公开(公告)号：US20190088322A1

公开(公告)日：2019-03-21

申请号：US16127995

申请日：2018-09-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Suk-soo PYO ,  Hyun-taek JUNG ,  So-hee HWANG ,  Tae-joong SONG

IPC: G11C13/00 ,  G11C11/56 ,  G11C11/16

CPC classification number: G11C13/004 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/5607 ,  G11C2013/0054

Abstract: A method of controlling a reference cell in a resistive memory to identify values stored in a plurality of memory cells is provided. The method includes writing a first value to the plurality of memory cells, providing, to the reference cell, monotonically increasing or monotonically decreasing reference currents. The method includes reading the plurality of memory cells as each of the reference currents is provided to the reference cell, and determining a read reference current based on an aggregation of results of the reading.