公开(公告)号：US20180096935A1

公开(公告)日：2018-04-05

申请号：US15497283

申请日：2017-04-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyo-Jin KIM ,  Chang-Hwa KIM ,  Hwi-Chan JUN ,  Chul-Hong PARK ,  Jae-Seok YANG ,  Kwan-Young CHUN

IPC: H01L23/535 ,  H01L21/768 ,  H01L29/06 ,  H01L29/66 ,  H01L29/417 ,  H01L29/78 ,  H01L27/088 ,  H01L21/8234

CPC classification number: H01L23/535 ,  H01L21/76895 ,  H01L21/823431 ,  H01L21/823475 ,  H01L21/823481 ,  H01L21/845 ,  H01L27/088 ,  H01L27/0886 ,  H01L27/1211 ,  H01L29/0649 ,  H01L29/41791 ,  H01L29/66545 ,  H01L29/785

Abstract: A semiconductor device and a method of manufacturing a semiconductor device, the device including gate structures on a substrate; source/drain layers on portions of the substrate that are adjacent the gate structures, respectively; first contact plugs contacting upper surfaces of the source/drain layers, respectively; a second contact plug contacting one of the gate structures, a sidewall of the second contact plug being covered by an insulating spacer; and a third contact plug commonly contacting an upper surface of at least one of the gate structures and at least one of the first contact plugs, at least a portion of a sidewall of the third contact plug not being covered by an insulating spacer.

公开(公告)号：US20190122988A1

公开(公告)日：2019-04-25

申请号：US16217220

申请日：2018-12-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyo-Jin KIM ,  Chang-Hwa KIM ,  Hwi-Chan JUN ,  Chul-Hong PARK ,  Jae-Seok YANG ,  Kwan-Young CHUN

IPC: H01L23/535 ,  H01L27/088 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/66 ,  H01L29/417 ,  H01L21/768 ,  H01L27/12 ,  H01L21/84 ,  H01L29/78

Abstract: A semiconductor device and a method of manufacturing a semiconductor device, the device including gate structures on a substrate; source/drain layers on portions of the substrate that are adjacent the gate structures, respectively; first contact plugs contacting upper surfaces of the source/drain layers, respectively; a second contact plug contacting one of the gate structures, a sidewall of the second contact plug being covered by an insulating spacer; and a third contact plug commonly contacting an upper surface of at least one of the gate structures and at least one of the first contact plugs, at least a portion of a sidewall of the third contact plug not being covered by an insulating spacer.

公开(公告)号：US20210098377A1

公开(公告)日：2021-04-01

申请号：US17120616

申请日：2020-12-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyo-Jin KIM ,  Chang-Hwa KIM ,  Hwi-Chan JUN ,  Chul-Hong PARK ,  Jae-Seok YANG ,  Kwan-Young CHUN

IPC: H01L23/535 ,  H01L27/088 ,  H01L21/84 ,  H01L27/12 ,  H01L21/768 ,  H01L29/08 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78

Abstract: A semiconductor device and a method of manufacturing a semiconductor device, the device including gate structures on a substrate; source/drain layers on portions of the substrate that are adjacent the gate structures, respectively; first contact plugs contacting upper surfaces of the source/drain layers, respectively; a second contact plug contacting one of the gate structures, a sidewall of the second contact plug being covered by an insulating spacer; and a third contact plug commonly contacting an upper surface of at least one of the gate structures and at least one of the first contact plugs, at least a portion of a sidewall of the third contact plug not being covered by an insulating spacer.

公开(公告)号：US20190123140A1

公开(公告)日：2019-04-25

申请号：US16051667

申请日：2018-08-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Pan-Jae Park ,  Jae-Seok Yang ,  Young-Hun KIM ,  Hae-Wang LEE ,  Kwan-Young CHUN

IPC: H01L29/08 ,  H01L21/8234 ,  H01L29/66 ,  H01L27/088 ,  H01L27/02 ,  H01L29/78

Abstract: A semiconductor device is provided including a substrate, a first gate structure, a first contact plug and a power rail. The substrate includes first and second cell regions extending in a first direction, and a power rail region connected to each of opposite ends of the first and second cell regions in a second direction. The first gate structure extends in the second direction from a boundary area between the first and second cell regions to the power rail region. The first contact plug is formed on the power rail region, and contacts an upper surface of the first gate structure. The power rail extends in the first direction on the power rail region, and is electrically connected to the first contact plug. The power rail supplies a turn-off signal to the first gate structure through the first contact plug to electrically insulate the first and second cell regions.