公开(公告)号：US20200279176A1

公开(公告)日：2020-09-03

申请号：US16448842

申请日：2019-06-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ryan M. HATCHER ,  Titash RAKSHIT ,  Jorge KITTL ,  Rwik SENGUPTA ,  Dharmendar PALLE ,  Joon Goo HONG

IPC: G06N5/04 ,  G11C11/16 ,  G11C13/00 ,  G11C11/22 ,  G06F17/16

Abstract: A weight cell and device are herein disclosed. The weight cell includes a first field effect transistor (FET) and a first resistive memory element connected to a drain of the first FET, a second FET and a second resistive memory element connected to a drain of the second FET, the drain of the first FET being connected to a gate of the second FET and the drain of the second FET is connected to a gate of the first FET, a third FET and a third resistive memory element connected to a drain of the third FET, and a fourth FET and a fourth resistive memory element connected to a drain of the fourth FET, the drain of the third FET is connected to a gate of the fourth FET and the drain of the fourth FET being connected to a gate of the third FET.

公开(公告)号：US20200265892A1

公开(公告)日：2020-08-20

申请号：US16448799

申请日：2019-06-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ryan M. HATCHER ,  Titash Rakshit ,  Jorge Kittl ,  Rwik Sengupta ,  Dharmendar Palle ,  Joon Goo Hong

IPC: G11C13/00 ,  G11C11/22 ,  G11C11/16

Abstract: A weight cell and device are herein disclosed. The weight cell includes a first field effect transistor (FET) and a first resistive memory element connected to a drain of the first FET, and a second FET and a second resistive memory element connected to a drain of the second FET. The drain of the first FET is connected to a gate of the second FET and the drain of the second FET is connected to a gate of the first FET.