公开(公告)号：US20230171965A1

公开(公告)日：2023-06-01

申请号：US18070789

申请日：2022-11-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seungmin LEE ,  Kwanyong KIM ,  Jihwan YU

IPC: H10B43/40 ,  H10B41/35 ,  H01L23/528 ,  H10B41/40 ,  H10B41/27 ,  H10B43/35 ,  H10B43/27

CPC classification number: H01L27/11573 ,  H01L27/11524 ,  H01L23/5283 ,  H01L27/11526 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11582

Abstract: A semiconductor device including a stack structure including gate stack and dummy stack regions; a vertical memory structure penetrating through the gate stack region; and a first vertical dummy structure penetrating through a portion of the dummy stack region, wherein the gate stack region includes interlayer insulating and gate layers alternately and repeatedly stacked on each other, the dummy stack region includes dummy insulating and dummy horizontal layers alternately and repeatedly stacked on each other, at least one of the dummy horizontal layers and the gate layers include materials different from each other, an upper surface of the vertical memory structure is at a higher level than an upper surface of the first vertical dummy structure, and a lowermost dummy upper horizontal layer at a higher level than the first vertical dummy structure overlaps the first vertical dummy structure.

公开(公告)号：US20220093638A1

公开(公告)日：2022-03-24

申请号：US17339129

申请日：2021-06-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Juyeon JUNG ,  Kwanyong KIM ,  Haemin LEE ,  Juyoung LIM ,  Wonseok CHO

IPC: H01L27/11582 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11526 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11565 ,  H01L27/11573

Abstract: A semiconductor memory device includes a substrate having a first region, a second region, and a third region main separation regions extending in the first direction and apart from each other in a second direction, first auxiliary separation regions extending in the first direction and spaced apart from each other in the second direction, and second auxiliary separation regions extending in the first direction and spaced apart from each other in the second direction. The first auxiliary separation regions are at a first pitch in the second direction between the main separation regions, the second auxiliary separation regions are disposed at a second pitch, smaller than the first pitch in the second direction between the main separation regions, and the first auxiliary separation regions and the second auxiliary separation regions are shifted from each other in the second direction.