公开(公告)号：US09343121B2

公开(公告)日：2016-05-17

申请号：US14608435

申请日：2015-01-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sejeong Jang ,  Kyungryun Kim ,  Nam-Ho Kim

IPC: G11C7/04 ,  G11C16/32 ,  G11C16/04 ,  G11C16/26 ,  G11C16/34 ,  G11C11/406

CPC classification number: G11C7/04 ,  G11C11/40626 ,  G11C11/5642 ,  G11C16/0466 ,  G11C16/0483 ,  G11C16/26 ,  G11C16/32 ,  G11C16/3418

Abstract: An operating method of a storage device is provided. The storage device includes a nonvolatile memory and a memory controller to control the nonvolatile memory. Temperature is detected. A current weighted time is calculated using the temperature. Data is read from the nonvolatile memory using a read voltage level which is adjusted based on the current weighted time. The current weighted time is determined according to an amount of charges leaked from memory cells storing the data at the temperature.

Abstract translation: 提供了一种存储装置的操作方法。 存储装置包括非易失性存储器和用于控制非易失性存储器的存储器控​​制器。 检测到温度。 使用温度计算当前加权时间。 使用基于当前加权时间调整的读取电压电平从非易失性存储器读取数据。 当前的加权时间是根据在温度下存储数据的存储单元泄漏的电荷量确定的。

公开(公告)号：US11029873B2

公开(公告)日：2021-06-08

申请号：US16543800

申请日：2019-08-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaewon Song ,  Jaesub Kim ,  Sejeong Jang

IPC: G06F3/06 ,  G06F9/50 ,  G06F12/02

Abstract: A method of operating a storage device with a memory includes partitioning an entire area of a first namespace into at least one area based on a reference size. The partitioning is performed in response to a namespace creating request from a host that includes size information corresponding to the entire area of the first namespace. The method further includes partitioning a logical address space of the memory into a plurality of segments, allocating a first segment of the plurality of segments to a first area of the at least one area, and storing mapping information of the first area and the first segment. A size of the logical address space is greater than a size of a physical storage space of the memory identified by the host.

公开(公告)号：US20210247922A1

公开(公告)日：2021-08-12

申请号：US17244528

申请日：2021-04-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JAEWON SONG ,  Jaesub Kim ,  Sejeong Jang

IPC: G06F3/06 ,  G06F9/50 ,  G06F12/02

Abstract: A method of operating a storage device with a memory includes partitioning an entire area of a first namespace into at least one area based on a reference size. The partitioning is performed in response to a namespace creating request from a host that includes size information corresponding to the entire area of the first namespace. The method further includes partitioning a logical address space of the memory into a plurality of segments, allocating a first segment of the plurality of segments to a first area of the at least one area, and storing mapping information of the first area and the first segment. A size of the logical address space is greater than a size of a physical storage space of the memory identified by the host.

公开(公告)号：US11620066B2

公开(公告)日：2023-04-04

申请号：US17244528

申请日：2021-04-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaewon Song ,  Jaesub Kim ,  Sejeong Jang

IPC: G06F3/06 ,  G06F9/50 ,  G06F12/02

Abstract: A method of operating a storage device with a memory includes partitioning an entire area of a first namespace into at least one area based on a reference size. The partitioning is performed in response to a namespace creating request from a host that includes size information corresponding to the entire area of the first namespace. The method further includes partitioning a logical address space of the memory into a plurality of segments, allocating a first segment of the plurality of segments to a first area of the at least one area, and storing mapping information of the first area and the first segment. A size of the logical address space is greater than a size of a physical storage space of the memory identified by the host.

公开(公告)号：US11011233B2

公开(公告)日：2021-05-18

申请号：US16442670

申请日：2019-06-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dae-Jin Kim ,  Sang-Ryong Park ,  Jong-Nam Baek ,  Sejeong Jang

IPC: G11C16/04 ,  G11C16/08 ,  G06F3/06 ,  G06F12/02 ,  G11C16/16 ,  G11C16/34

Abstract: A nonvolatile memory device includes a memory cell array that includes memory blocks, wherein each of the memory blocks includes pages each including memory cells, a row decoder circuit that selects one of the pages from a selected memory block of the memory blocks in a write operation and selects memory cells of a close unit from the selected memory block in a close operation, and a page buffer circuit that writes data into memory cells of a page selected by the row decoder circuit in the write operation and writes dummy data into the memory cells of the close unit selected by the row decoder circuit in the close operation. The close unit includes one or more pages, and, in the close operation, the row decoder circuit adjusts a size of the close unit.

公开(公告)号：US09837167B2

公开(公告)日：2017-12-05

申请号：US15227945

申请日：2016-08-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangkwon Moon ,  Sejeong Jang ,  Heewon Lee

IPC: G11C16/06 ,  G11C16/34 ,  G06F11/07 ,  G11C29/02 ,  G11C16/10 ,  G11C16/16 ,  G11C16/26 ,  G11C16/04 ,  G11C29/42 ,  G11C16/08 ,  G06F11/00 ,  G11C16/12

CPC classification number: G11C16/3495 ,  G06F11/008 ,  G06F11/073 ,  G06F11/0754 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/10 ,  G11C16/12 ,  G11C16/16 ,  G11C16/26 ,  G11C16/349 ,  G11C29/021 ,  G11C29/028 ,  G11C29/42

Abstract: A method for operating a storage device including a flash memory, comprising: determining a data reliability level of the flash memory; comparing the data reliability level with a threshold; and changing an operating condition of the flash memory to improve the data reliability level of the flash memory when the data reliability level of the flash memory is lower than the threshold.