公开(公告)号：US20210066149A1

公开(公告)日：2021-03-04

申请号：US16866594

申请日：2020-05-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Ho PARK ,  Jin-Woo PARK ,  Jae Gwon JANG ,  Gwang Jae JEON

IPC: H01L23/31 ,  H01L21/56 ,  H01L23/00

Abstract: Methods of fabricating a semiconductor package may include forming a first barrier layer on a first carrier, forming a sacrificial layer, including an opening that exposes at least a portion of the first barrier layer, on the first barrier layer, and forming a second barrier layer on the first barrier layer and on the sacrificial layer. The second barrier layer may include a portion formed on the sacrificial layer. The methods may also include forming a first insulating layer in the opening and protruding beyond a top surface of the portion of the second barrier layer on the sacrificial layer, a top surface of the first insulating layer being farther from the first barrier layer than the top surface of the portion of the second barrier layer, forming a redistribution structure including a redistribution layer and a second insulating layer on the first insulating layer and on the second barrier layer, mounting a semiconductor chip on the redistribution structure, attaching a second carrier onto the semiconductor chip and removing the first carrier, removing the first barrier layer, the sacrificial layer, and the second barrier layer to expose portions of the redistribution structure, and forming solder balls, respectively, on the portions of the redistribution structure.

公开(公告)号：US20150373177A1

公开(公告)日：2015-12-24

申请号：US14842515

申请日：2015-09-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Kyu PARK ,  Seung-Yup LEE ,  Jung-Ho PARK ,  Soo-Ho SONG

IPC: H04M1/725 ,  H04M1/60 ,  H04W4/00

CPC classification number: H04M1/7253 ,  H04M1/6016 ,  H04M1/6058 ,  H04M1/6066 ,  H04M1/725 ,  H04W4/80

Abstract: An electronic device and method are provided. The electronic device includes a built-in microphone; a Bluetooth communication module configured to wirelessly connect to a first wireless external device including a speaker and a second wireless external device including a speaker; and a controller configured to detect a call establishment, if the call establishment is detected while one of the first and second wireless external devices is connected to the electronic device, operate the built-in microphone to receive sound based on information regarding the connected one of the first and second wireless external devices, and if the call establishment is detected while both of the first and second wireless external devices are connected to the electronic device, provide an incoming call audio signal received via the call establishment to one of the first and second wireless external devices.

Abstract translation: 提供了一种电子设备和方法。 电子设备包括内置麦克风; 蓝牙通信模块，被配置为无线地连接到包括扬声器的第一无线外部设备和包括扬声器的第二无线外部设备; 以及控制器，被配置为检测呼叫建立，如果在所述第一和第二无线外部设备中的一个连接到所述电子设备的同时检测到所述呼叫建立，则基于关于所连接的所述第二和第二无线外部设备的信息来操作所述内置麦克风以接收声音 第一和第二无线外部设备，并且如果在第一和第二无线外部设备都连接到电子设备的同时检测到呼叫建立，则将经由呼叫建立接收的呼入音频信号提供给第一和第二无线外部设备之一 无线外部设备。

公开(公告)号：US20150255495A1

公开(公告)日：2015-09-10

申请号：US14579311

申请日：2014-12-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Ho PARK

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14654 ,  H01L27/14689 ,  H01L2224/11

Abstract: Image sensor and method of manufacturing the same are provided. The image sensor includes a semiconductor substrate including a pixel area, a voltage connection area, and a pad area, a plurality of photoelectric conversion devices in the pixel area, an anti-reflective layer on a back side of the semiconductor substrate and on the plurality of photoelectric conversion devices, a device isolation structure between the plurality of photoelectric conversion devices, at least one voltage connection structure in the voltage connection area, and electrically connected to the device isolation structure, at least one voltage applying device electrically connected to the at least one voltage connection structure, an internal circuit including at least one conductive inner wire and at least one conductive inner via in an insulating layer, and a through via structure in the pad area.

