公开(公告)号：US20190087263A1

公开(公告)日：2019-03-21

申请号：US15925111

申请日：2018-03-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-uhn Cha ,  In-woo Jun

IPC: G06F11/10

CPC classification number: G06F11/1048 ,  G06F11/1044 ,  G06F11/1072

Abstract: A memory device is configured to perform a parallel read-modify-write operation, which generates a syndrome for first partial data read from a memory cell array and second partial data according to a data mask option, corrects an error of the second partial data, generates merged data by combining second data with the corrected second partial data, and generates an internal parity for the merged data. The memory device sets the second partial data to binary values of 0, generates third data by combining the second partial data set to the binary values of 0 with the second data, generates a third parity for the third data, and generates an internal parity for the merged data based on the syndrome, a partial parity, and the third parity.

公开(公告)号：US10127974B2

公开(公告)日：2018-11-13

申请号：US15909220

申请日：2018-03-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-Joong Kim ,  Ho-young Song ,  Hoi-ju Chung ,  Ju-yun Jung ,  Sang-uhn Cha

IPC: G11C7/00 ,  G11C11/4096 ,  G06F3/06 ,  G11C7/10 ,  G11C11/406 ,  G11C29/02 ,  G11C29/04 ,  G11C29/52 ,  G11C29/50 ,  G11C29/12

Abstract: Provided are a memory device and a memory system performing request-based refresh, and an operating method of the memory device. The operating method includes: determining a weak row by counting an activated number of at least one row; requesting for refresh on the weak row based on a result of the determining; and performing target refresh on the weak row upon receiving a refresh command according to the requesting.

公开(公告)号：US10521293B2

公开(公告)日：2019-12-31

申请号：US15925111

申请日：2018-03-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-uhn Cha ,  In-woo Jun

IPC: G06F11/10

Abstract: A memory device is configured to perform a parallel read-modify-write operation, which generates a syndrome for first partial data read from a memory cell array and second partial data according to a data mask option, corrects an error of the second partial data, generates merged data by combining second data with the corrected second partial data, and generates an internal parity for the merged data. The memory device sets the second partial data to binary values of 0, generates third data by combining the second partial data set to the binary values of 0 with the second data, generates a third parity for the third data, and generates an internal parity for the merged data based on the syndrome, a partial parity, and the third parity.

公开(公告)号：US09940991B2

公开(公告)日：2018-04-10

申请号：US15343977

申请日：2016-11-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-Joong Kim ,  Ho-young Song ,  Hoi-ju Chung ,  Ju-yun Jung ,  Sang-uhn Cha

IPC: G11C7/00 ,  G11C11/4096 ,  G06F3/06 ,  G11C7/10 ,  G11C11/406 ,  G11C29/02 ,  G11C29/04 ,  G11C29/52 ,  G11C29/50 ,  G11C29/12

CPC classification number: G11C11/4096 ,  G06F3/0619 ,  G06F3/0659 ,  G06F3/0673 ,  G11C7/1063 ,  G11C11/40611 ,  G11C11/40622 ,  G11C29/025 ,  G11C29/028 ,  G11C29/04 ,  G11C29/50016 ,  G11C29/52 ,  G11C2029/0403 ,  G11C2029/0409 ,  G11C2029/1202 ,  G11C2029/5002 ,  G11C2211/4068

Abstract: Provided are a memory device and a memory system performing request-based refresh, and an operating method of the memory device. The operating method includes: determining a weak row by counting an activated number of at least one row; requesting for refresh on the weak row based on a result of the determining; and performing target refresh on the weak row upon receiving a refresh command according to the requesting.