公开(公告)号：US09018618B1

公开(公告)日：2015-04-28

申请号：US14526274

申请日：2014-10-28

申请人： Samsung Electronics Co., Ltd.

发明人： Jong Hyun Lee ,  Ki Ho Park ,  Suk Ho Yoon ,  Sang Heon Han ,  Jae Sung Hyun

IPC分类号： H01L29/06 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32

CPC分类号： H01L33/06 ,  H01L33/32 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49107 ,  H01L2224/8592 ,  H01S5/0224 ,  H01S5/042 ,  H01S5/3408 ,  H01S5/34333 ,  H01L2924/00014

摘要： There is provided a semiconductor light emitting device including: an n-type semiconductor layer; a p-type semiconductor layer; and an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer, and including a plurality of alternately stacked quantum barrier layers and quantum well layers, wherein at least a portion of the plurality of quantum well layers has different thicknesses, wherein a thickness of a first quantum well layer most adjacent to the p-type semiconductor layer is less than a thickness of a second quantum well layer adjacent thereto and greater than a thickness of a third quantum well layer, other than the first and second quantum well layers.

摘要翻译： 提供一种半导体发光器件，包括：n型半导体层; p型半导体层; 以及设置在n型半导体层和p型半导体层之间的有源层，并且包括多个交替层叠的量子势垒层和量子阱层，其中所述多个量子阱层的至少一部分具有不同的厚度 其中与p型半导体层最相邻的第一量子阱层的厚度小于与其相邻的第二量子阱层的厚度，并且大于第三量子阱层的厚度，除了第一和第二 量子阱层。

公开(公告)号：US08846429B2

公开(公告)日：2014-09-30

申请号：US13846905

申请日：2013-03-18

申请人： Samsung Electronics Co., Ltd.

发明人： Ki Ho Park ,  Ki Sung Kim ,  Chul Min Kim ,  Suk Ho Yoon ,  Tae Hyun Lee

IPC分类号： H01L21/00 ,  H01L21/30 ,  H01L21/46 ,  H01L33/00

CPC分类号： H01L33/0079

摘要： A method for manufacturing a semiconductor light emitting device is provided. The method includes forming a light emitting structure by sequentially growing a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a semiconductor growth substrate A support unit is disposed on the second conductivity-type semiconductor layer, so as to be combined with the light emitting structure. The semiconductor growth substrate is separated from the light emitting structure. An interface between the semiconductor growth substrate and a remaining light emitting structure is wet-etched such that the light emitting structure remaining on the separated semiconductor growth substrate is separated therefrom. The semiconductor growth substrate is cleaned.

摘要翻译： 提供一种制造半导体发光器件的方法。 该方法包括通过在半导体生长衬底上顺序生长第一导电类型半导体层，有源层和第二导电类型半导体层来形成发光结构。支撑单元设置在第二导电型半导体层上， 以便与发光结构组合。 半导体生长衬底与发光结构分离。 湿式蚀刻半导体生长衬底和剩余的发光结构之间的界面，使得保留在分离的半导体生长衬底上的发光结构与其分离。 清洁半导体生长衬底。