Abstract translation: 提供了图像传感器及其制造方法。 图像传感器包括：半导体衬底，包括像素区域，电压连接区域和焊盘区域，像素区域中的多个光电转换器件，半导体衬底的背侧上的抗反射层以及多个 的光电转换装置，多个光电转换装置之间的器件隔离结构，电压连接区域中的至少一个电压连接结构，并且电连接到器件隔离结构，至少一个电压施加装置电连接到至少 一个电压连接结构，包括绝缘层中的至少一个导电内部导线和至少一个导电内部通孔的内部电路，以及所述焊盘区域中的通孔结构。

公开(公告)号：US20220077041A1

公开(公告)日：2022-03-10

申请号：US17405603

申请日：2021-08-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gwangjae JEON ,  Jung-Ho PARK ,  Seokhyun LEE ,  Yaejung YOON

IPC: H01L23/498 ,  H01L23/00 ,  H01L23/31

Abstract: Disclosed are semiconductor packages and methods of fabricating the same. The semiconductor package comprises a first redistribution substrate and a first semiconductor device on the first redistribution substrate. The first redistribution substrate includes a first dielectric layer that includes a first hole, an under-bump that includes a first bump part in the first hole and a second bump part that protrudes from the first bump part onto the first dielectric layer, an external connection terminal on a bottom surface of the first dielectric layer and connected to the under-bump through the first hole, a wetting layer between the external connection terminal and the under-bump, and a first barrier/seed layer between the under-bump and the first dielectric layer and between the under-bump and the wetting layer.

公开(公告)号：US20210257223A1

公开(公告)日：2021-08-19

申请号：US17037003

申请日：2020-09-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Ho PARK ,  Jin-Woo PARK ,  Seok Hyun LEE ,  Jae Gwon JANG ,  Gwang Jae JEON

IPC: H01L21/48 ,  H01L21/52 ,  H01L23/498 ,  H01L21/56 ,  H01L25/00

Abstract: A method for fabricating a semiconductor package, the method including: forming a release layer on a first carrier substrate, wherein the release layer includes a first portion and a second portion, wherein the first portion has a first thickness, and the second portion has a second thickness thicker than the first thickness; forming a barrier layer on the release layer; forming a redistribution layer on the barrier layer, wherein the redistribution layer includes wirings and an insulating layer; mounting a semiconductor chip on the redistribution layer; forming a molding layer on the redistribution layer to at least partially surround the semiconductor chip; attaching a second carrier substrate onto the molding layer; removing the first carrier substrate and the release layer; removing the barrier layer; and attaching a solder ball onto the redistribution layer exposed by removal of the barrier layer and the second portion of the release layer.

公开(公告)号：US20210057317A1

公开(公告)日：2021-02-25

申请号：US16819318

申请日：2020-03-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Ho PARK ,  Da Hye KIM ,  Jin-Woo PARK ,  Jae Gwon JANG

IPC: H01L23/498 ,  H01L23/31

Abstract: A semiconductor package having a redistribution structure including a first face and a second face and a first semiconductor chip mounted on the first face. The semiconductor package may further include a first redistribution pad exposed from the second face of the redistribution structure and a second redistribution pad exposed from the second face of the redistribution structure. The semiconductor package may further include a first solder ball being in contact with the first redistribution pad and a second solder ball being in contact with the second redistribution pad. In some embodiments, a first distance of the first redistribution pad is smaller than a second distance of the second redistribution pad, the first and second distances are measured with respect to a reference plane that intersects a lower portion of the first solder ball and a lower portion of the second solder ball.

公开(公告)号：US20150109175A1

公开(公告)日：2015-04-23

申请号：US14582714

申请日：2014-12-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-U KIM ,  Austin KIM ,  Dong-Hwan KIM ,  Jae-Ho LEE ,  Jung-Ho PARK

IPC: H01Q5/364

CPC classification number: H01Q5/364 ,  H01Q1/243 ,  H01Q9/0421 ,  H01Q9/0442

Abstract: A re-reconfigurable built-in antenna of a portable terminal is provided. The antenna includes an antenna radiator having a feeding pad electrically connected to a feeding portion of a main board of the terminal and at least one ground pad disposed in a position different from that of the feeding pad for selectively establishing an electrical connection to a ground portion of the terminal, and a switching element, commonly connected to the at least one ground pad of the antenna radiator, for selectively establishing an electrical connection to the ground portion by a switching operation. The antenna radiator changes a shape of the antenna radiator by using the selective electrical connection of the ground portion so as to have various operational frequency bands and radiation properties.

