公开(公告)号：US12062395B2

公开(公告)日：2024-08-13

申请号：US17750642

申请日：2022-05-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yohan Lee ,  Chaehoon Kim ,  Jungyun Yun ,  Jiho Cho ,  Sanggi Hong

IPC: G11C16/14 ,  G11C16/04 ,  G11C16/08 ,  G11C16/30 ,  G11C11/56 ,  G11C16/34

CPC classification number: G11C16/14 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/30 ,  G11C11/5628 ,  G11C16/3445 ,  G11C16/3459

Abstract: A nonvolatile memory device includes a memory block and a control circuit. The memory block includes a plurality of cell strings where each of the plurality of cell strings includes a string selection transistor, a plurality of memory cells and a ground selection transistor which are connected in series and disposed in a vertical direction between a bit-line and a common source line. The control circuit adjusts a level of a high voltage applied to a gate of a pass transistor of a selected word-line such that a voltage difference between the high voltage and a program voltage applied to a drain of the pass transistor differs in at least a portion of a plurality of program loops based on a comparison of a number of the program loops and a reference number during a program operation on a target memory cells.