公开(公告)号：US20230240073A1

公开(公告)日：2023-07-27

申请号：US18063878

申请日：2022-12-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yoonhwan SON ,  Miso KIM ,  Joongshik SHIN ,  Minjae OH

IPC: H10B43/27 ,  H10B43/10 ,  H10B43/35 ,  H10B43/40 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B41/40 ,  H10B41/50 ,  H10B43/50 ,  H01L21/28

CPC classification number: H10B43/27 ,  H10B43/10 ,  H10B43/35 ,  H10B43/40 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B41/40 ,  H10B41/50 ,  H10B43/50 ,  H01L29/40117

Abstract: A semiconductor device includes a substrate having a first region and a second region, a first stack structure in the first region, a first channel structure penetrating through the first stack structure and in contact with the substrate, and a second stack structure on the first stack structure and the first channel structure. The device includes a second channel structure penetrating through the second stack structure and connected to the first channel structure, a first molding structure in the second region, a first alignment structure penetrating through the first molding structure and in contact with the substrate, and a second molding structure on the first molding structure and the first alignment structure. The device includes a second alignment structure penetrating through the second molding structure and connected to the first alignment structure, and a protective layer between the first molding structure and the second molding structure.