公开(公告)号：US20230056095A1

公开(公告)日：2023-02-23

申请号：US17734564

申请日：2022-05-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Nam Kyu CHO ,  Sang Gil LEE ,  Seok Hoon KIM ,  Yong Seung KIM ,  Jung Taek KIM ,  Pan Kwi PARK ,  Dong Suk SHIN ,  Si Hyung LEE ,  Yang XU

IPC: H01L29/778 ,  H01L29/78 ,  H01L29/423

Abstract: A semiconductor device includes a substrate including a first region and a second region, a first active pattern on the first region, a first gate structure having a first width in the first direction, on the first active pattern, a first epitaxial pattern disposed in the first active pattern on a side surface of the first gate structure, a second active pattern on the second region, a second gate structure having a second width greater than the first width in the first direction, on the second active pattern and a second epitaxial pattern disposed in the second active pattern on a side surface of the second gate structure. Each of the first epitaxial pattern and the second epitaxial pattern includes silicon germanium (SiGe), and a first Ge concentration of the first epitaxial pattern is lower than a second Ge concentration of the second epitaxial pattern.

公开(公告)号：US20170045049A1

公开(公告)日：2017-02-16

申请号：US15233253

申请日：2016-08-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Hoon PARK ,  Nam Kyu CHO ,  Yang Sun KIM

IPC: F04C18/02 ,  F04C29/06 ,  F04C29/12

Abstract: A compressor includes a discharge guide provided to communicate a discharge port and a bypass port to a discharge cover so that refrigerant discharged from the discharge port and the bypass port is guided to the discharge cover and a middle-pressure chamber formed by the fixed scroll, the back-pressure cover, and the discharge guide. The compressor according to the embodiments guarantees the space in which the bypass valve can be installed by a discharge guide mounted to a discharge portion of the fixed scroll, and at the same time forms the middle pressure portion, resulting in efficiency improvement of the compressor. The compressor according to the embodiments reduces noise and vibration generated from the discharge portion of the fixed scroll by the discharge guide.

Abstract translation: 压缩机包括：排出引导件，其设置成将排出口和旁通端口连通到排出盖，使从排出口排出的制冷剂和旁通口被排出到排出盖;以及由固定涡旋件形成的中压室， 背压盖和排出引导件。 根据实施例的压缩机通过安装在固定涡旋件的排出部分上的排放引导件来保证旁通阀能够安装的空间，同时形成中压部分，从而提高压缩机的效率。 根据实施例的压缩机减少由排出引导件从固定涡旋件的排放部分产生的噪音和振动。

公开(公告)号：US20240194786A1

公开(公告)日：2024-06-13

申请号：US18531898

申请日：2023-12-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong Suk SHIN ,  Jung Taek KIM ,  Hyun-Kwan YU ,  Seok Hoon KIM ,  Pan Kwi PARK ,  Seo Jin JEONG ,  Nam Kyu CHO

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L29/7855 ,  H01L29/0847 ,  H01L29/42392 ,  H01L29/78696 ,  H01L29/66545

Abstract: There is provided a semiconductor device capable of improving performance and reliability of an element. The semiconductor device includes an active pattern extending in a first direction, and a plurality of gate structures spaced apart from each other in the first direction on the active pattern. Each gate structure comprises a gate electrode extending in a second direction and a gate spacer on a sidewall of the gate electrode and a source/drain pattern disposed between adjacent gate structures. The gate structure comprises a semiconductor liner layer and a semiconductor filling layer on the semiconductor liner layer, wherein the semiconductor liner layer and the semiconductor filling layer are formed of silicon-germanium. The semiconductor filling layer comprises an upper portion protruding in a third direction beyond an upper surface of the active pattern. A maximum width of the upper portion of the semiconductor filling layer in the first direction is greater than a width of the semiconductor filling layer in the first direction on the upper surface of the active pattern. The semiconductor liner layer comprises an outer surface in contact with the active pattern and an inner surface facing the semiconductor filling layer. In a plan view, the inner surface of the semiconductor liner layer comprises a concave region.

