公开(公告)号：US09524922B2

公开(公告)日：2016-12-20

申请号：US14665428

申请日：2015-03-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyounghwan Lim ,  Hyoun Soo Park ,  Kee Sup Kim ,  Bonghyun Lee ,  Chul Rim ,  JungYun Choi ,  Taewhan Kim ,  Heechun Park

IPC: H01L23/48 ,  H03K19/00 ,  H01L21/66 ,  H01L23/522

CPC classification number: H01L23/481 ,  H01L22/14 ,  H01L22/22 ,  H01L23/5226 ,  H01L25/0657 ,  H01L2924/0002 ,  H03K19/00 ,  H01L2924/00

Abstract: The integrated circuit includes first and second vias, a first buffer configured to receive a signal transmitted from the first via, a second buffer configured to receive a signal transmitted from the second via, a first detour circuit configured to receive a signal transmitted through the second buffer, a second detour circuit configured to receive a signal transmitted through the first buffer, a first selector configured to selectively output one of the signal transmitted from the first via and a signal transmitted through the first detour circuit, and a second selector configured to selectively output one of the signal transmitted from the second via and a signal transmitted through the second detour circuit. Each of the first and second buffers and the first and second detour circuits transmits a signal in only one direction.

Abstract translation: 集成电路包括第一和第二通孔，第一缓冲器被配置为接收从第一通路发送的信号，第二缓冲器，被配置为接收从第二通路发送的信号，第一迂回电路被配置为接收通过第二通孔传输的信号 缓冲器，被配置为接收通过第一缓冲器传输的信号的第二迂回电路，第一选择器，被配置为选择性地输出从第一通孔传输的信号和通过第一迂回电路传输的信号之一;以及第二选择器，其被配置为选择性地 输出从第二通路发送的信号中的一个信号和通过第二迂回电路发送的信号。 第一和第二缓冲器以及第一和第二绕路电路中的每一个仅在一个方向上传输信号。

公开(公告)号：US09459680B2

公开(公告)日：2016-10-04

申请号：US13948691

申请日：2013-07-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyungock Kim ,  Wook Kim ,  Jun Seomun ,  Chungki Oh ,  JaeHan Jeon ,  Kyungtae Do ,  JungYun Choi ,  Hyosig Won ,  Kee Sup Kim

IPC: G06F1/32 ,  G05D23/19 ,  G06F1/20

CPC classification number: G06F1/3206 ,  G05D23/1919 ,  G06F1/20 ,  G06F1/324 ,  Y02D10/126

Abstract: A temperature control method of a semiconductor device is provided. The temperature control method includes detecting a temperature of the semiconductor device; activating a reverse body biasing operation in which a body bias voltage applied to a function block of the semiconductor device is regulated, when the detected temperature is greater than a first temperature level; and activating a thermal throttling operation in which at least one of a frequency of a driving clock provided to a function block of the semiconductor device and a driving voltage applied to the function block of the semiconductor device is regulated, when the detected temperature is greater than a second temperature level that is different than the first temperature level.

Abstract translation: 提供了一种半导体器件的温度控制方法。 温度控制方法包括检测半导体器件的温度; 当检测到的温度大于第一温度水平时，激活施加到半导体器件的功能块的体偏置电压的反向体偏置操作; 以及激活热调节操作，其中当检测到的温度大于所述热节流操作时，提供给所述半导体器件的功能块的驱动时钟的频率中的至少一个和施加到所述半导体器件的功能块的驱动电压被调节 与第一温度水平不同的第二温度水平。