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公开(公告)号:US20200136020A1
公开(公告)日:2020-04-30
申请号:US16727986
申请日:2019-12-27
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yong-Sung PARK , Woo-Jin KIM , Jeong-Heon PARK , Se-Chung OH , Joon-Myoung LEE , Hyun CHO
Abstract: The methods of manufacturing an MRAM device and MRAM devices are provided. The methods may include forming a first electrode on an upper surface of a substrate, forming a first magnetic layer on the first electrode, forming a tunnel barrier structure on the first magnetic layer, forming a second magnetic layer on the tunnel barrier structure, and forming a second electrode on the second magnetic layer. The tunnel barrier structure may include a first tunnel barrier layer and a second tunnel barrier layer that are sequentially stacked on the first magnetic layer and may have different resistivity distributions from each other along a horizontal direction that may be parallel to the upper surface of the substrate.
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公开(公告)号:US20200255934A1
公开(公告)日:2020-08-13
申请号:US16862791
申请日:2020-04-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Joon-Myoung LEE , Yong-Sung PARK , Whan-Kyun KIM , Se-Chung OH , Young-Man JANG
IPC: C23C14/34 , H01J37/32 , C23C16/455
Abstract: A substrate processing apparatus including a chamber accommodating a substrate; a substrate support in the chamber, the substrate support supporting the substrate; a gas injector to inject an oxidizing gas for oxidizing a metal layer to be disposed on the substrate; a cooler under the substrate to cool the substrate; a target mount disposed on the substrate, the target mount including a target for performing a sputtering process; and a blocker between the target and the gas injector, the blocker shielding the target from the oxidizing gas injected from the gas injector.
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公开(公告)号:US20190148632A1
公开(公告)日:2019-05-16
申请号:US16122056
申请日:2018-09-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jung-Min LEE , Ju-Hyun KIM , Jung-Hwan PARK , Se-Chung OH , Dong-Kyu LEE , Kyung-Il HONG
Abstract: In a method of manufacturing a variable resistance memory device, an MTJ structure layer is formed on a substrate. The MTJ structure layer is etched in an etching chamber to form an MTJ structure. The substrate having the MTJ structure thereon is transferred to a deposition chamber through a transfer chamber. A protection layer covering a sidewall of the MTJ structure is formed in the deposition chamber. The etching chamber, the transfer chamber, and the deposition chamber are kept in a high vacuum state equal to or more than about 10−8 Torr.
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公开(公告)号:US20190097124A1
公开(公告)日:2019-03-28
申请号:US16101243
申请日:2018-08-10
Applicant: Samsung Electronics Co., Ltd.
Inventor: Joon-Myoung LEE , Ju-Hyun KIM , Jung-Hwan PARK , Se-Chung OH , Young-Man JANG
Abstract: An MRAM device includes a lower electrode, a blocking pattern on the lower electrode and including a binary metal boride in an amorphous state, a seed pattern on the blocking pattern and including a metal, an MTJ structure on the seed pattern, and an upper electrode on the MTJ structure.
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