公开(公告)号：US20240234096A1

公开(公告)日：2024-07-11

申请号：US18239155

申请日：2023-08-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nam Jin CHO ,  Yi Hwan KIM ,  Sang Chul HAN ,  Sang Ki NAM ,  Jun Ho LEE ,  Hyun Jae LEE

IPC: H01J37/32 ,  C23C16/26 ,  C23C16/48

CPC classification number: H01J37/3244 ,  C23C16/26 ,  C23C16/48 ,  H01J37/3211 ,  H01J37/32623 ,  H01J2237/3321 ,  H01L21/033

Abstract: A method for fabricating a semiconductor device includes loading a substrate into a lower region in a chamber separated by a shower head into the lower region and an upper region, supplying a source gas to the upper region, generating plasma including ions and radicals in the upper region, using a magnetic field and an electric field generated from an antenna on the upper region, and the source gas, supplying the ions and the radicals generated in the upper region into the lower region through a plurality of plasma inlet holes formed to penetrate the shower head in a vertical direction, supplying a process gas into the lower region through a plurality of process gas supply holes formed in the shower head, and forming a deposition film on the substrate inside the lower region, using the ions, the radicals and the process gas.

公开(公告)号：US20240266148A1

公开(公告)日：2024-08-08

申请号：US18416990

申请日：2024-01-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Min Su LEE ,  Yeon Tae KIM ,  Yon Joo KANG ,  Yi Hwan KIM ,  Won Ki LEE ,  Hyeon Jin JEON ,  Hyeong Un JEON

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/50

CPC classification number: H01J37/3244 ,  C23C16/45565 ,  C23C16/50 ,  H01J37/32724 ,  H01J2237/3343

Abstract: A semiconductor manufacturing device comprising a support unit in a chamber. A showerhead disposed between first and second plasma regions. First and second gas supply units injecting first and second process gases, respectively, into the second plasma region through the showerhead. The showerhead includes plasma penetration portions passing a portion of the plasma generated in the first plasma region therethrough. First gas flow paths injecting the first process gas into a first zone of the showerhead. Second gas flow paths injecting the second process gas into a second zone of the showerhead that surrounds the first zone. First and second cavities connected to the first and second gas flow paths, respectively. The first and second cavities diffusing the first and second process gases, respectively. First and second gas spraying holes connected to the first and second cavities, respectively, and facing the second plasma region.

公开(公告)号：US20240231219A1

公开(公告)日：2024-07-11

申请号：US18469743

申请日：2023-09-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Nam Jin CHO ,  Yi Hwan KIM ,  Seok Jun HONG ,  Seong Keun CHO ,  Sang Chul HAN

IPC: G03F1/48 ,  G03F1/60 ,  H01L21/02 ,  H01L21/033

CPC classification number: G03F1/48 ,  G03F1/60 ,  H01L21/02592 ,  H01L21/0332

Abstract: A hard mask may include a first layer and a second layer on the first layer. Each of the first layer and the second layer may include an amorphous carbon layer. The first layer may have a first extinction coefficient. The second layer may have a second extinction coefficient and the second extinction coefficient may be different from the first extinction coefficient. The first extinction coefficient and the second extinction coefficient each may be in a range of 0.4 to 0.7.