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7 条记录 (耗时 0.016 秒)

    SEMICONDUCTOR DEVICE
    1.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220069011A1

    公开(公告)日：2022-03-03

    申请号：US17209660

    申请日：2021-03-23

    申请人： Samsung Electronics Co., Ltd.

    发明人： Dongho AHN ,  Segab KWON ,  Chungman KIM ,  Kwangmin PARK ,  Zhe WU ,  Seunggeun YU ,  Wonjun LEE ,  Jabin LEE ,  Jinwoo LEE

    IPC分类号： H01L27/24 ,  H01L45/00

    摘要： A semiconductor device includes a semiconductor substrate, a peripheral device on the semiconductor substrate, a lower insulating structure on the semiconductor substrate and covering the peripheral device, a first conductive line on the lower insulating structure, a memory cell structure on the first conductive line, and a second conductive line on the memory cell structure. The memory cell structure may include an information storage material pattern and a selector material pattern on the lower insulating structure in a vertical direction. The selector material pattern may include a first selector material layer including a first material and a second selector material layer including a second material. The second selector material layer may have a threshold voltage drift higher than that of the first material. The second selector material layer may have a second width narrower than a first width of the first selector material layer.

    RESISTIVE MEMORY DEVICE
    2.
    发明申请
    RESISTIVE MEMORY DEVICE 有权

    公开(公告)号：US20220406844A1

    公开(公告)日：2022-12-22

    申请号：US17568866

    申请日：2022-01-05

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Chungman KIM ,  Bonwon KOO ,  Dongho AHN ,  Kiyeon YANG ,  Zhe WU ,  Chang Seung LEE

    IPC分类号： H01L27/24 ,  H01L45/00

    摘要： A resistive memory device including a resistive memory pattern; and a selection element pattern electrically connected to the resistive memory pattern, the selection element pattern including a chalcogenide switching material and at least one metallic material, the chalcogenide switching material including germanium, arsenic, and selenium, and the at least one metallic material including aluminum, strontium, or indium, wherein the selection element pattern includes an inhomogeneous material layer in which content of the at least one metallic material in the selection element pattern is variable according to a position within the selection element pattern.

    VARIABLE RESISTANCE MEMORY DEVICE
    6.
    发明公开
    VARIABLE RESISTANCE MEMORY DEVICE 审中-公开

    公开(公告)号：US20230301218A1

    公开(公告)日：2023-09-21

    申请号：US18119970

    申请日：2023-03-10

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Wonjun PARK ,  Chungman KIM ,  Dongho AHN ,  Changyup PARK

    IPC分类号： H10N70/00 ,  H10N70/20 ,  H10B63/00

    CPC分类号： H10N70/8828 ,  H10B63/80 ,  H10N70/063 ,  H10N70/231 ,  H10N70/841

    摘要： A variable resistance memory device includes a first conductive line extending on a substrate in a first horizontal direction; a second conductive line extending on the first conductive line in a second horizontal direction perpendicular to the first horizontal direction; and a memory cell at an intersection between the first conductive line and the second conductive line, the memory cell including a selection element and a variable resistor, wherein the variable resistor includes a first variable resistance layer having a senary component represented by CaGedSbcTedAeXf, in which A and X are each a group 13 element different from each other, and 1≤a≤18, 13≤b≤26, 15≤c≤30, 35≤d≤55, 0.1≤e≤8, 0.1≤f≤8, and a+b+c+d+e+f=100.