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1.发明授权Flash memory device using adaptive program verification scheme and related method of operation 有权闪存器件采用自适应程序验证方案及相关操作方法公开(公告)号：US09076534B2
公开(公告)日：2015-07-07
申请号：US13841503
申请日：2013-03-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sang Yong Yoon , Ki Tae Park , Moo Sung Kim , Bo Geun Kim , Hyun jun Yoon
CPC classification number: G11C16/3459 , G11C11/56 , G11C11/5671 , G11C16/10 , G11C16/3454
Abstract: A method of programming a flash memory device comprises programming selected memory cells, performing a verification operation to determine whether the selected memory cells have reached a target program state, and determining a start point of the verification operation based on a programming characteristic associated with a detection of a pass bit during programming of an initial program state.
Abstract translation: 一种对闪速存储器件进行编程的方法包括编程所选择的存储器单元，执行验证操作以确定所选择的存储器单元是否已经达到目标程序状态，以及基于与检测相关联的编程特性来确定验证操作的起始点 在编程初始程序状态期间的通过位。
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公开(公告)号：US08705284B2
公开(公告)日：2014-04-22
申请号：US13891657
申请日：2013-05-10
Applicant: Samsung Electronics Co., Ltd.
Inventor： Moo Sung Kim , Han-Jun Lee
IPC: G11C16/04
CPC classification number: G11C16/10 , G11C16/3404
Abstract: A flash memory device includes a memory cell array made up of memory cells arranged in rows and columns. A first page of data is programmed in selected memory cells of the memory cell array, and a second page of data is subsequently programmed in the selected memory cells. The first page of data is programmed using a program voltage having a first start value, and the second page of data is programmed using a program voltage having a second start value determined by a programming characteristic of the selected memory cells.
Abstract translation: 闪速存储器件包括由以行和列排列的存储单元组成的存储单元阵列。 数据的第一页被编程在存储单元阵列的选定的存储单元中，随后在所选存储单元中编程第二页数据。 使用具有第一起始值的编程电压对数据的第一页进行编程，并且使用具有由所选存储单元的编程特性确定的第二起始值的编程电压对第二数据页进行编程。
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3.发明授权公开(公告)号：US09406394B2
公开(公告)日：2016-08-02
申请号：US14726927
申请日：2015-06-01
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sang Yong Yoon , Ki Tae Park , Moo Sung Kim , Bo Geun Kim , Hyun Jun Yoon
CPC classification number: G11C16/3459 , G11C11/56 , G11C11/5671 , G11C16/10 , G11C16/3454
Abstract: A method of programming a flash memory device comprises programming selected memory cells, performing a verification operation to determine whether the selected memory cells have reached a target program state, and determining a start point of the verification operation based on a programming characteristic associated with a detection of a pass bit during programming of an initial program state.
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Patent Agency Ranking
公开(公告)号：US09378837B2
公开(公告)日：2016-06-28
申请号：US14805176
申请日：2015-07-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Moo Sung Kim , Wook Ghee Hahn
CPC classification number: G11C16/26 , G11C11/5642 , G11C16/0483 , G11C16/10
Abstract: A method of providing an operating voltage in a memory device includes applying a read voltage to a selected word line while applying a first pass voltage to at least one unselected word line among word lines adjacent to the selected word line; and while applying a second pass voltage to the remaining unselected word lines (other than the at least one unselected word line to which the first pass voltage is applied). The level of the first pass voltage is higher than the level of the second pass voltage. The level of the first pass voltage may be set based on the level of the read voltage.
