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公开(公告)号：US20180033826A1
公开(公告)日：2018-02-01
申请号：US15446024
申请日：2017-03-01
Applicant: Samsung Electronics Co., Ltd.
Inventor： Seol Choi , Hideki Horii , Dong-ho Ahn , Seong-geon Park , Dong-jun Seong , Min-kyu Yang , Jung-moo Lee
CPC classification number: H01L27/2427 , G11C13/0004 , G11C13/0026 , G11C13/0028 , G11C13/003 , G11C2213/52 , G11C2213/71 , G11C2213/72 , G11C2213/73 , G11C2213/76 , H01L27/2463 , H01L27/2481 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/1253 , H01L45/126 , H01L45/143 , H01L45/144 , H01L45/1675
Abstract: A variable resistance memory device may include: a first electrode layer; a selection device layer on the first electrode layer, the selection device layer including a chalcogenide switching material consisting essentially of germanium (Ge), selenium (Se), and antimony (Sb), wherein a content of the Ge is less than a content of the Se based on an atomic weight; a second electrode layer on the selection device layer; a variable resistance layer on the second electrode layer, the variable resistance layer including a chalcogenide material; and a third electrode layer on the variable resistance layer.
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公开(公告)号：US10186552B2
公开(公告)日：2019-01-22
申请号：US15446024
申请日：2017-03-01
Applicant: Samsung Electronics Co., Ltd.
Inventor： Seol Choi , Hideki Horii , Dong-ho Ahn , Seong-geon Park , Dong-jun Seong , Min-kyu Yang , Jung-moo Lee
Abstract: A variable resistance memory device may include: a first electrode layer; a selection device layer on the first electrode layer, the selection device layer including a chalcogenide switching material consisting essentially of germanium (Ge), selenium (Se), and antimony (Sb), wherein a content of the Ge is less than a content of the Se based on an atomic weight; a second electrode layer on the selection device layer; a variable resistance layer on the second electrode layer, the variable resistance layer including a chalcogenide material; and a third electrode layer on the variable resistance layer.
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