公开(公告)号：US10268621B2

公开(公告)日：2019-04-23

申请号：US14800701

申请日：2015-07-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Hoon Lee ,  Byoung-Sul Kim ,  Kwang-Hee Lee ,  Kwan-Yong Jin ,  Sung-Taek Hong

IPC: G06F13/40 ,  G06F13/16

Abstract: Provided are an application processor and a semiconductor system including the same. The semiconductor system includes the application processor, which may include a first register value and of which an operation is controlled by the first register value. The semiconductor system also includes a semiconductor device, which may include a second register value and of which an operation is controlled by the second register value, and a memory storing a third register value that is a copy of the first register value and a fourth register value that is a copy of the second register value. If the stored third register value is changed, the changed third register value is mapped onto the first register value of the processor, and if the fourth register value is changed, the changed fourth register value is mapped onto the second register value.

公开(公告)号：US09552210B2

公开(公告)日：2017-01-24

申请号：US14101374

申请日：2013-12-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Mi-Young Woo ,  Kwan-Yong Jin ,  Seock-Chan Hong

IPC: G06F9/44 ,  G11C7/20 ,  G11C29/36 ,  G11C11/40 ,  G11C29/04

CPC classification number: G06F9/4401 ,  G11C7/20 ,  G11C11/40 ,  G11C29/36 ,  G11C2029/0407

Abstract: A method is provided for operating a volatile memory device. The method includes performing a first initialization operation for the volatile memory device based on a boot code received from an external memory controller, storing the boot code in an internal register, reading the boot code stored in the internal register based on a first signal received from the external memory controller when the first initialization operation is not normally performed, and performing a second initialization operation for the volatile memory device based on the boot code read from the internal register.

Abstract translation: 提供了一种用于操作易失性存储器件的方法。 该方法包括：根据从外部存储器控制器接收到的引导代码对易失性存储器件执行第一初始化操作，将引导代码存储在内部寄存器中，基于从第一信号接收到的第一信号读取存储在内部寄存器中的引导代码 当第一初始化操作不正常地执行时，外部存储器控制器，以及基于从内部寄存器读取的引导代码对易失性存储器件执行第二初始化操作。