SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

    公开(公告)号:US20230056095A1

    公开(公告)日:2023-02-23

    申请号:US17734564

    申请日:2022-05-02

    Abstract: A semiconductor device includes a substrate including a first region and a second region, a first active pattern on the first region, a first gate structure having a first width in the first direction, on the first active pattern, a first epitaxial pattern disposed in the first active pattern on a side surface of the first gate structure, a second active pattern on the second region, a second gate structure having a second width greater than the first width in the first direction, on the second active pattern and a second epitaxial pattern disposed in the second active pattern on a side surface of the second gate structure. Each of the first epitaxial pattern and the second epitaxial pattern includes silicon germanium (SiGe), and a first Ge concentration of the first epitaxial pattern is lower than a second Ge concentration of the second epitaxial pattern.

    SEMICONDUCTOR DEVICE
    2.
    发明公开

    公开(公告)号:US20240332424A1

    公开(公告)日:2024-10-03

    申请号:US18740736

    申请日:2024-06-12

    CPC classification number: H01L29/7851 H01L27/0886 H01L29/0649 H01L29/41791

    Abstract: A semiconductor device including first fin-shaped patterns in a first region of a substrate and spaced apart from each other in a first direction, second fin-shaped patterns in a second region of the substrate and spaced apart from each other in a second direction, a first field insulating film on the substrate and covering sidewalls of the first fin-shaped patterns, a second field insulating film on the substrate and covering sidewalls of the second fin-shaped patterns, a first source/drain pattern on the first field insulating film, connected to the first fin-shaped patterns, and including a first silicon-germanium pattern, and a second source/drain pattern on the second field insulating film, connected to the second fin-shaped patterns, and including a second silicon-germanium pattern, the second source/drain pattern and the second field insulating film defining one or more first air gaps therebetween may be provided.

    SEMICONDUCTOR DEVICE
    3.
    发明申请

    公开(公告)号:US20230058991A1

    公开(公告)日:2023-02-23

    申请号:US17690178

    申请日:2022-03-09

    Abstract: A semiconductor device including first fin-shaped patterns in a first region of a substrate and spaced apart from each other in a first direction, second fin-shaped patterns in a second region of the substrate and spaced apart from each other in a second direction, a first field insulating film on the substrate and covering sidewalls of the first fin-shaped patterns, a second field insulating film on the substrate and covering sidewalls of the second fin-shaped patterns, a first source/drain pattern on the first field insulating film, connected to the first fin-shaped patterns, and including a first silicon-germanium pattern, and a second source/drain pattern on the second field insulating film, connected to the second fin-shaped patterns, and including a second silicon-germanium pattern, the second source/drain pattern and the second field insulating film defining one or more first air gaps therebetween may be provided.

    SEMICONDUCTOR DEVICE
    4.
    发明申请

    公开(公告)号:US20220181498A1

    公开(公告)日:2022-06-09

    申请号:US17391342

    申请日:2021-08-02

    Abstract: There is provided a semiconductor device comprising an active pattern, including a lower pattern extending in a first direction, and a plurality of sheet patterns spaced apart from the lower pattern in a second direction perpendicular to the first direction, a plurality of gate structures on the lower pattern to be spaced apart from each other in the first direction and including a gate electrode and a gate insulating film wrapping the plurality of sheet patterns, a source/drain recess defined between the gate structures adjacent to each other, and a source/drain pattern inside the source/drain recess and including a semiconductor blocking film formed continuously along the source/drain recess, wherein the source/drain recesses include a plurality of width extension regions, and a width of each of the width extension regions in the first direction increases and then decreases, as it goes away from an upper surface of the lower pattern.

    SEMICONDUCTOR DEVICE
    5.
    发明公开

    公开(公告)号:US20240038840A1

    公开(公告)日:2024-02-01

    申请号:US18125870

    申请日:2023-03-24

    Abstract: A semiconductor device includes an active pattern with a first impurity having a first conductivity, first and second nanosheets on the active pattern, a gate electrode on the active pattern and surrounding each of the first and second nanosheets, a lower source/drain region on the active pattern, an uppermost surface of the lower source/drain region being lower than a lower surface of the second nanosheet, and the lower source/drain region being doped with a second impurity having the first conductivity, an upper source/drain region on the lower source/drain region, the upper source/drain region being doped with a third impurity having a second conductivity different from the first conductivity, and a gate insulation layer between the gate electrode and the lower and upper source/drain regions, the gate insulation layer being in contact with each of the lower and upper source/drain regions.

