SEMICONDUCTOR DEVICES
    3.
    发明申请

    公开(公告)号:US20230065281A1

    公开(公告)日:2023-03-02

    申请号:US17751819

    申请日:2022-05-24

    Abstract: A semiconductor device including a first insulating structure on a substrate and including a first etch stop layer and a first interlayer insulating layer on the first etch stop layer, a second insulating structure on the first insulating structure and including a second etch stop layer and a second interlayer insulating layer on the second etch stop layer, a conductive line penetrating through the second insulating structure, and extending in a first direction parallel to an upper surface of the substrate, and a plurality of contacts penetrating through the first insulating structure and connected to the conductive line may be provided. The conductive line may include a protrusion extending below the second insulating structure and penetrating through the first interlayer insulating layer to be in contact with the first etch stop layer.

    ELECTRONIC DEVICE AND CONTROL METHOD THEREFOR

    公开(公告)号:US20220070248A1

    公开(公告)日:2022-03-03

    申请号:US17521594

    申请日:2021-11-08

    Abstract: An electronic device includes a memory storing a first data set comprising a first plurality of files; a communicator comprising circuitry; and a processor configured to: identify an amount of files having a size less than a first threshold value among the first plurality of files; based on the identified amount of files and a communication state with a server, determine a size of a unit file to be transmitted to the server; convert the identified files having the size less than the first threshold value into the determined size unit, and generate metadata for the first data set while converting the identified files; and control the communicator to transmit the first data set including the converted files and the metadata for the first data set to the server.

Patent Agency Ranking