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公开(公告)号：US10712497B2
公开(公告)日：2020-07-14
申请号：US16182763
申请日：2018-11-07
Applicant: Samsung Electronics Co., Ltd.
Inventor： Ho Chul Ji , Kwan Sik Cho , Keun Yeong Cho
IPC: G02B6/12
Abstract: Photonic integrated circuit packages having improved integration, and methods of manufacturing such photonic integrated circuit packages, are provided. As an example, a photonic integrated circuit package may include a substrate, a first insulating layer on the substrate, a photonic core layer on the first insulating layer, and a second insulating layer on the photonic core layer. A photonic coupling device may be in the photonic core layer, and may be, as examples, at least one of a grating coupler or a photodetector. A concave mirror may extend into at least the second insulating layer. In some embodiments, the concave mirror may extend through the second insulating layer and into the first insulating layer.
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公开(公告)号：US11448836B2
公开(公告)日：2022-09-20
申请号：US16416727
申请日：2019-05-20
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Ho Chul Ji , Keun Yeong Cho
Abstract: A probe device includes an optical fiber array including an optical fiber to be in optical communication with an optical integrated circuit board, the optical integrated circuit board including an optical coupling element and a reflection mirror, a base substrate fixing the optical fiber, and an intermediate substrate including a hole into which the optical fiber is inserted, and a probe mirror to reflect an optical signal between the reflection mirror and the optical coupling element.
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公开(公告)号：US20210103094A1
公开(公告)日：2021-04-08
申请号：US17102978
申请日：2020-11-24
Applicant: Samsung Electronics Co., Ltd.
Inventor： Keun Yeong Cho , Hyunil Byun , Ho-Chul Ji
Abstract: A photonic integrated circuit device includes a semiconductor substrate (e.g., wafer) having a chip region therein, which is bounded on at least one side thereof by a scribe line. The chip region includes an optical transmitter, an optical receiver and a test optical waveguide. This test optical waveguide is coupled to the optical transmitter and the optical receiver and overlaps the scribe line. During a substrate dicing operation, a portion of the test optical waveguide overlapping the scribe line is removed.
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公开(公告)号：US11555959B2
公开(公告)日：2023-01-17
申请号：US17102978
申请日：2020-11-24
Applicant: Samsung Electronics Co., Ltd.
Inventor： Keun Yeong Cho , Hyunil Byun , Ho-Chul Ji
Abstract: A photonic integrated circuit device includes a semiconductor substrate (e.g., wafer) having a chip region therein, which is bounded on at least one side thereof by a scribe line. The chip region includes an optical transmitter, an optical receiver and a test optical waveguide. This test optical waveguide is coupled to the optical transmitter and the optical receiver and overlaps the scribe line. During a substrate dicing operation, a portion of the test optical waveguide overlapping the scribe line is removed.
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公开(公告)号：US10705302B2
公开(公告)日：2020-07-07
申请号：US16211712
申请日：2018-12-06
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Ho Chul Ji , Keun Yeong Cho
Abstract: A photonic integrated circuit package includes a first substrate including a first mirror and an optical coupling device spaced apart from each other, and a second substrate on an upper portion of the first substrate, the second substrate including an electro-optical converter and a second mirror, the electro-optical converter to output an optical signal to the first mirror, and the second mirror to reflect an optical signal reflected by and received from the first mirror to the optical coupling device.
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Patent Agency Ranking
公开(公告)号：US20240405037A1
公开(公告)日：2024-12-05
申请号：US18407163
申请日：2024-01-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Gyunha Park , Jonghyun Go , Ji-Youn Song , Keun Yeong Cho
IPC: H01L27/146
Abstract: The present disclosure relates to image sensors. An example image sensor includes a first substrate, a transmission transistor, a second substrate, multiple transistors, multiple wires, and a deep node. The first substrate includes a first side, a second side facing the first side, and a photoelectric conversion area. The transmission transistor is disposed on the first side of the first substrate. The second substrate includes a first side and a second side facing each other. The transistors are disposed on the first side of the second substrate and connected with the transmission transistor. The wires are disposed on the second side of the second substrate. The deep node penetrates the second substrate. The first side of the first substrate and the first side of the second substrate face each other. The transistors and one or more wires are connected through the deep node.
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公开(公告)号：US20190265408A1
公开(公告)日：2019-08-29
申请号：US16182763
申请日：2018-11-07
Applicant: Samsung Electronics Co., Ltd.
Inventor： Ho Chul Ji , Kwan Sik Cho , Keun Yeong Cho
IPC: G02B6/12
Abstract: Photonic integrated circuit packages having improved integration, and methods of manufacturing such photonic integrated circuit packages, are provided. As an example, a photonic integrated circuit package may include a substrate, a first insulating layer on the substrate, a photonic core layer on the first insulating layer, and a second insulating layer on the photonic core layer. A photonic coupling device may be in the photonic core layer, and may be, as examples, at least one of a grating coupler or a photodetector. A concave mirror may extend into at least the second insulating layer. In some embodiments, the concave mirror may extend through the second insulating layer and into the first insulating layer.
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公开(公告)号：US11428877B2
公开(公告)日：2022-08-30
申请号：US17037864
申请日：2020-09-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Keun Yeong Cho , Ho-Chul Ji
IPC: G02B6/42 , H01L31/0232 , G02B6/12 , H01L31/0216
Abstract: A photodetector structure includes a substrate including a semiconductor film, a light absorption layer which is in contact with the semiconductor film and includes germanium (Ge), on the substrate, a first coating layer which wraps at least a part of a side surface of the light absorption layer, on the substrate, and an optical waveguide which is in contact with the light absorption layer and includes silicon nitride (SiN), on the first coating layer, wherein a lower surface of the optical waveguide is higher than a lower surface of the light absorption layer.
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公开(公告)号：US10830968B2
公开(公告)日：2020-11-10
申请号：US16211344
申请日：2018-12-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Keun Yeong Cho , Ho-Chul Ji
IPC: G02B6/42 , H01L31/0232 , G02B6/12 , H01L31/0216
Abstract: A photodetector structure includes a substrate including a semiconductor film, a light absorption layer which is in contact with the semiconductor film and includes germanium (Ge), on the substrate, a first coating layer which wraps at least a part of a side surface of the light absorption layer, on the substrate, and an optical waveguide which is in contact with the light absorption layer and includes silicon nitride (SiN), on the first coating layer, wherein a lower surface of the optical waveguide is higher than a lower surface of the light absorption layer.
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公开(公告)号：US10374699B2
公开(公告)日：2019-08-06
申请号：US15889449
申请日：2018-02-06
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Ho-Chul Ji , Keun Yeong Cho
IPC: H04Q11/00 , H04B10/032
Abstract: A photonic integrated circuit includes a main light source, a redundant light source, a controller, an optical switch, and a modulator. The main light source outputs main light through a main light input waveguide. The redundant light source outputs redundant light through a redundant light transmission waveguide. The controller generates a first switch signal based on a fault state of the main light source. The optical switch selectively provides the redundant light from the redundant light transmission waveguide to a redundant light input waveguide based on the first switch signal. The modulator modulates main light from the main light input waveguide or redundant light from the redundant light input waveguide and outputs a first optical signal.
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