公开(公告)号：US20160284397A1

公开(公告)日：2016-09-29

申请号：US15176964

申请日：2016-06-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungryun KIM ,  Sangyong YOON

IPC: G11C11/56 ,  G11C16/16 ,  G11C16/30 ,  G11C16/10

CPC classification number: G11C11/5628 ,  G06F12/0246 ,  G06F12/10 ,  G06F2212/7201 ,  G11C11/5642 ,  G11C16/10 ,  G11C16/16 ,  G11C16/30

Abstract: A program method of a storage device which includes at least one nonvolatile memory device and a memory controller to control the at least one nonvolatile memory device, the program method comprising: performing a first normal program operation to store first user data in a memory block; detecting, at the memory controller, a first event; performing a dummy program operation to store dummy data in at least one page of the memory block in response to the detection of the first event; and performing a second normal program operation to store second user data in the memory block after the dummy program operation, dummy program operations being operations in which random data is programmed into the memory block, normal program operations being operations in which data other than random data is programmed in the memory block.

公开(公告)号：US20130223143A1

公开(公告)日：2013-08-29

申请号：US13721859

申请日：2012-12-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yongsung CHO ,  Kihwan CHOI ,  Il Han PARK ,  KIiwhan SONG ,  Sangyong YOON

IPC: G11C7/04

CPC classification number: G11C7/04 ,  G11C16/0483 ,  G11C16/10

Abstract: A method of programming a nonvolatile memory device comprises determining a temperature condition of the nonvolatile memory device, determining a program pulse period according to the temperature condition, supplying a program voltage to a selected word line using the program pulse period, and supplying a pass voltage to unselected word lines while supplying the program voltage to the selected word line.

Abstract translation: 非易失性存储器件的编程方法包括：确定非易失性存储器件的温度状态，根据温度条件确定编程脉冲周期，使用编程脉冲周期向选定字线提供编程电压，并提供通过电压 在将程序电压提供给所选择的字线的同时，将其作为未选择的字线。