-
公开(公告)号：US20230281792A1
公开(公告)日：2023-09-07
申请号：US18060260
申请日：2022-11-30
发明人： Sooryong LEE , Jaewon YANG , Kyoung Cho NA , Jihong KIM , Sang Chul YEO , Hyeok LEE
IPC分类号： G06T7/00 , G06T11/00 , G06T3/40 , G06F30/392
CPC分类号： G06T7/001 , G06T11/00 , G06T3/40 , G06F30/392 , G06T2207/30148 , G06T2207/20081
摘要： Disclosed is an operating method of an electronic device which includes a processor executing a semiconductor layout simulation module based on machine learning. The operating method includes receiving, at the semiconductor layout simulation module executed by the processor, a layout image, inferring a wafer image based on the layout image and a fabrication device information image of a semiconductor fabrication device fabricating a semiconductor integrated circuit based on a final layout image, adjusting the layout image when the wafer image is not acceptable, and confirming the layout image as the final layout image when the wafer image is acceptable.
-
2.发明公开公开(公告)号：US20240353748A1
公开(公告)日：2024-10-24
申请号：US18407673
申请日：2024-01-09
发明人： Sang Chul YEO
CPC分类号： G03F1/36 , G03F1/70 , G03F1/86 , G03F7/70441
摘要： A method for correcting an optical proximity correction (OPC) model is provided. The method comprises measuring a first target CD value at a first measurement point of an SEM image for a target pattern and measuring a second target CD value at a second measurement point, simulating the OPC model by using the first target CD value with respect to a first evaluation point corresponding to the first measurement point on a contour of the OPC model for the target pattern, simulating the OPC model by using the second target CD value with respect to a second evaluation point corresponding to the second measurement point on the contour, and fitting the OPC model with respect to each of the first evaluation point and the second evaluation point.
-
3.发明申请公开(公告)号：US20200342071A1
公开(公告)日：2020-10-29
申请号：US16693903
申请日：2019-11-25
发明人： Sang Chul YEO
IPC分类号： G06F17/50 , H01L21/027 , H01L21/265 , H01L21/266 , G03F1/36
摘要： A method for manufacturing a semiconductor device includes performing an optical proximity correction (OPC) process on a designed layout based on a final model signal obtained according to an OPC modeling process to generate a corrected layout, the OPC modeling process including, selecting a transmittance value of a sub-layout pattern of a sub-layout included in a target layout, the transmittance value being a parameter of an OPC model and representing an intensity of light that transmits through a photomask, and generating a final model signal based on the transmittance value of the sub-layout pattern, and forming a photoresist pattern on a substrate using the photomask generated based on the corrected layout.
-
公开(公告)号：US20230062677A1
公开(公告)日：2023-03-02
申请号：US17735593
申请日：2022-05-03
发明人： Sang Chul YEO , Min-Cheol KANG , Sooryong LEE
摘要： Disclosed are a method of forming an optical proximity correction (OPC) model and/or a method of fabricating a semiconductor device using the same. The method of forming the OPC model may include obtaining a scanning electron microscope (SEM) image, which is an average image of a plurality of images taken using one or more scanning electron microscopes, and a graphic data system (GDS) image, which is obtained by imaging a designed layout, aligning the SEM image and the GDS image, performing an image filtering process on the SEM image, extracting a contour from the SEM image, and verifying the contour. The verifying of the contour may be performed using a genetic algorithm. Variables in the genetic algorithm may include first parameters related to the image alignment process, second parameters related to the image filtering process, and third parameters related to a critical dimension (CD) measurement process.
-
-
-
搜索结果
4 条记录 (耗时 0.016 秒)