Abstract translation: 提供便携式终端的可重新配置的内置天线。 天线包括天线辐射器，其具有电连接到端子的主板的馈电部分的馈电焊盘和布置在与馈电焊盘不同的位置的至少一个接地焊盘，用于选择性地建立到接地部分的电连接 以及通常连接到天线辐射器的至少一个接地焊盘的开关元件，用于通过开关操作选择性地建立到接地部分的电连接。 天线辐射体通过使用接地部分的选择性电连接来改变天线辐射体的形状，从而具有各种工作频带和辐射特性。

公开(公告)号：US20220352050A1

公开(公告)日：2022-11-03

申请号：US17866866

申请日：2022-07-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong Kyu KIM ,  Jung-Ho PARK ,  Jong Youn KIM ,  Yeon Ho JANG ,  Jae Gwon JANG

IPC: H01L23/367 ,  H01L23/00 ,  H01L25/065 ,  H01L25/18 ,  H01L21/48 ,  H01L21/78 ,  H01L25/00 ,  H01L21/683

Abstract: A semiconductor package includes a first semiconductor chip and a second semiconductor chip on a substrate, a barrier layer on the first semiconductor chip and the second semiconductor chip, the barrier layer having an opening through which at least a part of the first semiconductor chip is exposed, and a heat transfer part on the barrier layer, the heat transfer part extending along an upper face of the barrier layer and filling the opening.

公开(公告)号：US20220262696A1

公开(公告)日：2022-08-18

申请号：US17735471

申请日：2022-05-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Ho PARK ,  Jin-Woo PARK ,  Jae Gwon JANG ,  Gwang Jae JEON

IPC: H01L23/31 ,  H01L23/00 ,  H01L21/56

Abstract: Methods of fabricating a semiconductor package may include forming a first barrier layer on a first carrier, forming a sacrificial layer, including an opening that exposes at least a portion of the first barrier layer, on the first barrier layer, and forming a second barrier layer on the first barrier layer and on the sacrificial layer. The second barrier layer may include a portion formed on the sacrificial layer. The methods may also include forming a first insulating layer in the opening and protruding beyond a top surface of the portion of the second barrier layer on the sacrificial layer, a top surface of the first insulating layer being farther from the first barrier layer than the top surface of the portion of the second barrier layer, forming a redistribution structure including a redistribution layer and a second insulating layer on the first insulating layer and on the second barrier layer, mounting a semiconductor chip on the redistribution structure, attaching a second carrier onto the semiconductor chip and removing the first carrier, removing the first barrier layer, the sacrificial layer, and the second barrier layer to expose portions of the redistribution structure, and forming solder balls, respectively, on the portions of the redistribution structure.

公开(公告)号：US20210050298A1

公开(公告)日：2021-02-18

申请号：US16874284

申请日：2020-05-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Da Hye KIM ,  Dong Kyu KIM ,  Jung-Ho PARK

IPC: H01L23/538 ,  H01L23/31 ,  H01L23/00 ,  H01L25/16 ,  H01L25/00 ,  H01L21/683 ,  H01L21/48 ,  H01L21/56

Abstract: A method for fabricating a semiconductor package includes forming a release layer on a first carrier substrate. An etch stop layer is formed on the release layer. A first redistribution layer is formed on the etch stop layer and includes a plurality of first wires and a first insulation layer surrounding the plurality of first wires. A first semiconductor chip is formed on the first redistribution layer. A solder ball is formed between the first redistribution layer and the first semiconductor chip. A second carrier substrate is formed on the first semiconductor chip. The first carrier substrate, the release layer, and the etch stop layer are removed. The second carrier substrate is removed.