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公开(公告)号：US20180341582A1
公开(公告)日：2018-11-29
申请号：US16056781
申请日：2018-08-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sangkwon Moon , Kyung Ho Kim , Seunguk Shin , Sung Won Jung
IPC: G06F12/02
Abstract: An access method of a nonvolatile memory device included in a user device includes receiving a write request to write data into the nonvolatile memory device; detecting an application issuing the write request, a user context, a queue size of a write buffer, an attribute of the write-requested data, or an operation mode of the user device; and deciding one of a plurality of write modes to use for writing the write-requested data into the nonvolatile memory device according to the detected information. The write modes have different program voltages and verify voltage sets.
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公开(公告)号：US20240063262A1
公开(公告)日：2024-02-22
申请号：US18127298
申请日：2023-03-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yong Uk Jeon , Kyung Ho Kim , Ki Hwan Kim , Kang Hun Moon , Cho Eun Lee
IPC: H01L29/06 , H01L29/66 , H01L29/775 , H01L29/423 , H01L29/786 , H01L27/092
CPC classification number: H01L29/0673 , H01L29/66545 , H01L29/775 , H01L29/42392 , H01L29/78696 , H01L29/66553 , H01L27/092
Abstract: A semiconductor device is provided. The semiconductor device includes: an active pattern extending in on a substrate; nanosheets stacked on the active pattern; a gate electrode on the active pattern and surrounding the nanosheets; a source/drain trench on the active pattern adjacent the gate electrode; and a source/drain region in the source/drain trench, The source/drain region includes: a first layer provided along a sidewall and a bottom surface of the source/drain trench, the first layer having a first n-type impurity doped therein; a second layer on the first layer in the source/drain trench, the second layer having germanium (Ge) doped therein; and a third layer filling a remaining portion of the source/drain trench on the second layer, the third layer having a second n-type impurity doped therein.
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公开(公告)号：US10817624B2
公开(公告)日：2020-10-27
申请号：US15975008
申请日：2018-05-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jin-Hwan Park , Kyung Ho Kim , Min-Chul Kim , Sagar Uttarwar , Yong Gil Song , Min Gon Shin , Sun-Mi Yoo , Hyun Su Jang , Seung Yeun Jeong , Ki Hyun Choi
Abstract: A storage device includes a non-volatile memory including a first block, a second block and a block management area that stores an initial data write time and a final data write time for each of the first block and the second block. The storage device also includes a memory controller that determines a creation time and a modification time for first data in response to a permanently delete command identifying the first data, selects at least one of the first block and the second block to be permanently deleted by comparing the initial data write time and the final data write time for each of the first block and the second block with the creation time and the modification time, and permanently deletes the selected at least one of the first block and the second block.
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公开(公告)号：US20150205716A1
公开(公告)日：2015-07-23
申请号：US14489676
申请日：2014-09-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sangkwon Moon , Ji Hong Kim , Ji Sung Park , Hyunchul Park , Kyung Ho Kim
IPC: G06F12/02
CPC classification number: G06F12/0238 , G06F3/06 , G06F17/30156 , G06F17/30191 , G06F17/3033
Abstract: A storage device is provided which includes a nonvolatile memory device configured to store a plurality of reference data, a memory configured to store a hash manage table used to manage a plurality of reference hash keys of each of the plurality of reference data, a hash key generator configured to generate a plurality of hash keys based on write requested data, and a memory controller configured to compare the plurality of hash keys and reference hash keys of each reference data to determine whether to store the write requested data in the nonvolatile memory device. The memory controller selects one of the plurality of reference data according to a similarity between the plurality of hash keys and the plurality of reference hash keys of each reference data and stores the write requested data and the selected reference data in the nonvolatile memory device to refer to each other.
Abstract translation: 提供一种存储装置，其包括被配置为存储多个参考数据的非易失性存储装置，被配置为存储用于管理多个参考数据中的每一个的多个参考散列密钥的散列管理表的存储器，散列密钥 生成器，其被配置为基于写入请求的数据生成多个散列密钥;以及存储器控制器，被配置为比较每个参考数据的多个散列密钥和参考散列密钥，以确定是否将写入请求的数据存储在非易失性存储器件中。 存储器控制器根据多个散列键和每个参考数据的多个参考散列键之间的相似度来选择多个参考数据中的一个，并将写入请求的数据和所选择的参考数据存储在非易失性存储器件中以引用 对彼此。
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公开(公告)号：US11023137B2
公开(公告)日：2021-06-01
申请号：US16415068
申请日：2019-05-17
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kyung-San Kim , Kyung Ho Kim , Seokhwan Kim , Seunguk Shin , Jihyun Lim
Abstract: A computer system includes a host and a storage device. The host provides an input/output request (IO request). The storage device receives the IO request from the host and sends an interrupt informing input/output completion (IO completion) to the host after completing the IO request. The host adjusts the number of generated interrupts of the storage device using the number of delayed IOs. The computer system may adaptively control interrupt generation of the storage device based on a load status of a CPU or the number of delayed IOs. The interrupt generation of the storage device may be adjusted to obtain a CPU gain without loss of performance or processing time of the computer system.
