公开(公告)号：US20240231219A1

公开(公告)日：2024-07-11

申请号：US18469743

申请日：2023-09-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Nam Jin CHO ,  Yi Hwan KIM ,  Seok Jun HONG ,  Seong Keun CHO ,  Sang Chul HAN

IPC: G03F1/48 ,  G03F1/60 ,  H01L21/02 ,  H01L21/033

CPC classification number: G03F1/48 ,  G03F1/60 ,  H01L21/02592 ,  H01L21/0332

Abstract: A hard mask may include a first layer and a second layer on the first layer. Each of the first layer and the second layer may include an amorphous carbon layer. The first layer may have a first extinction coefficient. The second layer may have a second extinction coefficient and the second extinction coefficient may be different from the first extinction coefficient. The first extinction coefficient and the second extinction coefficient each may be in a range of 0.4 to 0.7.

公开(公告)号：US20230170289A1

公开(公告)日：2023-06-01

申请号：US17811342

申请日：2022-07-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woo Seong JANG ,  Won Ji PARK ,  Jeong Hoon AHN ,  Jae Hee OH ,  Ji Hyung KIM ,  Shaofeng DING ,  Seok Jun HONG ,  Je Gwan HWANG

IPC: H01L23/498 ,  H01L25/065 ,  H01L23/64 ,  H01L23/538 ,  H01L49/02

CPC classification number: H01L23/49838 ,  H01L23/642 ,  H01L23/5385 ,  H01L23/5386 ,  H01L23/49822 ,  H01L23/49833 ,  H01L25/0655 ,  H01L28/91 ,  H01L24/16 ,  H01L2924/1431 ,  H01L2924/1432 ,  H01L2924/1433 ,  H01L2924/1434 ,  H01L2924/37001

Abstract: An interposer structure includes an interposer substrate, an interlayer insulating layer on an upper surface of the interposer substrate, a capacitor structure inside the interlayer insulating layer, a first via which penetrates the interlayer insulating layer in a vertical direction, the first via being connected to the capacitor structure, an insulating layer on the interlayer insulating layer, a second via which penetrates the insulating layer in the vertical direction, the second via being connected to the first via, and a through via which completely penetrates each of the interposer substrate, the interlayer insulating layer, and the insulating layer in the vertical direction, an upper surface of the through via being coplanar with an upper surface of the second via.