公开(公告)号：US20240288785A1

公开(公告)日：2024-08-29

申请号：US18585900

申请日：2024-02-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jungah KIM ,  Jimin CHUN ,  Hyojoong YOON ,  Yonghwan CHO ,  Junyoul CHOI ,  Sangwon BAE

IPC: G03F7/00 ,  C11D7/08 ,  C11D7/10 ,  C11D7/26 ,  G03F1/22

CPC classification number: G03F7/70925 ,  C11D7/08 ,  C11D7/105 ,  C11D7/265 ,  G03F1/22 ,  G03F7/70033

Abstract: Described is a cleaning composition including an inorganic acid or salt thereof and an organic acid, wherein the organic acid has a first acid dissociation constant (PKa1) and a second acid dissociation constant (PKa2). PKa1 is less than PKa2, and PKa1 is from about 1 to about 3, and PKa2 is from about 4 to about 7.

公开(公告)号：US20230037563A1

公开(公告)日：2023-02-09

申请号：US17858924

申请日：2022-07-06

Applicant: SAMSUNG SDI CO., LTD. ,  SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ryunmin HEO ,  Hyungrang MOON ,  Minyoung LEE ,  Minsoo KIM ,  Youngkwon KIM ,  Jaehyun KIM ,  Changsoo WOO ,  Jung Min CHOI ,  Moohyun KOH ,  Jungah KIM ,  Sungan DO ,  Sang Won BAE ,  Hoon HAN ,  SukKoo HONG

IPC: G03F7/32

Abstract: A metal-containing photoresist developer composition, and a method of forming patterns including a step of developing using the same are provided. The metal-containing photoresist developer composition includes an organic solvent, and a heptagonal ring compound substituted with at least one hydroxy group (—OH). The heptagonal ring compound has at least two double bonds in the ring.

公开(公告)号：US20230038110A1

公开(公告)日：2023-02-09

申请号：US17858921

申请日：2022-07-06

Applicant: SAMSUNG SDI CO., LTD. ,  SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minyoung LEE ,  Hyungrang MOON ,  Ryunmin HEO ,  Minsoo KIM ,  Youngkwon KIM ,  Jaehyun KIM ,  Changsoo WOO ,  Jung Min CHOI ,  Moohyun KOH ,  Jungah KIM ,  Sungan DO ,  Sang Won BAE ,  Hoon HAN ,  SukKoo HONG

IPC: G03F7/16 ,  G03F7/11

Abstract: A composition for removing edge beads from a metal-containing resist, and a method of forming patterns including step of removing edge beads using the same are provided. The composition for removing edge beads from a metal-containing resist includes an organic solvent, and a heptagonal ring compound substituted with at least one hydroxyl group (—OH). The heptagonal ring compound has at least two double bonds in the ring.

公开(公告)号：US20210254224A1

公开(公告)日：2021-08-19

申请号：US17313534

申请日：2021-05-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jungah KIM ,  Mihyun PARK ,  Jinwoo LEE ,  Keonyoung KIM ,  Hyosan LEE ,  Hoon HAN ,  Jin Uk LEE ,  Jung Hun LIM

IPC: C23F1/26 ,  C23F1/30 ,  H01L21/311 ,  H01L21/306

Abstract: A method of etching a metal barrier layer and a metal layer is provided. The method includes forming the metal barrier layer and the metal layer on a substrate, and using an etching composition to etch the metal barrier layer and the metal layer. The etching composition may include an oxidant selected from nitric acid, bromic acid, iodic acid, perchloric acid, perbromic acid, periodic acid, sulfuric acid, methane sulfonic acid, p-toluenesulfonic acid, benzenesulfonic acid, or a combination thereof, a metal etching inhibitor including a compound expressed by Chemical Formula 1, and a metal oxide solubilizer selected from phosphoric acid, phosphate, carboxylic acid having 3 to 20 carbon atoms, or a combination thereof.

公开(公告)号：US20200087798A1

公开(公告)日：2020-03-19

申请号：US16574372

申请日：2019-09-18

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  SOULBRAIN CO., LTD.

Inventor： Jungah KIM ,  Mihyun PARK ,  Jinwoo LEE ,  Keonyoung KIM ,  Hyosan LEE ,  Hoon HAN ,  Jin Uk LEE ,  Jung Hun LIM

IPC: C23F1/26 ,  H01L21/306 ,  H01L21/311 ,  C23F1/30

Abstract: Disclosed is a method of etching a metal barrier layer and a metal layer. The method includes forming the metal barrier layer and the metal layer on a substrate, and using an etching composition to etch the metal barrier layer and the metal layer. The etching composition may include an oxidant selected from nitric acid, bromic acid, iodic acid, perchloric acid, perbromic acid, periodic acid, sulfuric acid, methane sulfonic acid, p-toluenesulfonic acid, benzenesulfonic acid, or a combination thereof, a metal etching inhibitor including a compound expressed by Chemical Formula 1, and a metal oxide solubilizer selected from phosphoric acid, phosphate, carboxylic acid having 3 to 20 carbon atoms, or a combination thereof.