公开(公告)号：US11380791B2

公开(公告)日：2022-07-05

申请号：US16225122

申请日：2018-12-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-Seung Song ,  Hyo-Jin Kim ,  Kyoung-Mi Park ,  Hwi-Chan Jun ,  Seung-Seok Ha

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/66 ,  H01L29/423 ,  H01L29/417

Abstract: A semiconductor device includes a first impurity region, a channel pattern, a second impurity region, a gate structure, a first contact pattern, a second contact pattern and a spacer. The first impurity region may be formed on a substrate. The channel pattern may protrude from an upper surface of the substrate. The second impurity region may be formed on the channel pattern. The gate structure may be formed on a sidewall of the channel pattern and the substrate adjacent to the channel pattern, and the gate structure may include a gate insulation pattern and a gate electrode. The first contact pattern may contact an upper surface of the second impurity region. The second contact pattern may contact a surface of the gate electrode. The spacer may be formed between the first and second contact patterns. The spacer may surround a portion of a sidewall of the second contact pattern, and the spacer may contact a sidewall of each of the first and second contact patterns.

公开(公告)号：US09679991B2

公开(公告)日：2017-06-13

申请号：US14670324

申请日：2015-03-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hwi-Chan Jun ,  Deok-Han Bae ,  Hyun-Seung Song ,  Seung-Seok Ha

IPC: H01L21/336 ,  H01L29/66 ,  H01L21/768 ,  H01L21/311

CPC classification number: H01L29/66795 ,  H01L21/31144 ,  H01L21/76897 ,  H01L29/66545 ,  H01L29/6656

Abstract: Embodiments of the disclosure relate to a method for manufacturing a semiconductor device including a field effect transistor with improved electrical characteristics. According to embodiments of the disclosure, self-aligned contact plugs may be effectively formed using a metal hard mask portion disposed on a gate portion. In addition, a process margin of a photoresist mask for the formation of the self-aligned contact plugs may be improved by using the metal hard mask portion.

公开(公告)号：US12249648B2

公开(公告)日：2025-03-11

申请号：US17857608

申请日：2022-07-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun-Seung Song ,  Hyo-Jin Kim ,  Kyoung-Mi Park ,  Hwi-Chan Jun ,  Seung-Seok Ha

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66

Abstract: A semiconductor device includes a first impurity region on a substrate; a channel pattern protruding from an upper surface of the substrate, the channel pattern extending in a first direction substantially parallel to the upper surface of the substrate; a second impurity region on the channel pattern, the second impurity region covering an entire upper surface of the channel pattern; a gate structure on a sidewall of the channel pattern and the substrate adjacent to the channel pattern; a first contact pattern on the second impurity region; a second contact pattern that is electrically connected to the gate structure; and a spacer between the first contact pattern and the second contact pattern. The spacer completely surrounds the second contact pattern in plan view, and the first contact pattern partially surrounds the second contact pattern in plan view.