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公开(公告)号：US20220324887A1
公开(公告)日：2022-10-13
申请号：US17708323
申请日：2022-03-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Seungmin RYU , Younsoo KIM , Jaewoon KIM , Kazuki HARANO , Kazuya SAITO , Takanori KOIDE , Yutaro AOKI , Gyuhee PARK , Younjoung CHO , Wakana FUSE , Yoshiki MANABE , Hiroyuki UCHIUZOU , Masayuki KIMURA , Takahiro YOSHII
IPC: C07F9/00 , H01L49/02 , H01L27/108 , C23C16/34 , C23C16/455
Abstract: An organometallic adduct compound and a method of manufacturing an integrated circuit device, the organometallic adduct compound being represented by General Formula (I):
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2.发明申请公开(公告)号：US20190152996A1
公开(公告)日：2019-05-23
申请号：US16251236
申请日：2019-01-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Gyu-hee PARK , Youn-soo KIM , Jae-soon LIM , Youn-joung CHO , Kazuki HARANO , Haruyoshi SATO , Tsubasa SHIRATORI , Naoki YAMADA
Abstract: A lanthanum compound, a method of synthesizing a thin film, and a method of manufacturing an integrated circuit device, the compound being represented by Formula 1 below, wherein, in Formula 1, R1 is a hydrogen atom or a C1-C4 linear or branched alkyl group, R2 and R3 are each independently a hydrogen atom or a C1-C5 linear or branched alkyl group, at least one of R2 and R3 being a C3-C5 branched alkyl group, and R4 is a hydrogen atom or a C1-C4 linear or branched alkyl group.
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Patent Agency Ranking
公开(公告)号：US20250154648A1
公开(公告)日：2025-05-15
申请号：US18791776
申请日：2024-08-01
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyunwoo KIM , Daeun KIM , Akio SAITO , Tomoharu YOSHINO , Kazuki HARANO , Takashi HIGASHINO , Shotaro TAGUCHI , Yoshiki MANABE , Yu Jin PARK , Byung Seok LEE , Seung-min RYU , Gyu-Hee PARK , Younjoung CHO
IPC: C23C16/34 , C07F17/00 , C23C16/44 , C23C16/448 , C23C16/455
Abstract: Provided are a precursor for forming a metal thin film including a metal compound represented by Chemical Formula 1, a method for manufacturing a metal thin film using the same, and a metal thin film manufactured by the method.
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公开(公告)号：US20210388010A1
公开(公告)日：2021-12-16
申请号：US17346400
申请日：2021-06-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Seungmin RYU , Younsoo KIM , Gyuhee PARK , Younjoung CHO , Yutaro AOKI , Wakana FUSE , Kazuki HARANO , Takanori KOIDE , Yoshiki MANABE , Kazuya SAITO , Hiroyuki UCHIUZOU
IPC: C07F9/00 , H01L51/00 , C23C16/455 , C23C16/34
Abstract: An organometallic compound and a method of manufacturing an integrated circuit (IC) device, the organometallic compound being represented by Formula (I),
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公开(公告)号：US20240067663A1
公开(公告)日：2024-02-29
申请号：US18231339
申请日：2023-08-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hyunwoo KIM , Kazuki HARANO , Kiyoshi MURATA , Haruyoshi SATO , Seungmin RYU , Gyuhee PARK , Younjoung CHO , Atsushi YAMASHITA
IPC: C07F5/00 , C01F17/218 , H01L21/02
CPC classification number: C07F5/003 , C01F17/218 , H01L21/02192 , H01L21/02205 , H01L21/02271 , H01L21/0228 , C23C16/405
Abstract: An yttrium compound, a method of manufacturing an integrated circuit device, and a raw material for forming an yttrium-containing film, the yttrium compound being represented by the following General formula (1):
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公开(公告)号：US20230040334A1
公开(公告)日：2023-02-09
申请号：US17859214
申请日：2022-07-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hyunwoo KIM , Kazuki HARANO , Kiyoshi MURATA , Haruyoshi SATO , Younsoo KIM , Seungmin RYU , Atsushi YAMASHITA , Gyuhee PARK , Younjoung CHO
Abstract: An yttrium compound and a method of manufacturing an integrated circuit device, the compound being represented by General Formula (I):
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公开(公告)号：US20210300955A1
公开(公告)日：2021-09-30
申请号：US17072096
申请日：2020-10-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Gyuhee PARK , Younjoung CHO , Haruyoshi SATO , Kazuki HARANO , Hiroyuki UCHIUZOU
Abstract: A molybdenum compound and a method of manufacturing an integrated circuit device, the molybdenum compound being represented by the following General Formula (I):
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