公开(公告)号：US20240234096A1

公开(公告)日：2024-07-11

申请号：US18239155

申请日：2023-08-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nam Jin CHO ,  Yi Hwan KIM ,  Sang Chul HAN ,  Sang Ki NAM ,  Jun Ho LEE ,  Hyun Jae LEE

IPC: H01J37/32 ,  C23C16/26 ,  C23C16/48

CPC classification number: H01J37/3244 ,  C23C16/26 ,  C23C16/48 ,  H01J37/3211 ,  H01J37/32623 ,  H01J2237/3321 ,  H01L21/033

Abstract: A method for fabricating a semiconductor device includes loading a substrate into a lower region in a chamber separated by a shower head into the lower region and an upper region, supplying a source gas to the upper region, generating plasma including ions and radicals in the upper region, using a magnetic field and an electric field generated from an antenna on the upper region, and the source gas, supplying the ions and the radicals generated in the upper region into the lower region through a plurality of plasma inlet holes formed to penetrate the shower head in a vertical direction, supplying a process gas into the lower region through a plurality of process gas supply holes formed in the shower head, and forming a deposition film on the substrate inside the lower region, using the ions, the radicals and the process gas.

公开(公告)号：US20140238302A1

公开(公告)日：2014-08-28

申请号：US14182407

申请日：2014-02-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki Hyun KIM ,  Yeon Tae KIM ,  Nam Jin CHO

IPC: C23C16/52

CPC classification number: C23C16/52 ,  C23C16/45527 ,  C23C16/45546 ,  C23C16/4557 ,  C23C16/46

Abstract: An atomic layer deposition apparatus including a substrate loading unit provided in a process chamber, the substrate loading unit including at least one substrate loading plate on which a substrate is to be loaded, an injector assembly coupled to the process chamber and configured to supply a plurality of reactants to deposit a multilayer film onto the substrate while sweeping over the substrate loaded on the substrate loading plate, a plurality of first heat sources configured to heat in a non-contact manner, and, a plurality of second heat sources configured to heat in a contact manner, the first and second heat sources at different positions in the process chamber may be provided.

Abstract translation: 一种原子层沉积设备，包括设置在处理室中的基板装载单元，所述基板装载单元包括至少一个基板装载板，基板装载在该至少一个基板装载板上;喷射器组件，其耦合到处理室并被配置为提供多个 的反应物将多层膜沉积在衬底上，同时扫过装载在衬底装载板上的衬底，多个构造成以非接触方式加热的第一热源，以及多个构造成在 可以提供接触方式，处理室中不同位置处的第一和第二热源。

公开(公告)号：US20240231219A1

公开(公告)日：2024-07-11

申请号：US18469743

申请日：2023-09-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Nam Jin CHO ,  Yi Hwan KIM ,  Seok Jun HONG ,  Seong Keun CHO ,  Sang Chul HAN

IPC: G03F1/48 ,  G03F1/60 ,  H01L21/02 ,  H01L21/033

CPC classification number: G03F1/48 ,  G03F1/60 ,  H01L21/02592 ,  H01L21/0332

Abstract: A hard mask may include a first layer and a second layer on the first layer. Each of the first layer and the second layer may include an amorphous carbon layer. The first layer may have a first extinction coefficient. The second layer may have a second extinction coefficient and the second extinction coefficient may be different from the first extinction coefficient. The first extinction coefficient and the second extinction coefficient each may be in a range of 0.4 to 0.7.