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Patent Agency Ranking
6.发明授权公开(公告)号：US10789160B2
公开(公告)日：2020-09-29
申请号：US14446352
申请日：2014-07-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sung Yong Seo , Kyung Ho Kim , Seung Uk Shin , Yeong Jae Woo , Hyun Ju Kim , Jeong Hoon Cho
Abstract: A method of operating a storage device which includes a non-volatile memory including a normal unit configured to store normal data and a swap unit configured to store swap data and a controller configured to control the non-volatile memory is provided. The method includes receiving the swap data and a unit selection signal for selecting the swap unit from a host; and processing the swap data according to a data processing policy of the swap unit and writing the processed swap data to the swap unit. The data processing policy of the swap unit may be different from a data processing policy of the normal unit.
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公开(公告)号：US10243056B2
公开(公告)日：2019-03-26
申请号：US15479459
申请日：2017-04-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hyun Kwan Yu , Kyung Ho Kim , Dong Suk Shin
IPC: H01L29/49 , H01L27/11 , H01L29/06 , H01L29/08 , H01L29/16 , H01L29/161 , H01L29/165 , H01L29/66 , H01L29/78 , H01L21/8234 , H01L27/088 , H01L21/8238 , H01L27/092
Abstract: A semiconductor device includes a field insulating film including a first region and a second region on a substrate, a recess in the first region of the field insulating film, a gate electrode on the second region of the field insulating film, and a gate spacer along a sidewall of the gate electrode and a sidewall of the recess.
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公开(公告)号：US10146627B2
公开(公告)日：2018-12-04
申请号：US15726375
申请日：2017-10-05
Applicant: Samsung Electronics Co., Ltd.
Inventor： Yang Yu , Chang-Eun Choi , Kyung Ho Kim , Walter Jun , Wonchuri Zoo , Robert Brennan
Abstract: Embodiments of the inventive concept include computer-implemented method for shadowing one or more boot images of a mobile device. The technique can include duplicating boot images to shadow partitions in a user area of a non-volatile memory device such as a flash memory. The technique can include detecting boot image corruption, and causing a mobile device to boot from the shadow partitions. The technique can include dynamically shadowing and releasing blocks used by the shadow partitions. The technique can include boot failure recovery and bad image preservation through firmware flash translation layer (FTL) logical to physical mapping updates. Boot image corruption failures can be recovered from and/or debugged using the shadow partitions.
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公开(公告)号：US09823972B2
公开(公告)日：2017-11-21
申请号：US14663220
申请日：2015-03-19
Applicant: Samsung Electronics Co., Ltd.
Inventor： Yang Yu , Chang-Eun Choi , Kyung Ho Kim , Walter Jun , Wonchuri Zoo , Robert Brennan
CPC classification number: G06F11/1417 , G06F11/1004 , G06F11/1666 , G06F11/20
Abstract: Embodiments of the inventive concept include computer-implemented method for shadowing one or more boot images of a mobile device. The technique can include duplicating boot images to shadow partitions in a user area of a non-volatile memory device such as a flash memory. The technique can include detecting boot image corruption, and causing a mobile device to boot from the shadow partitions. The technique can include dynamically shadowing and releasing blocks used by the shadow partitions. The technique can include boot failure recovery and bad image preservation through firmware flash translation layer (FTL) logical to physical mapping updates. Boot image corruption failures can be recovered from and/or debugged using the shadow partitions.
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公开(公告)号：US20130179647A1
公开(公告)日：2013-07-11
申请号：US13734244
申请日：2013-01-04
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyunchul Park , Sangmok Kim , Kyung Ho Kim , Otae Bae , Donggi Lee
IPC: G06F12/02
CPC classification number: G06F12/02 , G06F12/0238 , G06F12/0246 , G06F2212/7202 , G06F2212/7203
Abstract: Disclosed is a data managing method of a storage device which includes at least one nonvolatile memory device and a controller controlling the nonvolatile memory device. The data managing method includes receiving an input/output request and generating a section directing logical addresses based on the input/output request. The section is managed using section information, and the section information includes a start logical address corresponding to the input/output request, spatial locality information having the number of the directed logical addresses, and historical request information.
Abstract translation: 公开了一种存储装置的数据管理方法，其包括至少一个非易失性存储装置和控制非易失性存储装置的控制器。 数据管理方法包括接收输入/输出请求并根据输入/输出请求生成指向逻辑地址的部分。 该部分使用部分信息进行管理，部分信息包括与输入/输出请求对应的起始逻辑地址，具有定向逻辑地址数量的空间位置信息和历史请求信息。
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