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5.发明申请METHOD OF PROVIDING AN OPERATING VOLTAGE IN A MEMORY DEVICE AND A MEMORY CONTROLLER FOR THE MEMORY DEVICE 有权在存储器件中提供操作电压的方法和用于存储器件的存储器控制器公开(公告)号：US20140347935A1
公开(公告)日：2014-11-27
申请号：US14458453
申请日：2014-08-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Moo Sung Kim , Woo Ghee Hahn
IPC: G11C16/26
CPC classification number: G11C16/26 , G11C11/5642 , G11C16/0483 , G11C16/10
Abstract: A method of providing an operating voltage in a memory device includes applying a read voltage to a selected word line while applying a first pass voltage to at least one unselected word line among word lines adjacent to the selected word line; and while applying a second pass voltage to the remaining unselected word lines (other than the at least one unselected word line to which the first pass voltage is applied). The level of the first pass voltage is higher than the level of the second pass voltage. The level of the first pass voltage may be set based on the level of the read voltage.
Abstract translation: 一种在存储器件中提供工作电压的方法包括：将一个读取电压施加到所选择的字线上，同时对与所选择的字线相邻的字线中的至少一个未选择的字线施加第一通过电压; 并且在剩余的未选择字线（除了施加了第一通过电压的至少一个未选择的字线之外）施加第二通过电压的同时。 第一通过电压的电平高于第二通过电压的电平。 可以基于读取电压的电平来设置第一通过电压的电平。
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公开(公告)号：US09798656B2
公开(公告)日：2017-10-24
申请号：US14309952
申请日：2014-06-20
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Won Chul Lee , Moo Sung Kim
CPC classification number: G06F12/0246 , G06F3/0604 , G06F3/065 , G06F3/0679 , G06F2003/0697 , G06F2212/7205 , G06F2212/7211
Abstract: A method of operating a memory controller includes; counting a number of read operations directed to a page-group of data stored in a block and generating a first read count number, then comparing the first read count number with a first reference count threshold among a first set of reference count thresholds associated with the page-group, and upon determining that the first read count number exceeds the first reference count threshold, performing a copy-back operation of the page-group data from the block to another block.
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7.发明授权Nonvolatile memory device, system and programming method with dynamic verification mode selection 有权非易失存储器件，具有动态校验模式选择的系统和编程方法公开(公告)号：US09224483B2
公开(公告)日：2015-12-29
申请号：US14595788
申请日：2015-01-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Moo Sung Kim
CPC classification number: G11C16/10 , G11C16/0483 , G11C16/3454 , G11C16/3459
Abstract: Nonvolatile memory devices, memory systems and related methods of operating nonvolatile memory devices are presented. During a programming operation, the nonvolatile memory device is capable of using bit line forcing, and is also capable of selecting a verification mode for use during a verification operation from a group of verification modes on the basis of an evaluated programming condition.
Abstract translation: 介绍了非易失性存储器件，存储器系统和操作非易失性存储器件的相关方法。 在编程操作期间，非易失性存储器件能够使用位线强制，并且还能够基于评估的编程条件从一组验证模式中选择在验证操作期间使用的验证模式。
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8.发明授权Method of providing an operating voltage in a memory device and a memory controller for the memory device 有权在存储器件中提供工作电压的方法和用于存储器件的存储器控制器公开(公告)号：US09129697B2
公开(公告)日：2015-09-08
申请号：US14458453
申请日：2014-08-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Moo Sung Kim , Wook Ghee Hahn
CPC classification number: G11C16/26 , G11C11/5642 , G11C16/0483 , G11C16/10
Abstract: A method of providing an operating voltage in a memory device includes applying a read voltage to a selected word line while applying a first pass voltage to at least one unselected word line among word lines adjacent to the selected word line; and while applying a second pass voltage to the remaining unselected word lines (other than the at least one unselected word line to which the first pass voltage is applied). The level of the first pass voltage is higher than the level of the second pass voltage. The level of the first pass voltage may be set based on the level of the read voltage.
Abstract translation: 一种在存储器件中提供工作电压的方法包括：将一个读取电压施加到所选择的字线上，同时对与所选择的字线相邻的字线中的至少一个未选择的字线施加第一通过电压; 并且在剩余的未选择字线（除了施加了第一通过电压的至少一个未选择的字线之外）施加第二通过电压的同时。 第一通过电压的电平高于第二通过电压的电平。 可以基于读取电压的电平来设置第一通过电压的电平。
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