公开(公告)号：US09018618B1

公开(公告)日：2015-04-28

申请号：US14526274

申请日：2014-10-28

申请人： Samsung Electronics Co., Ltd.

发明人： Jong Hyun Lee ,  Ki Ho Park ,  Suk Ho Yoon ,  Sang Heon Han ,  Jae Sung Hyun

IPC分类号： H01L29/06 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32

CPC分类号： H01L33/06 ,  H01L33/32 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49107 ,  H01L2224/8592 ,  H01S5/0224 ,  H01S5/042 ,  H01S5/3408 ,  H01S5/34333 ,  H01L2924/00014

摘要： There is provided a semiconductor light emitting device including: an n-type semiconductor layer; a p-type semiconductor layer; and an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer, and including a plurality of alternately stacked quantum barrier layers and quantum well layers, wherein at least a portion of the plurality of quantum well layers has different thicknesses, wherein a thickness of a first quantum well layer most adjacent to the p-type semiconductor layer is less than a thickness of a second quantum well layer adjacent thereto and greater than a thickness of a third quantum well layer, other than the first and second quantum well layers.

摘要翻译： 提供一种半导体发光器件，包括：n型半导体层; p型半导体层; 以及设置在n型半导体层和p型半导体层之间的有源层，并且包括多个交替层叠的量子势垒层和量子阱层，其中所述多个量子阱层的至少一部分具有不同的厚度 其中与p型半导体层最相邻的第一量子阱层的厚度小于与其相邻的第二量子阱层的厚度，并且大于第三量子阱层的厚度，除了第一和第二 量子阱层。

公开(公告)号：US09490391B2

公开(公告)日：2016-11-08

申请号：US14731391

申请日：2015-06-04

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Jong Hyun Lee ,  Min Hwan Kim ,  Eun Deok Sim ,  Ji Heon Oh ,  Heon Ho Lee ,  Ho Chul Lee ,  Jae Sung Hyun

IPC分类号： H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L33/06 ,  H01L33/32 ,  H01L33/08

CPC分类号： H01L33/06 ,  H01L33/08 ,  H01L33/32

摘要： A semiconductor light emitting device may include: a first conductivity-type semiconductor layer; an active layer disposed on the first conductivity-type semiconductor layer and including a plurality of quantum barrier layers and a plurality of quantum well layers which are alternately stacked; and a second conductivity-type semiconductor layer disposed on the active layer. A quantum barrier layer closest to the second conductivity-type semiconductor layer, among the plurality of quantum barrier layers, may include a first undoped region and a first doped region disposed on the first undoped region and having a thickness greater than or equal to that of the first undoped region. Each of the first undoped region and the first doped region may include a plurality of first unit layers having different energy band gaps, and at least one hole accumulation region.

摘要翻译： 半导体发光器件可以包括：第一导电型半导体层; 设置在所述第一导电型半导体层上并且包括多个量子势垒层和交替层叠的多个量子阱层的有源层; 以及设置在有源层上的第二导电型半导体层。 在多个量子势垒层中最靠近第二导电类型半导体层的量子势垒层可以包括第一未掺杂区域和设置在第一未掺杂区域上的第一掺杂区域，并且具有大于或等于 第一个未掺杂的地区。 第一未掺杂区域和第一掺杂区域中的每一个可以包括具有不同能带隙的多个第一单元层和至少一个空穴积聚区域。

公开(公告)号：US20130146840A1

公开(公告)日：2013-06-13

申请号：US13707027

申请日：2012-12-06

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Sang Heon Han ,  Jeong Wook Lee ,  Jae Sung Hyun ,  Jin Young Lim ,  Dong Joon Kim ,  Young Sun Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/0025 ,  H01L33/06 ,  H01L33/32

摘要： A semiconductor light emitting device includes: n-type and p-type semiconductor layers; and an active layer disposed between the n-type and p-type semiconductor layers. The active layer has a structure in which a plurality of quantum well layers and a plurality of quantum barrier layers are alternately disposed, wherein the plurality of quantum well layers are made of AlxInyGa1-x-yN (0≦x

摘要翻译： 半导体发光器件包括：n型和p型半导体层; 以及设置在n型和p型半导体层之间的有源层。 有源层具有多个量子阱层和多个量子势垒层交替设置的结构，其中多个量子阱层由Al x In y Ga 1-x-y N（0 @ x <1,0

公开(公告)号：US08716694B2

公开(公告)日：2014-05-06

申请号：US13707027

申请日：2012-12-06

申请人： Samsung Electronics Co., Ltd.

