公开(公告)号：US20220069011A1

公开(公告)日：2022-03-03

申请号：US17209660

申请日：2021-03-23

申请人： Samsung Electronics Co., Ltd.

发明人： Dongho AHN ,  Segab KWON ,  Chungman KIM ,  Kwangmin PARK ,  Zhe WU ,  Seunggeun YU ,  Wonjun LEE ,  Jabin LEE ,  Jinwoo LEE

IPC分类号： H01L27/24 ,  H01L45/00

摘要： A semiconductor device includes a semiconductor substrate, a peripheral device on the semiconductor substrate, a lower insulating structure on the semiconductor substrate and covering the peripheral device, a first conductive line on the lower insulating structure, a memory cell structure on the first conductive line, and a second conductive line on the memory cell structure. The memory cell structure may include an information storage material pattern and a selector material pattern on the lower insulating structure in a vertical direction. The selector material pattern may include a first selector material layer including a first material and a second selector material layer including a second material. The second selector material layer may have a threshold voltage drift higher than that of the first material. The second selector material layer may have a second width narrower than a first width of the first selector material layer.

公开(公告)号：US20220149114A1

公开(公告)日：2022-05-12

申请号：US17362075

申请日：2021-06-29

申请人： Samsung Electronics Co., Ltd.

发明人： Kiyeon YANG ,  Bonwon KOO ,  Segab KWON ,  Chungman KIM ,  Yongyoung PARK ,  Dongho AHN ,  Seunggeun YU ,  Changseung LEE

IPC分类号： H01L27/24 ,  H01L45/00 ,  H01L29/24

摘要： Provided are a chalcogen compound having ovonic threshold switching characteristics, and a switching device, a semiconductor device, and/or a semiconductor apparatus which include the chalcogen compound. The chalcogen compound includes five or more elements and may have stable switching characteristics with a low off-current value (leakage current value). The chalcogen compound includes: selenium (Se) and tellurium (Te); a first element comprising at least one of indium (In), aluminum (Al), strontium (Sr), and calcium (Ca); and a second element including germanium (Ge) and/or tin (Sn), and may further include at least one of arsenic (As), antimony (Sb), and bismuth (Bi).

公开(公告)号：US20240177771A1

公开(公告)日：2024-05-30

申请号：US18334790

申请日：2023-06-14

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Soyeon CHOI ,  Zhe WU ,  Chungman KIM ,  Seunggeun YU ,  Jabin LEE

IPC分类号： G11C13/00

CPC分类号： G11C13/0069 ,  G11C13/0004 ,  G11C13/004

摘要： An operating method of a self-selecting memory device, includes an operation of applying a first write pulse corresponding to a first state to a first memory cell during a first pulse width, and an operation of applying a second write pulse corresponding to a second state to a second memory cell during a second pulse width, wherein the first write pulse and the second write pulse have substantially opposite polarities, wherein the first pulse width is longer than the second pulse width.