公开(公告)号：US20220149114A1

公开(公告)日：2022-05-12

申请号：US17362075

申请日：2021-06-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kiyeon YANG ,  Bonwon KOO ,  Segab KWON ,  Chungman KIM ,  Yongyoung PARK ,  Dongho AHN ,  Seunggeun YU ,  Changseung LEE

IPC: H01L27/24 ,  H01L45/00 ,  H01L29/24

Abstract: Provided are a chalcogen compound having ovonic threshold switching characteristics, and a switching device, a semiconductor device, and/or a semiconductor apparatus which include the chalcogen compound. The chalcogen compound includes five or more elements and may have stable switching characteristics with a low off-current value (leakage current value). The chalcogen compound includes: selenium (Se) and tellurium (Te); a first element comprising at least one of indium (In), aluminum (Al), strontium (Sr), and calcium (Ca); and a second element including germanium (Ge) and/or tin (Sn), and may further include at least one of arsenic (As), antimony (Sb), and bismuth (Bi).

公开(公告)号：US20230091136A1

公开(公告)日：2023-03-23

申请号：US17835508

申请日：2022-06-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kiyeon YANG ,  Segab KWON ,  Hajun SUNG ,  Dongho AHN ,  Changseung LEE

IPC: H01L45/00 ,  H01L27/24

Abstract: Provided are a chalcogenide-based material, and a switching element and a memory device that include the same. The chalcogenide-based material includes: a chalcogenide material and a dopant. The chalcogenide material includes Ge, Sb, and Se. The dopant includes at least one metal or metalloid element selected from In, Al, Sr, and Si, an oxide of the metal or metalloid element, or a nitride of the metal or metalloid element.

公开(公告)号：US20220069011A1

公开(公告)日：2022-03-03

申请号：US17209660

申请日：2021-03-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongho AHN ,  Segab KWON ,  Chungman KIM ,  Kwangmin PARK ,  Zhe WU ,  Seunggeun YU ,  Wonjun LEE ,  Jabin LEE ,  Jinwoo LEE

IPC: H01L27/24 ,  H01L45/00

Abstract: A semiconductor device includes a semiconductor substrate, a peripheral device on the semiconductor substrate, a lower insulating structure on the semiconductor substrate and covering the peripheral device, a first conductive line on the lower insulating structure, a memory cell structure on the first conductive line, and a second conductive line on the memory cell structure. The memory cell structure may include an information storage material pattern and a selector material pattern on the lower insulating structure in a vertical direction. The selector material pattern may include a first selector material layer including a first material and a second selector material layer including a second material. The second selector material layer may have a threshold voltage drift higher than that of the first material. The second selector material layer may have a second width narrower than a first width of the first selector material layer.

公开(公告)号：US20230088249A1

公开(公告)日：2023-03-23

申请号：US17717611

申请日：2022-04-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wooyoung YANG ,  Segab KWON ,  Hajun SUNG ,  Dongho AHN ,  Changseung LEE ,  Minwoo CHOI

IPC: H01L45/00 ,  H01L27/24

Abstract: Provided are a semiconductor device and a semiconductor apparatus. The semiconductor device may include a first electrode; a second electrode spaced apart from the first electrode; and a selection device layer including a chalcogen compound layer between the first electrode and the second electrode and a metal oxide doped in the chalcogen compound layer. In the semiconductor device, by doping the metal oxide, an off-current value (leakage current value) of the selection device layer may be reduced, and static switching characteristics may be implemented.

公开(公告)号：US20220406842A1

公开(公告)日：2022-12-22

申请号：US17523363

申请日：2021-11-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hajun SUNG ,  Bonwon KOO ,  Segab KWON ,  Yongyoung PARK ,  Dongho AHN ,  Kiyeon YANG ,  Wooyoung YANG ,  Changseung LEE ,  Minwoo CHOI

IPC: H01L27/24 ,  H01L27/22 ,  C01B19/00

Abstract: Provided are a chalcogenide material, and a device and a memory device each including the same. The chalcogenide material may include: germanium (Ge) as a first component; arsenic (As) as a second component; at least one element selected from selenium (Se) and tellurium (Te) as a third component; and at least one element selected from the elements of Groups 2, 16, and 17 of the periodic table as a fourth component, wherein a content of the first component may be from 5 at % to 30 at %, a content of the second component may be from 20 at % to 40 at %, a content of the third component may be from 25 at % to 75 at %, and a content of the fourth component may be from 0.5 at % to 5 at %.