发明人： Sang Heon Han ,  Jeong Wook Lee ,  Jae Sung Hyun ,  Jin Young Lim ,  Dong Joon Kim ,  Young Sun Kim

IPC分类号： H01L33/32 ,  H01L33/06

CPC分类号： H01L33/0025 ,  H01L33/06 ,  H01L33/32

摘要： A semiconductor light emitting device includes: n-type and p-type semiconductor layers; and an active layer disposed between the n-type and p-type semiconductor layers. The active layer has a structure in which a plurality of quantum well layers and a plurality of quantum barrier layers are alternately disposed, wherein the plurality of quantum well layers are made of AlxInyGa1-x-yN (0≦x

摘要翻译： 半导体发光器件包括：n型和p型半导体层; 以及设置在n型和p型半导体层之间的有源层。 有源层具有多个量子阱层和多个量子势垒层交替设置的结构，其中多个量子阱层由Al x In y Ga 1-x-y N（0＆nlE; x <1,0

公开(公告)号：US10236414B2

公开(公告)日：2019-03-19

申请号：US15718484

申请日：2017-09-28

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Dong Yul Lee ,  Jung Kyu Park ,  Jae Sung Hyun

IPC分类号： H01L33/24 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  H01L33/44 ,  H01L33/46 ,  H01L33/40 ,  H01L33/42 ,  H01L33/02 ,  H01L33/48 ,  H01L33/62

摘要： A semiconductor light emitting device and a method of manufacturing a semiconductor light emitting device, the device including a first conductive semiconductor layer including a plurality of V-shaped recesses; an active layer on the first conductive semiconductor layer along a shape of the plurality of V-shaped recesses; a second conductive semiconductor layer on the active layer; a reflection assisting layer on the second conductive semiconductor layer; and a reflection layer on the reflection assisting layer, wherein a thickness of the second conductive semiconductor layer is 45 nm to 100 nm.

公开(公告)号：US09362447B2

公开(公告)日：2016-06-07

申请号：US14508784

申请日：2014-10-07

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Jong Hyun Lee ,  Sang Heon Han ,  Suk Ho Yoon ,  Jae Sung Hyun

IPC分类号： H01L33/00 ,  H01L29/15 ,  H01S5/20 ,  H01S5/34 ,  H01L33/04 ,  H01L33/14 ,  H01L33/02 ,  H01L33/06

CPC分类号： H01L33/04 ,  H01L29/15 ,  H01L33/02 ,  H01L33/025 ,  H01L33/06 ,  H01L33/14 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48237 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/8592 ,  H01S5/20 ,  H01S5/34 ,  H01L2924/00014

摘要： There is provided a semiconductor light emitting device. The device includes an n-type semiconductor layer, and a p-type semiconductor layer. The p-type semiconductor layer includes a plurality of first layers and second layers, each containing a p-type impurity and are alternately stacked. The impurity concentrations of the plurality of first layers increase in a direction away from the n-type semiconductor layer. An active layer is disposed between the n-type semiconductor layer and the p-type semiconductor layer.

摘要翻译： 提供了一种半导体发光器件。 该器件包括n型半导体层和p型半导体层。 p型半导体层包括多个第一层和第二层，每层包含p型杂质并且交替地层叠。 多个第一层的杂质浓度在远离n型半导体层的方向上增加。 在n型半导体层和p型半导体层之间设置有源层。

公开(公告)号：US09337391B2

公开(公告)日：2016-05-10

申请号：US14661950

申请日：2015-03-18

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Jai Won Jean ,  Min Hwan Kim ,  Eun Deok Sim ,  Jong Hyun Lee ,  Heon Ho Lee ,  Ho Chul Lee ,  Jae Sung Hyun

IPC分类号： H01L21/00 ,  H01L33/32 ,  H01L33/00 ,  H01L33/02 ,  H01L33/06 ,  H01L33/14 ,  H01L33/50 ,  H01L33/24 ,  H01L33/46 ,  B82Y20/00

CPC分类号： H01L33/325 ,  B82Y20/00 ,  H01L33/0025 ,  H01L33/025 ,  H01L33/06 ,  H01L33/14 ,  H01L33/24 ,  H01L33/46 ,  H01L33/502 ,  Y10S977/95

摘要： A semiconductor light emitting device includes an n-type semiconductor layer, a border layer disposed on the n-type semiconductor layer, having band gap energy decreasing in a single direction, and represented by an empirical formula AlxInyGa1−x−yN (0≦x≦0.1, 0.01≦y≦0.1), an active layer disposed on the border layer and having a structure in which one or more InGaN layers and one or more GaN layers are alternately stacked, and a p-type semiconductor layer.

摘要翻译： 半导体发光器件包括n型半导体层，设置在n型半导体层上的边界层，其带隙能量在单个方向上减小，并且由经验公式AlxInyGa1-x-yN（0＆n1E; x＆ ; 0.1,0.01＆amp; nlE; y＆nlE; 0.1），设置在边界层上并具有一个或多个InGaN层和一个或多个GaN层交替堆叠的结构的有源层和p型半导体层。