公开(公告)号：US20170219538A1

公开(公告)日：2017-08-03

申请号：US15393731

申请日：2016-12-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kihyun Kim ,  Sooyeon Kim ,  JungDae Park ,  Min Soo Suh ,  Hyang Bong Lee ,  Kwangshin Lim

IPC: G01N30/06 ,  G01N30/16 ,  C01C1/28

CPC classification number: G01N30/06 ,  C01C1/28 ,  G01N2030/067 ,  G01N2030/8872

Abstract: Provided is a method for detecting impurities in ammonium hydroxide. The method for detecting impurities in ammonium hydroxide includes preparing a potassium permanganate solution, preparing ammonium hydroxide, and adding the potassium permanganate solution several times to the ammonium hydroxide so as to detect impurities in the ammonium hydroxide. Potassium permanganate contained in the potassium permanganate solution is added for each time in the range of 0.0001 mol to 0.01 mol per 1 g of ammonia contained in the ammonium hydroxide.

公开(公告)号：US10431506B2

公开(公告)日：2019-10-01

申请号：US15848896

申请日：2017-12-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dusik Bae ,  Yoonmi Lee ,  Hyeogki Kim ,  Kyoungsil Park ,  JungDae Park

IPC: H01L21/66 ,  H01L21/311 ,  G01N21/65 ,  H01L21/67 ,  H01L21/033 ,  G01N21/956

Abstract: Disclosed are a method of processing a substrate and a method of fabricating a semiconductor device using the same. The method of processing a substrate comprises forming a mask layer on a substrate, inspecting the mask layer, and forming a mask pattern based on an inspection result of the mask layer. The operation of inspecting the mask layer comprises using Raman spectrum analysis to detect defects in the mask layer.

公开(公告)号：US10309937B2

公开(公告)日：2019-06-04

申请号：US15393731

申请日：2016-12-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kihyun Kim ,  Sooyeon Kim ,  JungDae Park ,  Min Soo Suh ,  Hyang Bong Lee ,  Kwangshin Lim

IPC: G01N30/06 ,  G01N30/16 ,  C01C1/28 ,  G01N30/88

Abstract: Provided is a method for detecting impurities in ammonium hydroxide. The method for detecting impurities in ammonium hydroxide includes preparing a potassium permanganate solution, preparing ammonium hydroxide, and adding the potassium permanganate solution several times to the ammonium hydroxide so as to detect impurities in the ammonium hydroxide. Potassium permanganate contained in the potassium permanganate solution is added for each time in the range of 0.0001 mol to 0.01 mol per 1 g of ammonia contained in the ammonium hydroxide.

公开(公告)号：US20180204777A1

公开(公告)日：2018-07-19

申请号：US15848896

申请日：2017-12-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dusik BAE ,  Yoonmi Lee ,  Hyeogki Kim ,  Kyoungsil Park ,  JungDae Park

IPC: H01L21/66 ,  H01L21/67 ,  H01L21/311 ,  G01N21/65

CPC classification number: H01L22/12 ,  G01N21/65 ,  G01N21/9501 ,  G01N2021/8427 ,  G01N2021/95676 ,  H01L21/0334 ,  H01L21/31116 ,  H01L21/67069 ,  H01L22/20 ,  H01L22/24 ,  H01L22/26

Abstract: Disclosed are a method of processing a substrate and a method of fabricating a semiconductor device using the same. The method of processing a substrate comprises forming a mask layer on a substrate, inspecting the mask layer, and forming a mask pattern based on an inspection result of the mask layer. The operation of inspecting the mask layer comprises using Raman spectrum analysis to detect defects in the mask layer.