公开(公告)号：US20240021675A1

公开(公告)日：2024-01-18

申请号：US18125411

申请日：2023-03-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nam Kyu CHO ,  Seok Hoon KIM ,  Jung Taek KIM ,  Pan Kwi PARK ,  Seo Jin JEONG

IPC: H01L29/08 ,  H01L29/06 ,  H01L29/423 ,  H01L29/775

CPC classification number: H01L29/0847 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/775

Abstract: A semiconductor device includes: first and second channel structures spaced apart from each other in a first direction; and a source/drain pattern, between the first and second channel structures, including a first interface contacting the first channel structure and a second interface contacting the second channel structure, wherein, in a plan view, the source/drain pattern includes first and second side walls opposite to each other in a second direction, the first side wall includes a first sloped side wall, a second sloped side wall, and a first horizontal intersection at which the first and second sloped side walls meet, a width of the first interface is different from a width of the second interface, in the second direction, and a distance from the first interface to the first horizontal intersection is greater than a distance from the second interface to the first horizontal intersection, in the first direction.

公开(公告)号：US20240332424A1

公开(公告)日：2024-10-03

申请号：US18740736

申请日：2024-06-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yang XU ,  Nam Kyu CHO ,  Seok Hoon KIM ,  Yong Seung KIM ,  Pan Kwi PARK ,  Dong Suk SHIN ,  Sang Gil LEE ,  Si Hyung LEE

IPC: H01L29/78 ,  H01L27/088 ,  H01L29/06 ,  H01L29/417

CPC classification number: H01L29/7851 ,  H01L27/0886 ,  H01L29/0649 ,  H01L29/41791

Abstract: A semiconductor device including first fin-shaped patterns in a first region of a substrate and spaced apart from each other in a first direction, second fin-shaped patterns in a second region of the substrate and spaced apart from each other in a second direction, a first field insulating film on the substrate and covering sidewalls of the first fin-shaped patterns, a second field insulating film on the substrate and covering sidewalls of the second fin-shaped patterns, a first source/drain pattern on the first field insulating film, connected to the first fin-shaped patterns, and including a first silicon-germanium pattern, and a second source/drain pattern on the second field insulating film, connected to the second fin-shaped patterns, and including a second silicon-germanium pattern, the second source/drain pattern and the second field insulating film defining one or more first air gaps therebetween may be provided.

公开(公告)号：US20230058991A1

公开(公告)日：2023-02-23

申请号：US17690178

申请日：2022-03-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yang XU ,  Nam Kyu CHO ,  Seok Hoon KIM ,  Yong Seung KIM ,  Pan Kwi PARK ,  Dong Suk SHIN ,  Sang Gil LEE ,  Si Hyung LEE

IPC: H01L29/78 ,  H01L27/088 ,  H01L29/417 ,  H01L29/06

Abstract: A semiconductor device including first fin-shaped patterns in a first region of a substrate and spaced apart from each other in a first direction, second fin-shaped patterns in a second region of the substrate and spaced apart from each other in a second direction, a first field insulating film on the substrate and covering sidewalls of the first fin-shaped patterns, a second field insulating film on the substrate and covering sidewalls of the second fin-shaped patterns, a first source/drain pattern on the first field insulating film, connected to the first fin-shaped patterns, and including a first silicon-germanium pattern, and a second source/drain pattern on the second field insulating film, connected to the second fin-shaped patterns, and including a second silicon-germanium pattern, the second source/drain pattern and the second field insulating film defining one or more first air gaps therebetween may be provided.

公开(公告)号：US20210131427A1

公开(公告)日：2021-05-06

申请号：US16643753

申请日：2018-08-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nam Kyu CHO ,  Yang Sun KIM ,  Jung-Hoon PARK ,  Jong Eun LEE

IPC: F04C2/02

Abstract: Disclosed is a scroll compressor capable of preventing reverse flow of refrigerant and reducing flow noise. The scroll compressor efficiently distribute refrigerant suctioned into the scroll compressor to a compression chamber and a drive unit. The scroll compressor includes a main body, a fixed scroll fixedly installed in the main body, an orbiting scroll configured to engage with the fixed scroll and perform a relative orbiting motion, and to form a compression chamber with the fixed scroll, a partition plate disposed above the fixed scroll to separate an inside of the main body into a low-pressure portion and a high-pressure portion, a first check valve installed at a discharge port of the fixed scroll to open and close the discharge port, and a second check valve installed on the partition plate to open and close an opening allowing communication between the low-pressure portion and the high-pressure portion.