公开(公告)号：US20190051353A1

公开(公告)日：2019-02-14

申请号：US16161285

申请日：2018-10-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun-chu OH ,  Pil-sang Yoon ,  Jun-jin Kong ,  Hong-rak Son

IPC: G11C13/00 ,  H03M13/27 ,  H03M13/05 ,  G06F12/00 ,  G11C8/06 ,  G06F11/10

CPC classification number: G11C13/0069 ,  G06F11/1048 ,  G06F12/00 ,  G06F12/0238 ,  G06F2212/7201 ,  G06F2212/7202 ,  G11C8/06 ,  G11C13/0004 ,  G11C13/0023 ,  G11C13/004 ,  G11C2013/0088 ,  G11C2213/71 ,  G11C2213/72 ,  H03M13/05 ,  H03M13/27

Abstract: A method of operating a resistive memory system including a plurality of layers may include receiving a write request and first data corresponding to a first address, converting the first address into a second address and assigning n (n is an integer equal to or larger than 2) pieces of sub-region data generated from the first data to the plurality of layers, and writing the n pieces of sub-region data to at least two layers according to the second address.

公开(公告)号：US10748642B2

公开(公告)日：2020-08-18

申请号：US16299348

申请日：2019-03-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwang-hoon Kim ,  Jun-jin Kong ,  Hong-rak Son ,  Pil-sang Yoon

IPC: G11C7/06 ,  G11C16/26 ,  G11C29/50 ,  G11C11/56 ,  G11C16/34 ,  G11C29/02 ,  G11C29/04

Abstract: A method of setting a read voltage by a memory controller and a storage device are provided. The method includes controlling a memory device to read data from memory cells by applying a test read voltage to a selected word line; receiving, from the memory device, cell count information corresponding to a read operation of the memory device, and renewing the test read voltage by using the cell count information and a cost function to find an optimum read voltage, the cost function being determined for each read voltage level; and determining a read voltage by performing the controlling of the memory device and the renewing of the test read voltage at least once.

公开(公告)号：US10741245B2

公开(公告)日：2020-08-11

申请号：US16161285

申请日：2018-10-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun-chu Oh ,  Pil-sang Yoon ,  Jun-jin Kong ,  Hong-rak Son

IPC: G11C13/00 ,  H03M13/05 ,  H03M13/27 ,  G06F12/00 ,  G11C8/06 ,  G06F11/10 ,  G06F12/02

Abstract: A method of operating a resistive memory system including a plurality of layers may include receiving a write request and first data corresponding to a first address, converting the first address into a second address and assigning n (n is an integer equal to or larger than 2) pieces of sub-region data generated from the first data to the plurality of layers, and writing the n pieces of sub-region data to at least two layers according to the second address.