公开(公告)号：US20190096673A1

公开(公告)日：2019-03-28

申请号：US16052063

申请日：2018-08-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SEUNG-HEON LEE ,  Koung-Min RYU ,  Kyung-Seok OH ,  Sang-Jin HYUN

IPC: H01L21/033 ,  H01L29/66 ,  H01L21/3213 ,  H01L21/67 ,  H01L21/02 ,  H01J37/32 ,  C23C16/50 ,  C23C16/24

Abstract: Disclosed are an apparatus for forming a layer and a method of forming the layer using the same. The apparatus includes a transfer chamber in which a substrate is transferred, a deposition chamber positioned at a side of the transfer chamber and performing a deposition process on the substrate to thereby form the layer on the substrate, and at least a de-hydrogen chamber positioned at another side of the transfer chamber and performing a de-hydrogen process on the layer on the substrate to reduce a hydrogen concentration in the layer. Accordingly, the de-hydrogen process is performed in the apparatus without unloading of the substrate from the apparatus.

公开(公告)号：US20130325154A1

公开(公告)日：2013-12-05

申请号：US13847090

申请日：2013-03-19

Applicant: SAMSUNG ELECTRONICS CO. LTD.

Inventor： Sang-Hoon OH ,  Kyung-Seok OH ,  Yong-Sun CHOI

IPC: G10L21/14

CPC classification number: G10L21/14 ,  G06F3/04855 ,  G06F3/04883 ,  G10H1/0008 ,  G10H2210/061 ,  G10H2220/005 ,  G10H2220/106 ,  G10H2230/015 ,  G11B27/105 ,  G11B27/28 ,  G11B27/34

Abstract: An electronic device and a method for high speed visualization of an audio stream are provided. The method of operating the electronic device includes extracting only header information from at least one frame included in a specific audio file, extracting a global gain value, which is an average volume of respective frames, by using the extracted frame header information, filtering the extracted global gain value, and displaying the filtered value.

Abstract translation: 提供了一种用于音频流的高速可视化的电子设备和方法。 操作电子设备的方法包括从包括在特定音频文件中的至少一个帧中提取标题信息，通过使用所提取的帧头信息来提取作为各帧的平均音量的全局增益值，对所提取的 全局增益值，并显示过滤的值。

公开(公告)号：US20190013401A1

公开(公告)日：2019-01-10

申请号：US16128152

申请日：2018-09-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Min KIM ,  Kyung-Seok OH ,  Cheol KIM ,  Heon-Jong SHIN ,  Jong-Ryeol YOO ,  Hyun-Jung LEE ,  Seong-Hoon JEONG

IPC: H01L29/78 ,  H01L27/12 ,  H01L21/84 ,  H01L29/66

Abstract: Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes a lower fin that protrudes from a substrate and extends in a first direction, an oxide film the lower fin, an upper fin that protrudes from the oxide film and that is spaced apart from the lower fin at a position corresponding to the lower fin, and a gate structure the upper fin that extends in a second direction to intersect the upper fin, wherein germanium (Ge) is included in a portion of the oxide film located between the lower fin and the upper fin.