公开(公告)号：US08828751B2

公开(公告)日：2014-09-09

申请号：US13844569

申请日：2013-03-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Do Young Rhee ,  Tan Sakong ,  Ki Sung Kim ,  Suk Ho Yoon ,  Young Sun Kim ,  Sung Tae Kim

IPC: H01L21/00 ,  H01L33/00 ,  H01L33/26

CPC classification number: H01L33/005 ,  H01L33/26

Abstract: Provided a method of manufacturing a semiconductor light emitting device, the method includes forming a light emitting structure by growing a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer on a substrate. The forming of the light emitting structure includes: forming a protective layer after a portion of the light emitting structure is formed forming a sacrificial layer on the protective layer; and continuously forming a further portion of the light emitting structure on the sacrificial layer.

Abstract translation: 提供一种制造半导体发光器件的方法，该方法包括通过在衬底上生长第一导电类型半导体层，有源层和第二导电类型半导体层来形成发光结构。 发光结构的形成包括：在形成发光结构的一部分之后形成保护层，在保护层上形成牺牲层; 并且在牺牲层上连续地形成发光结构的另一部分。

公开(公告)号：US08846429B2

公开(公告)日：2014-09-30

申请号：US13846905

申请日：2013-03-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki Ho Park ,  Ki Sung Kim ,  Chul Min Kim ,  Suk Ho Yoon ,  Tae Hyun Lee

IPC: H01L21/00 ,  H01L21/30 ,  H01L21/46 ,  H01L33/00

CPC classification number: H01L33/0079

Abstract: A method for manufacturing a semiconductor light emitting device is provided. The method includes forming a light emitting structure by sequentially growing a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a semiconductor growth substrate A support unit is disposed on the second conductivity-type semiconductor layer, so as to be combined with the light emitting structure. The semiconductor growth substrate is separated from the light emitting structure. An interface between the semiconductor growth substrate and a remaining light emitting structure is wet-etched such that the light emitting structure remaining on the separated semiconductor growth substrate is separated therefrom. The semiconductor growth substrate is cleaned.

Abstract translation: 提供一种制造半导体发光器件的方法。 该方法包括通过在半导体生长衬底上顺序生长第一导电类型半导体层，有源层和第二导电类型半导体层来形成发光结构。支撑单元设置在第二导电型半导体层上， 以便与发光结构组合。 半导体生长衬底与发光结构分离。 湿式蚀刻半导体生长衬底和剩余的发光结构之间的界面，使得保留在分离的半导体生长衬底上的发光结构与其分离。 清洁半导体生长衬底。

公开(公告)号：US09410247B2

公开(公告)日：2016-08-09

申请号：US13655696

申请日：2012-10-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong Hyun Lee ,  Hyun Seok Ryu ,  Jung Hyun Lee ,  Ki Sung Kim ,  Suk Ho Yoon ,  Young Sun Kim

IPC: C23C16/455 ,  C23C16/458 ,  H01L21/02

CPC classification number: C23C16/45565 ,  C23C16/45578 ,  C23C16/4558 ,  C23C16/4583 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262

Abstract: A chemical vapor deposition apparatus can include a reaction chamber having a reaction space therein; a wafer boat disposed in the reaction space, the wafer boat arranged and structured to support a plurality of wafers; and a gas supplying part disposed in the reaction chamber to supply two or more reaction gases to the plurality of wafers. The gas supplying part can include a plurality of gas pipes disposed in the reaction chamber to supply the two or more reaction gases from outside to the reaction space; and a plurality of supplying pipes disposed around the wafer boat, wherein each of the supplying pipes is connected to two or more corresponding gas pipes, and wherein each supplying pipe is configured to supply the two or more reaction gases supplied by the two or more corresponding gas pipes to a corresponding one of the wafers.

Abstract translation: 化学气相沉积装置可以包括其中具有反应空间的反应室; 设置在所述反应空间中的晶片舟，所述晶片舟被布置和构造为支撑多个晶片; 以及设置在所述反应室中以将多个反应气体供应到所述多个晶片的气体供给部。 气体供给部可以包括设置在反应室中的多个气体管道，用于从外部向反应空间供给两种或更多种反应气体; 以及设置在所述晶片舟周围的多个供给管，其中，所述供给管中的每一个连接到两个以上对应的气体管，并且其中每个供给管被构造成供给由所述两个或更多个相应的 将气体管道连接到相应的一个晶片。

公开(公告)号：US20130221398A1

公开(公告)日：2013-08-29

申请号：US13774376

申请日：2013-02-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Bum Joon Kim ,  Young Sun Kim ,  Suk Ho Yoon ,  Ki Sung Kim ,  Dong Chul Shin

IPC: H01L33/62

CPC classification number: H01L33/62 ,  H01L33/145 ,  H01L33/382 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor light emitting device includes a conductive substrate, a light emitting structure, a first contact layer, a conductive via and a current interruption region. The light emitting structure is disposed on the conductive substrate and includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. The first contact layer is disposed between the conductive substrate and the first conductive semiconductor layer. The conductive via is disposed to extend from the conductive substrate to be connected to the second conductive semiconductor layer. The current interruption region is disposed in a region adjacent to the conductive via in the light emitting structure.

Abstract translation: 半导体发光器件包括导电衬底，发光结构，第一接触层，导电通孔和电流中断区域。 发光结构设置在导电基板上，并且包括第一导电半导体层，有源层和第二导电半导体层。 第一接触层设置在导电基板和第一导电半导体层之间。 导电通孔设置成从导电基板延伸以连接到第二导电半导体层。 电流中断区域设置在发光结构中与导电通孔相邻的区域中。