公开(公告)号：US20230042262A1

公开(公告)日：2023-02-09

申请号：US17522197

申请日：2021-11-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minwoo CHOI ,  Bonwon KOO ,  Yongyoung PARK ,  Hajun SUNG ,  Dongho AHN ,  Kiyeon YANG ,  Wooyoung YANG ,  Changseung LEE

IPC: H01L27/24 ,  G11C13/00 ,  H01L45/00

Abstract: Provided are a switching device and a memory device including the switching device. The switching device includes first and second electrodes, and a switching material layer provided between the first and second electrodes and including a chalcogenide. The switching material layer includes a core portion and a shell portion covering a side surface of the core portion. The switching layer includes a material having an electrical resistance greater than an electrical resistance of the core portion, for example in at least one of the core portion or the shell portion.

公开(公告)号：US20220406842A1

公开(公告)日：2022-12-22

申请号：US17523363

申请日：2021-11-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hajun SUNG ,  Bonwon KOO ,  Segab KWON ,  Yongyoung PARK ,  Dongho AHN ,  Kiyeon YANG ,  Wooyoung YANG ,  Changseung LEE ,  Minwoo CHOI

IPC: H01L27/24 ,  H01L27/22 ,  C01B19/00

Abstract: Provided are a chalcogenide material, and a device and a memory device each including the same. The chalcogenide material may include: germanium (Ge) as a first component; arsenic (As) as a second component; at least one element selected from selenium (Se) and tellurium (Te) as a third component; and at least one element selected from the elements of Groups 2, 16, and 17 of the periodic table as a fourth component, wherein a content of the first component may be from 5 at % to 30 at %, a content of the second component may be from 20 at % to 40 at %, a content of the third component may be from 25 at % to 75 at %, and a content of the fourth component may be from 0.5 at % to 5 at %.

公开(公告)号：US20220149114A1

公开(公告)日：2022-05-12

申请号：US17362075

申请日：2021-06-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kiyeon YANG ,  Bonwon KOO ,  Segab KWON ,  Chungman KIM ,  Yongyoung PARK ,  Dongho AHN ,  Seunggeun YU ,  Changseung LEE

IPC: H01L27/24 ,  H01L45/00 ,  H01L29/24

Abstract: Provided are a chalcogen compound having ovonic threshold switching characteristics, and a switching device, a semiconductor device, and/or a semiconductor apparatus which include the chalcogen compound. The chalcogen compound includes five or more elements and may have stable switching characteristics with a low off-current value (leakage current value). The chalcogen compound includes: selenium (Se) and tellurium (Te); a first element comprising at least one of indium (In), aluminum (Al), strontium (Sr), and calcium (Ca); and a second element including germanium (Ge) and/or tin (Sn), and may further include at least one of arsenic (As), antimony (Sb), and bismuth (Bi).

公开(公告)号：US20180190909A1

公开(公告)日：2018-07-05

申请号：US15635990

申请日：2017-06-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Xianyu WENXU ,  Yongyoung PARK ,  Kideok BAE ,  Wooyoung YANG ,  Changseung LEE

IPC: H01L51/00 ,  H01L21/66 ,  H01L21/67 ,  H01L51/44

CPC classification number: H01L22/12 ,  G01M11/0228 ,  G01N3/068 ,  G01N3/08 ,  G01N2203/0278 ,  G01N2203/0282 ,  G01N2203/0641 ,  H01L21/67288 ,  H01L22/20 ,  H01L22/24 ,  H01L22/26 ,  H01L51/0031 ,  H01L51/0096 ,  H01L51/5253 ,  Y02E10/549

Abstract: A method of evaluating the quality of a thin film layer may include: forming the thin film layer on a substrate; applying a stress to the thin film layer; and evaluating the quality of the thin film layer. A device for evaluating the quality of the thin film layer may include a stress chamber for applying a stress to the thin film layer and a refractive index measuring unit for evaluating the quality of the thin film layer based on a rate of change of a refractive index.

公开(公告)号：US20160247906A1

公开(公告)日：2016-08-25

申请号：US15026681

申请日：2014-09-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Xianyu WENXU ,  Yongsung KIM ,  Changyoul MOON ,  Yongyoung PARK ,  Wooyoung YANG ,  Jeongyub LEE ,  Jooho LEE

IPC: H01L29/78 ,  H01L29/45 ,  H01L29/10 ,  H01L29/08 ,  H01L29/24 ,  H01L29/423 ,  H01L29/16 ,  H01L21/3105 ,  H01L21/306 ,  H01L29/47 ,  H01L29/06

CPC classification number: H01L29/78 ,  H01L21/30625 ,  H01L21/31051 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1033 ,  H01L29/1606 ,  H01L29/24 ,  H01L29/42364 ,  H01L29/4238 ,  H01L29/45 ,  H01L29/47 ,  H01L29/66045 ,  H01L29/7781

Abstract: Provided are semiconductor devices and methods of manufacturing the same. A semiconductor device may include a source, a drain, a semiconductor element between the source and the drain, and a graphene layer that is provided on the source and the semiconductor element and is spaced apart from the drain. Surfaces of the source and the drain are substantially co-planar with a surface of the semiconductor element. The semiconductor element may be spaced apart from the source and may contact the drain. The graphene layer may have a planar structure. A gate insulating layer and a gate may be provided on the graphene layer. The semiconductor device may be a transistor. The semiconductor device may have a barristor structure. The semiconductor device may be a planar type graphene barristor.

Abstract translation: 提供半导体器件及其制造方法。 半导体器件可以包括源极，漏极，源极和漏极之间的半导体元件以及设置在源极和半导体元件上并与漏极间隔开的石墨烯层。 源极和漏极的表面与半导体元件的表面基本上共面。 半导体元件可以与源极间隔开并且可以接触漏极。 石墨烯层可以具有平面结构。 栅极绝缘层和栅极可以设置在石墨烯层上。 半导体器件可以是晶体管。 该半导体器件可以具有一个截击器结构。 半导体器件可以是平面型石墨烯阻尼器。