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公开(公告)号：US20190305049A1
公开(公告)日：2019-10-03
申请号：US16105259
申请日：2018-08-20
发明人： Kyungbae PARK , Wenxu XIANYU , Bonwon KOO , Takkyun RO , Changseung LEE
IPC分类号： H01L27/30 , H01L51/44 , H01L27/146
摘要： Provided are an image sensor and a method of manufacturing the same. The image sensor may include a plurality of light detection elements arranged to correspond to a plurality of pixel regions, a color filter layer on the plurality of light detection elements and including a plurality of color filters arranged to correspond to the plurality of light detection elements, and a photodiode device portion on the color filter layer. The photodiode device portion may have curved structures. The photodiode device portion may include an organic material-based photodiode layer, a first electrode between the photodiode layer and the color filter layer, and a second electrode on the photodiode layer. The photodiode device portion may have curved convex structures respectively corresponding to the plurality of color filters.
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2.发明申请ELECTRO-CHROMIC PANEL CAPABLE OF SELECTIVELY MAKING TRANSPARENT AREA AND REFLECTIVE AREA AND METHOD OF OPERATING THE SAME, AND DISPLAY APPARATUS INCLUDING THE SAME AND METHOD OF OPERATING DISPLAY APPARATUS 审中-公开具有选择性地形成透明区域和反射区域的电泳面板及其操作方法，以及包括其的显示装置和操作显示装置的方法公开(公告)号：US20160026060A1
公开(公告)日：2016-01-28
申请号：US14633781
申请日：2015-02-27
发明人： Bonwon KOO , Deukseok CHUNG , Hyunjoon KIM , Shanghyeun PARK , Changsoo LEE , Taewon JEONG
IPC分类号： G02F1/163 , G09G3/38 , G06F3/041 , G02F1/1333
CPC分类号： G02F1/163 , G02F1/13318 , G02F1/13338 , G02F2001/1635 , G06F3/0412 , G09G3/38 , G09G2310/08 , G09G2354/00
摘要： An electro-chromic panel includes a detection layer, and an electro-chromic layer configured to switch an operational mode of a selected area according to a signal provided from the detection layer. A method of operating an electro-chromic panel includes detecting a first signal provided to a detection layer, and switching an operational mode of a first area of an electro-chromic layer according to the first signal provided from the detection layer.
摘要翻译： 电铬面板包括检测层和电色层，其被配置为根据从检测层提供的信号切换所选区域的操作模式。 操作电铬面板的方法包括检测提供给检测层的第一信号，以及根据从检测层提供的第一信号切换电致密层的第一区域的操作模式。
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公开(公告)号：US20240324246A1
公开(公告)日：2024-09-26
申请号：US18594355
申请日：2024-03-04
发明人： Kiyeon YANG , Donggeon GU , Bonwon KOO , Jeonghee PARK , Hajun SUNG , Dongho AHN , Zhe WU , Changseung LEE , Minwoo CHOI
CPC分类号： H10B63/24 , H10B63/84 , H10N70/841 , H10N70/8825 , H10N70/8828
摘要： Provided are a self-selecting memory device having polarity dependent threshold voltage shift characteristics and/or a memory apparatus including the self-selecting memory device. The memory device includes a first electrode, a second electrode apart from and facing the first electrode, and a memory layer between the first electrode and the second electrode. The memory layer has Ovonic threshold switching characteristics and is configured to have a threshold voltage of the memory layer be changed as a density of active traps in the memory layer is changed, the threshold voltage changing according to the polarity and the intensity of a bias voltage applied to the memory layer. Furthermore, an element composition distribution is configured to be maintained constant in the memory layer in response to the threshold voltage of the memory layer changing.
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4.发明公开公开(公告)号：US20240032308A1
公开(公告)日：2024-01-25
申请号：US18478776
申请日：2023-09-29
发明人： Wooyoung YANG , Bonwon KOO , Chungman KIM , Kwangmin PARK , Hajun SUNG , Dongho AHN , Changseung LEE , Minwoo CHOI
CPC分类号： H10B63/24 , G11C13/0004 , H10B61/10 , H10B63/84 , H10N50/01 , H10N50/80 , H10N70/24 , H10N70/25 , H10N70/063 , H10N70/231 , H10N70/8413 , H10N70/8825 , H10N70/8828 , H10N70/8833 , H10N70/8836
摘要： A chalcogen compound layer exhibiting ovonic threshold switching characteristics, a switching device, a semiconductor device, and/or a semiconductor apparatus including the same are provided. The switching device and/or the semiconductor device may include two or more chalcogen compound layers having different energy band gaps. Alternatively, the switching device and/or semiconductor device may include a chalcogen compound layer having a concentration gradient of an element of boron (B), aluminum (Al), scandium (Sc), manganese (Mn), strontium (Sr), and/or indium (In) in a thickness direction thereof. The switching device and/or a semiconductor device may exhibit stable switching characteristics while having a low off-current value (leakage current value).
