公开(公告)号：US20200136020A1

公开(公告)日：2020-04-30

申请号：US16727986

申请日：2019-12-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong-Sung PARK ,  Woo-Jin KIM ,  Jeong-Heon PARK ,  Se-Chung OH ,  Joon-Myoung LEE ,  Hyun CHO

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/12 ,  H01L43/10

Abstract: The methods of manufacturing an MRAM device and MRAM devices are provided. The methods may include forming a first electrode on an upper surface of a substrate, forming a first magnetic layer on the first electrode, forming a tunnel barrier structure on the first magnetic layer, forming a second magnetic layer on the tunnel barrier structure, and forming a second electrode on the second magnetic layer. The tunnel barrier structure may include a first tunnel barrier layer and a second tunnel barrier layer that are sequentially stacked on the first magnetic layer and may have different resistivity distributions from each other along a horizontal direction that may be parallel to the upper surface of the substrate.

公开(公告)号：US20200255934A1

公开(公告)日：2020-08-13

申请号：US16862791

申请日：2020-04-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joon-Myoung LEE ,  Yong-Sung PARK ,  Whan-Kyun KIM ,  Se-Chung OH ,  Young-Man JANG

IPC: C23C14/34 ,  H01J37/32 ,  C23C16/455

Abstract: A substrate processing apparatus including a chamber accommodating a substrate; a substrate support in the chamber, the substrate support supporting the substrate; a gas injector to inject an oxidizing gas for oxidizing a metal layer to be disposed on the substrate; a cooler under the substrate to cool the substrate; a target mount disposed on the substrate, the target mount including a target for performing a sputtering process; and a blocker between the target and the gas injector, the blocker shielding the target from the oxidizing gas injected from the gas injector.

公开(公告)号：US20190148632A1

公开(公告)日：2019-05-16

申请号：US16122056

申请日：2018-09-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Min LEE ,  Ju-Hyun KIM ,  Jung-Hwan PARK ,  Se-Chung OH ,  Dong-Kyu LEE ,  Kyung-Il HONG

IPC: H01L43/12 ,  H01L43/08 ,  H01L43/10 ,  H01L43/02 ,  H01L27/22

Abstract: In a method of manufacturing a variable resistance memory device, an MTJ structure layer is formed on a substrate. The MTJ structure layer is etched in an etching chamber to form an MTJ structure. The substrate having the MTJ structure thereon is transferred to a deposition chamber through a transfer chamber. A protection layer covering a sidewall of the MTJ structure is formed in the deposition chamber. The etching chamber, the transfer chamber, and the deposition chamber are kept in a high vacuum state equal to or more than about 10−8 Torr.

公开(公告)号：US20190097124A1

公开(公告)日：2019-03-28

申请号：US16101243

申请日：2018-08-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joon-Myoung LEE ,  Ju-Hyun KIM ,  Jung-Hwan PARK ,  Se-Chung OH ,  Young-Man JANG

IPC: H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  H01L27/22

Abstract: An MRAM device includes a lower electrode, a blocking pattern on the lower electrode and including a binary metal boride in an amorphous state, a seed pattern on the blocking pattern and including a metal, an MTJ structure on the seed pattern, and an upper electrode on the MTJ structure.