公开(公告)号：US20240309298A1

公开(公告)日：2024-09-19

申请号：US18413777

申请日：2024-01-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minhyung CHO ,  Minju IM ,  Hyojoong YOON ,  Mihyun PARK ,  Jinhye BAE ,  Taekyung LEE ,  Sangwon BAE

IPC: C11D3/20 ,  C11D3/30 ,  C11D3/39 ,  G03F7/42 ,  H01L21/02

CPC classification number: C11D3/201 ,  C11D3/2017 ,  C11D3/2068 ,  C11D3/30 ,  C11D3/3927 ,  G03F7/425 ,  H01L21/02071 ,  C11D2111/22

Abstract: A stripper composition may include a polar organic solvent, a pH-adjusting agent, and an ammonium salt or a diamine compound, and deionized water (DIW). In the diamine compound, a main chain between amines may have 4 or fewer carbon atoms.

公开(公告)号：US20240059967A1

公开(公告)日：2024-02-22

申请号：US18227454

申请日：2023-07-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Daihyun KIM ,  Taesoo KWON ,  Yeonsoek YOO ,  Mihyun PARK ,  Sangwon BAE ,  Hyosan LEE ,  Wook JANG

IPC: C09K13/06 ,  H01L29/66

CPC classification number: C09K13/06 ,  H01L29/66795

Abstract: An etching composition for etching a titanium aluminum nitride layer and a method of manufacturing an integrated circuit, the etching composition includes about 15 wt % to about 30 wt % of an oxidizing agent; about 1 wt % to about 10 wt % of a pH adjusting agent, the pH adjusting agent including an inorganic acid or an organic acid; about 0.001 wt % to about 1 wt % of an etching booster; and a solvent, all wt % being based on a total weight of the etching composition.

公开(公告)号：US20130183824A1

公开(公告)日：2013-07-18

申请号：US13733506

申请日：2013-01-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byoungho KWON ,  Kuntack LEE ,  Yongsun KO ,  Hongjin KIM ,  Sangwon BAE ,  Sigyung AHN ,  Jun-Youl YANG ,  Sol HAN ,  Bo yun KIM ,  Myung-Ki HONG

IPC: H01L21/768

CPC classification number: H01L21/76841 ,  H01L21/02074 ,  H01L21/76861

Abstract: A method of fabricating a semiconductor device includes forming a first layer including a first metal, forming a second layer including a second metal, the second layer being adjacent to the first layer, polishing top surfaces of the first and second layers, and cleaning the first and second layers using a cleaning solution. The cleaning solution may include an etching solution etching the first and second layers and an inhibitor suppressing the second layer from being over etched.

Abstract translation: 制造半导体器件的方法包括形成包括第一金属的第一层，形成包括第二金属的第二层，第二层邻近第一层，抛光第一层和第二层的顶表面，以及清洁第一层 和使用清洁溶液的第二层。 清洁溶液可以包括蚀刻溶液，蚀刻第一和第二层以及抑制第二层的抑制剂被过蚀刻。

公开(公告)号：US20240288785A1

公开(公告)日：2024-08-29

申请号：US18585900

申请日：2024-02-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jungah KIM ,  Jimin CHUN ,  Hyojoong YOON ,  Yonghwan CHO ,  Junyoul CHOI ,  Sangwon BAE

IPC: G03F7/00 ,  C11D7/08 ,  C11D7/10 ,  C11D7/26 ,  G03F1/22

CPC classification number: G03F7/70925 ,  C11D7/08 ,  C11D7/105 ,  C11D7/265 ,  G03F1/22 ,  G03F7/70033

Abstract: Described is a cleaning composition including an inorganic acid or salt thereof and an organic acid, wherein the organic acid has a first acid dissociation constant (PKa1) and a second acid dissociation constant (PKa2). PKa1 is less than PKa2, and PKa1 is from about 1 to about 3, and PKa2 is from about 4 to about 7.

公开(公告)号：US20230272280A1

公开(公告)日：2023-08-31

申请号：US18098847

申请日：2023-01-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changjun PARK ,  Jaesung LEE ,  Junghun LIM ,  Jungmin OH ,  Sangwon BAE ,  Hyosan LEE

IPC: C09K13/10 ,  H01L21/306 ,  H10B12/00 ,  C09K13/08

CPC classification number: C09K13/10 ,  C09K13/08 ,  H01L21/30604 ,  H10B12/05 ,  H10B12/30

Abstract: An etchant composition for etching a silicon germanium film includes, based on a total weight of the etchant composition, about 5 wt% to about 14 wt% of an oxidant, about 0.01 wt% to about 5 wt% of a fluorine compound, about 0.01 wt% to about 5 wt% of an amine compound, about 0.01 wt% to about 1 wt% of an alcohol compound having a hydrophilic head and a hydrophobic tail, about 60 wt% to about 90 wt% of an organic solvent, and a balance of water. A method of manufacturing an integrated circuit device includes: forming, on a substrate, a structure in which a plurality of silicon films and a plurality of silicon germanium films are alternately stacked; and selectively removing the plurality of silicon germanium films by using the etchant composition.

公开(公告)号：US20230272278A1

公开(公告)日：2023-08-31

申请号：US18081899

申请日：2022-12-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changjun PARK ,  Jaesung LEE ,  Junghun LIM ,  Mihyun PARK ,  Sangwon BAE ,  Jungmin OH ,  Hyosan LEE

IPC: C09K13/06 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/3205

CPC classification number: C09K13/06 ,  H01L21/32134 ,  H01L21/76883 ,  H01L21/32051

Abstract: An etching composition for etching a molybdenum film, the etching composition includes about 0.1 wt % to about 5 wt % of an oxidant; about 10 wt % to about 40 wt % of a chelate agent, the chelate agent including a mineral acid; about 0.01 wt % to about 3 wt % of a corrosion inhibitor, the corrosion inhibitor including an ammonium salt, an amine compound, or a combination thereof; and an organic solvent, all wt % being based on a total weight of the etching composition.