    SEMICONDUCTOR DEVICE
    7.
    发明申请

    公开(公告)号:US20220190134A1

    公开(公告)日:2022-06-16

    申请号:US17460446

    申请日:2021-08-30

    Abstract: A semiconductor device includes an active pattern including a lower pattern and a plurality of sheet patterns; a gate structure disposed on the lower pattern and surrounding the plurality of sheet patterns; and a source/drain pattern filling a source/drain recess formed on one side of the gate structure. The source/drain pattern includes a first semiconductor pattern extending along the source/drain recess and contacting the lower pattern, a second and third semiconductor patterns sequentially disposed on the first semiconductor pattern, a lower surface of the third semiconductor pattern is disposed below a lower surface of a lowermost sheet pattern, a side surface of the third semiconductor pattern includes a planar portion, and a thickness of the second semiconductor pattern on the lower surface of the third semiconductor pattern is different from a thickness of the second semiconductor pattern on the planar portion of the side surface of the third semiconductor pattern.

    SEMICONDUCTOR DEVICE
    8.
    发明公开

    公开(公告)号:US20240297234A1

    公开(公告)日:2024-09-05

    申请号:US18661171

    申请日:2024-05-10

    Abstract: A semiconductor device includes an active pattern including a lower pattern and a plurality of sheet patterns; a gate structure disposed on the lower pattern and surrounding the plurality of sheet patterns; and a source/drain pattern filling a source/drain recess formed on one side of the gate structure. The source/drain pattern includes a first semiconductor pattern extending along the source/drain recess and contacting the lower pattern, a second and third semiconductor patterns sequentially disposed on the first semiconductor pattern, a lower surface of the third semiconductor pattern is disposed below a lower surface of a lowermost sheet pattern, a side surface of the third semiconductor pattern includes a planar portion, and a thickness of the second semiconductor pattern on the lower surface of the third semiconductor pattern is different from a thickness of the second semiconductor pattern on the planar portion of the side surface of the third semiconductor pattern.

    SEMICONDUCTOR DEVICE
    9.
    发明公开

    公开(公告)号:US20240194786A1

    公开(公告)日:2024-06-13

    申请号:US18531898

    申请日:2023-12-07

    Abstract: There is provided a semiconductor device capable of improving performance and reliability of an element. The semiconductor device includes an active pattern extending in a first direction, and a plurality of gate structures spaced apart from each other in the first direction on the active pattern. Each gate structure comprises a gate electrode extending in a second direction and a gate spacer on a sidewall of the gate electrode and a source/drain pattern disposed between adjacent gate structures. The gate structure comprises a semiconductor liner layer and a semiconductor filling layer on the semiconductor liner layer, wherein the semiconductor liner layer and the semiconductor filling layer are formed of silicon-germanium. The semiconductor filling layer comprises an upper portion protruding in a third direction beyond an upper surface of the active pattern. A maximum width of the upper portion of the semiconductor filling layer in the first direction is greater than a width of the semiconductor filling layer in the first direction on the upper surface of the active pattern. The semiconductor liner layer comprises an outer surface in contact with the active pattern and an inner surface facing the semiconductor filling layer. In a plan view, the inner surface of the semiconductor liner layer comprises a concave region.

    SEMICONDUCTOR DEVICE
    10.
    发明公开

    公开(公告)号:US20240021675A1

    公开(公告)日:2024-01-18

    申请号:US18125411

    申请日:2023-03-23

    CPC classification number: H01L29/0847 H01L29/0673 H01L29/42392 H01L29/775

    Abstract: A semiconductor device includes: first and second channel structures spaced apart from each other in a first direction; and a source/drain pattern, between the first and second channel structures, including a first interface contacting the first channel structure and a second interface contacting the second channel structure, wherein, in a plan view, the source/drain pattern includes first and second side walls opposite to each other in a second direction, the first side wall includes a first sloped side wall, a second sloped side wall, and a first horizontal intersection at which the first and second sloped side walls meet, a width of the first interface is different from a width of the second interface, in the second direction, and a distance from the first interface to the first horizontal intersection is greater than a distance from the second interface to the first horizontal intersection, in the first direction.

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