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公开(公告)号：US20220406844A1
公开(公告)日：2022-12-22
申请号：US17568866
申请日：2022-01-05
发明人： Chungman KIM , Bonwon KOO , Dongho AHN , Kiyeon YANG , Zhe WU , Chang Seung LEE
摘要： A resistive memory device including a resistive memory pattern; and a selection element pattern electrically connected to the resistive memory pattern, the selection element pattern including a chalcogenide switching material and at least one metallic material, the chalcogenide switching material including germanium, arsenic, and selenium, and the at least one metallic material including aluminum, strontium, or indium, wherein the selection element pattern includes an inhomogeneous material layer in which content of the at least one metallic material in the selection element pattern is variable according to a position within the selection element pattern.
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公开(公告)号：US20220149114A1
公开(公告)日：2022-05-12
申请号：US17362075
申请日：2021-06-29
发明人： Kiyeon YANG , Bonwon KOO , Segab KWON , Chungman KIM , Yongyoung PARK , Dongho AHN , Seunggeun YU , Changseung LEE
摘要： Provided are a chalcogen compound having ovonic threshold switching characteristics, and a switching device, a semiconductor device, and/or a semiconductor apparatus which include the chalcogen compound. The chalcogen compound includes five or more elements and may have stable switching characteristics with a low off-current value (leakage current value). The chalcogen compound includes: selenium (Se) and tellurium (Te); a first element comprising at least one of indium (In), aluminum (Al), strontium (Sr), and calcium (Ca); and a second element including germanium (Ge) and/or tin (Sn), and may further include at least one of arsenic (As), antimony (Sb), and bismuth (Bi).
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7.发明申请公开(公告)号：US20190087044A1
公开(公告)日：2019-03-21
申请号：US16134471
申请日：2018-09-18
发明人： Eunhyoung CHO , Bonwon KOO , Hyunjoon KIM , Haesung KIM , Jungyun WON
CPC分类号： G06F3/0412 , G06F3/044 , G06K9/0002 , H01L27/323 , H01L27/3234 , H01L27/3244
摘要： Provided are a pattern structure for preventing a moiré pattern from becoming visible, and a display apparatus using the same. The pattern structure includes a first element pattern including a plurality of first elements arranged regularly at a first pitch; a second element pattern including a plurality of second elements arranged regularly at a second pitch, the second element pattern being provided on the first element pattern; and a filling layer configured to fill gaps among the plurality of second elements, between adjacent ones thereof. A difference between transmittances of the second element and the filling layer is about 5% or less and thus, a moiré pattern occurring due to the overlapping of the first element pattern and the second element pattern may be prevented from becoming visible.
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公开(公告)号：US20230042262A1
公开(公告)日：2023-02-09
申请号：US17522197
申请日：2021-11-09
发明人： Minwoo CHOI , Bonwon KOO , Yongyoung PARK , Hajun SUNG , Dongho AHN , Kiyeon YANG , Wooyoung YANG , Changseung LEE
摘要： Provided are a switching device and a memory device including the switching device. The switching device includes first and second electrodes, and a switching material layer provided between the first and second electrodes and including a chalcogenide. The switching material layer includes a core portion and a shell portion covering a side surface of the core portion. The switching layer includes a material having an electrical resistance greater than an electrical resistance of the core portion, for example in at least one of the core portion or the shell portion.
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公开(公告)号：US20220406842A1
公开(公告)日：2022-12-22
申请号：US17523363
申请日：2021-11-10
发明人： Hajun SUNG , Bonwon KOO , Segab KWON , Yongyoung PARK , Dongho AHN , Kiyeon YANG , Wooyoung YANG , Changseung LEE , Minwoo CHOI
摘要： Provided are a chalcogenide material, and a device and a memory device each including the same. The chalcogenide material may include: germanium (Ge) as a first component; arsenic (As) as a second component; at least one element selected from selenium (Se) and tellurium (Te) as a third component; and at least one element selected from the elements of Groups 2, 16, and 17 of the periodic table as a fourth component, wherein a content of the first component may be from 5 at % to 30 at %, a content of the second component may be from 20 at % to 40 at %, a content of the third component may be from 25 at % to 75 at %, and a content of the fourth component may be from 0.5 at % to 5 at %.
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10.发明申请公开(公告)号：US20220140003A1
公开(公告)日：2022-05-05
申请号：US17244212
申请日：2021-04-29
发明人： Wooyoung YANG , Bonwon KOO , Chungman KIM , Kwangmin PARK , Hajun SUNG , Dongho AHN , Changseung LEE , Minwoo CHOI
摘要： A chalcogen compound layer exhibiting ovonic threshold switching characteristics, a switching device, a semiconductor device, and/or a semiconductor apparatus including the same are provided. The switching device and/or the semiconductor device may include two or more chalcogen compound layers having different energy band gaps. Alternatively, the switching device and/or semiconductor device may include a chalcogen compound layer having a concentration gradient of an element of boron (B), aluminum (Al), scandium (Sc), manganese (Mn), strontium (Sr), and/or indium (In) in a thickness direction thereof. The switching device and/or a semiconductor device may exhibit stable switching characteristics while having a low off-current value (leakage current value).
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