公开(公告)号：US20210351047A1

公开(公告)日：2021-11-11

申请号：US17381246

申请日：2021-07-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Beom Jin YOO ,  Min Hyoung KIM ,  Sang Ki NAM ,  Won Hyuk JANG ,  Kyu Hee HAN ,  Young Do KIM ,  Jeong Min BANG

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/02

Abstract: A cleaning solution production system is for cleaning a semiconductor substrate. The system includes a pressure tank, a plasma reaction tank configured to form a plasma in gas bubbles suspended in a decompressed liquid obtained from the pressure tank to thereby generate radical species in the decompressed liquid, a storage tank configured to store a cleaning solution containing the radical species generated in the plasma reaction tank, and a nozzle configured to supply the cleaning solution from the storage tank to a semiconductor substrate.

公开(公告)号：US20200051909A1

公开(公告)日：2020-02-13

申请号：US16285583

申请日：2019-02-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji Young KIM ,  Kyu Hee HAN ,  Sung Bin PARK ,  Yeong Gil KIM ,  Jong Min BAEK ,  Kyoung Woo LEE ,  Deok Young JUNG

IPC: H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L21/311 ,  H01L21/768

Abstract: A semiconductor device includes a lower wiring, an interlayer insulation film above the lower wiring and including a first portion having a first density, and a second portion on the first portion, the first portion and the second portion having a same material, and the second portion having a second density smaller than the first density, an upper wiring in the second portion of the interlayer insulating film, and a via in the first portion of the interlayer insulating film, the via connecting the upper wiring and the lower wiring.

公开(公告)号：US20200035515A1

公开(公告)日：2020-01-30

申请号：US16505488

申请日：2019-07-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Beom Jin YOO ,  Min Hyoung KIM ,  Sang Ki NAM ,  Won Hyuk JANG ,  Kyu Hee HAN ,  Young Do KIM ,  Jeong Min BANG

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/02

Abstract: A cleaning solution production system is for cleaning a semiconductor substrate. The system includes a pressure tank, a plasma reaction tank configured to form a plasma in gas bubbles suspended in a decompressed liquid obtained from the pressure tank to thereby generate radical species in the decompressed liquid, a storage tank configured to store a cleaning solution containing the radical species generated in the plasma reaction tank, and a nozzle configured to supply the cleaning solution from the storage tank to a semiconductor substrate.

公开(公告)号：US20200251376A1

公开(公告)日：2020-08-06

申请号：US16854979

申请日：2020-04-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyu Hee HAN ,  Jong Min BAEK ,  Viet Ha NGUYEN ,  Woo Kyung YOU ,  Sang Shin JANG ,  Byung Hee KIM

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L23/528 ,  H01L21/311

Abstract: A semiconductor device includes a first interlayer dielectric film on a substrate, first and second wires respectively extending in a first direction within the first interlayer dielectric film, the first and second wires being adjacent to each other in a second direction different from the first direction, a hard mask pattern on the first interlayer dielectric film, the hard mask pattern including an opening, and an air gap within the first interlayer dielectric film, the air gap including a first portion overlapping vertically with the opening and a second portion not overlapping with the opening in the first direction.

公开(公告)号：US20200020551A1

公开(公告)日：2020-01-16

申请号：US16421473

申请日：2019-05-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Beom Jin YOO ,  Min Hyoung KIM ,  Sang Ki NAM ,  Lu SIQING ,  Won Hyuk JANG ,  Kyu Hee HAN

IPC: H01L21/67 ,  B08B3/10 ,  H01L21/687

Abstract: A plasma generator, a cleaning liquid processing apparatus including the same, a semiconductor cleaning apparatus, and a cleaning liquid processing method are provided. The cleaning liquid processing apparatus comprising a bubble formation section configured to lower a pressure of a mixed liquid obtained by mixing a liquid and a gas to form bubbles in the mixed liquid, a plasma generator connected to the bubble formation section and configured to apply a voltage to the mixed liquid to form plasma in the bubbles formed in the mixed liquid, a mixing section connected to the plasma generator and configured to dissolve radicals included in the plasma into the mixed liquid, and a discharge nozzle connected to the mixing section and configured to discharge the mixed liquid to a wafer.

公开(公告)号：US20180096880A1

公开(公告)日：2018-04-05

申请号：US15612102

申请日：2017-06-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyu Hee HAN ,  Jong Min BAEK ,  Viet Ha NGUYEN ,  Woo Kyung YOU ,  Sang Shin JANG ,  Byung Hee KIM

IPC: H01L21/768 ,  H01L23/532 ,  H01L23/528 ,  H01L21/311

CPC classification number: H01L21/7682 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/76826 ,  H01L21/76834 ,  H01L21/76849 ,  H01L23/5222 ,  H01L23/5283 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295

Abstract: A semiconductor device includes a first interlayer dielectric film on a substrate, first and second wires respectively extending in a first direction within the first interlayer dielectric film, the first and second wires being adjacent to each other in a second direction different from the first direction, a hard mask pattern on the first interlayer dielectric film, the hard mask pattern including an opening, and an air gap within the first interlayer dielectric film, the air gap including a first portion overlapping vertically with the opening and a second portion not overlapping with the opening in the first direction.