit and a third node, a switch transistor connected between the third node and the second node, a source follower connected to the first node, a selection transistor connected to the source follower, an overflow transistor connecting the first photoelectric conversion unit and a power supply voltage, and a comparator configured to turn on the overflow transistor.

公开(公告)号：US20240136374A1

公开(公告)日：2024-04-25

申请号：US18315982

申请日：2023-05-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Wook LIM

IPC: H01L27/146

CPC classification number: H01L27/14612 ,  H01L27/14603 ,  H01L27/1463 ,  H01L27/14636

Abstract: An image sensor comprises a first sub-pixel comprising a first photoelectric conversion region, a first floating diffusion region, and a first transfer transistor to transfer charges accumulated in the first photoelectric conversion region to the first floating diffusion region; and a second sub-pixel adjacent to the first sub-pixel, and comprising a second photoelectric conversion region, a second floating diffusion region, and a second transfer transistor to transfer charges accumulated in the second photoelectric conversion region to the second floating diffusion region. The first photoelectric conversion region may comprise a first and a second sub-region partitioned by a potential level isolation region that blocks movement of charges, and the first transfer transistor may comprise a first sub-transfer transistor to transfer charges accumulated in the first sub-region to the first floating diffusion region, and a second sub-transfer transistor to transfer charges accumulated in the second sub-region to the first floating diffusion region.

公开(公告)号：US20230194682A1

公开(公告)日：2023-06-22

申请号：US18065841

申请日：2022-12-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Wook LIM

IPC: G01S7/486 ,  G01S17/894 ,  G01S7/4863

CPC classification number: G01S7/4868 ,  G01S17/894 ,  G01S7/4863

Abstract: A distance measuring sensor of an image sensor includes a light emitter configured to output a first optical signal, a pixel array configured to receive a second optical signal caused by reflection of the first optical signal from an object, processing circuitry configured to calculate a distance between the light emitter and the object based on an output of the pixel array, and a variable voltage source, and the processing circuitry is further configured to, control the variable voltage source to apply a first voltage to a first node in response to the calculated distance between the light emitter and the object being larger than a first threshold distance, and control the variable voltage source to apply no voltage to the first node in response to the calculated distance between the light emitter and the object being smaller than the first threshold distance.