公开(公告)号：US20220261584A1

公开(公告)日：2022-08-18

申请号：US17512989

申请日：2021-10-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chul Joon HEO ,  Kyung Bae PARK ,  Sung Young YUN ,  Taejin CHOI ,  Feifei FANG ,  Myungsun SIM ,  Sung Hun LEE

IPC: G06K9/00 ,  G09G3/20 ,  H01L27/28 ,  H01L27/30 ,  H01L27/32

Abstract: A sensor-embedded display panel includes a substrate, first, second, and third light emitting elements on the substrate, the first, second, and third light emitting elements including separate, respective light emitting layers, and a light absorbing layer on the substrate, the light absorbing layer being in parallel with the light emitting layer along the surface direction of the substrate, wherein the first, second, and third light emitting elements and the light absorption sensor include a first common auxiliary layer that is continuously disposed on the light emitting layers and the light absorbing layer, and a common electrode on the first common auxiliary layer and configured to apply a common voltage to the first, second, and third light emitting elements and the light absorption sensor, and the light absorption sensor includes an n-type semiconductor layer between the light absorbing layer and the first common auxiliary layer and including an n-type semiconductor.

公开(公告)号：US20220285445A1

公开(公告)日：2022-09-08

申请号：US17686934

申请日：2022-03-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Gon KIM ,  Shin Ae JUN ,  Deukseok CHUNG ,  Garam PARK ,  Sung Hun LEE ,  Byoung Ki CHOI

IPC: H01L27/32 ,  H01L51/50 ,  C09K11/02 ,  C09K11/88 ,  C09K11/08

Abstract: A display panel may include a light emitting panel, and a color conversion panel. The light emitting panel is configured to emit incident light including a first light and a second light, a luminescent peak wavelength of the first light may be greater than or equal to about 450 nm and less than or equal to about 480 nm and a luminescent peak wavelength of the second light may be greater than or equal to about 500 nm and less than or equal to about 580 nm. The color conversion panel includes a color conversion layer including a conversion region, and optionally, a partition wall defining each region of the color conversion panel. The color conversion region includes a first region corresponding to a red pixel, and the first region include a first composite including a matrix and a plurality of luminescent nanostructures dispersed in the matrix, and in the UV-Vis absorption spectrum, an absorbance ratio at a wavelength of 520 nm with respect to a wavelength of 350 nm may be greater than or equal to about 0.04:1.

公开(公告)号：US20200243622A1

公开(公告)日：2020-07-30

申请号：US16750106

申请日：2020-01-23

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  SAMSUNG DISPLAY CO., LTD. ,  SAMSUNG SDI CO., LTD.

Inventor： Deukseok CHUNG ,  Sung Hun LEE ,  Tae Gon KIM ,  Shin Ae JUN

IPC: H01L27/32 ,  H01L51/50 ,  H01L51/52

Abstract: A display device includes a first electrode, a pixel define layer disposed on the first electrode, the pixel define layer including an opening, an organic emission layer disposed on the pixel define layer, the organic emission layer in electrical communication with the first electrode through the opening, a second electrode disposed on the organic emission layer, a light recycle layer disposed on the second electrode, and a color filter layer disposed on the light recycle layer, the color filter layer including a quantum dot, wherein a width of the organic emission layer is longer than a width of the color filter layer.

公开(公告)号：US20190237475A1

公开(公告)日：2019-08-01

申请号：US16137079

申请日：2018-09-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： EUN TAEK JUNG ,  Sung Hun LEE

IPC: H01L27/11582 ,  H01L27/11573 ,  H01L29/423

Abstract: A three-dimensional semiconductor device including: a peripheral circuit structure disposed between first and second substrates and including a plurality of peripheral interconnections; a gate-stack structure disposed on the second substrate and including a plurality of gate electrodes stacked and spaced apart from each other in a direction perpendicular to an upper surface of the second substrate, wherein the plurality of gate electrodes include a lower gate electrode, a plurality of intermediate gate electrodes disposed on the lower gate electrode, and an upper gate electrode disposed on the plurality of intermediate gate electrodes; a first through region passing through the second substrate and disposed below the gate-stack structure; a second through region passing through the second substrate and the gate-stack structure; and a first peripheral connection plug passing through the first through region and electrically connecting the lower gate electrode to a first peripheral interconnection of the peripheral. interconnections.

公开(公告)号：US20170190966A1

公开(公告)日：2017-07-06

申请号：US15463721

申请日：2017-03-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun Joo JANG ,  Shin Ae JUN ,  Sung Hun LEE ,  Jong Jin PARK ,  Seong Jae CHOI ,  Tae Kyung AHN

IPC: C09K11/02 ,  H01L51/50 ,  C30B29/48 ,  F21V9/16 ,  C30B7/14 ,  C09K11/88 ,  F21V8/00

CPC classification number: C09K11/025 ,  B82Y20/00 ,  B82Y30/00 ,  C09K11/565 ,  C09K11/62 ,  C09K11/621 ,  C09K11/64 ,  C09K11/661 ,  C09K11/70 ,  C09K11/7492 ,  C09K11/88 ,  C09K11/883 ,  C09K11/892 ,  C30B7/14 ,  C30B29/48 ,  F21V9/30 ,  G02B6/005 ,  G02F2001/133614 ,  H01L51/5012 ,  H01L51/502 ,  H01L51/504 ,  H05B33/14 ,  Y10T428/256

Abstract: Disclosed herein is a method for preparing a multilayer of nanocrystals. The method comprises the steps of (i) coating nanocrystals surface-coordinated by a photosensitive compound, or a mixed solution of a photosensitive compound and nanocrystals surface-coordinated by a material miscible with the photosensitive compound, on a substrate, drying the coated substrate, and exposing the dried substrate to UV light to form a first monolayer of nanocrystals, and (ii) repeating the procedure of step (i) to form one or more monolayers of nanocrystals on the first monolayer of nanocrystals.

公开(公告)号：US20220285446A1

公开(公告)日：2022-09-08

申请号：US17687451

申请日：2022-03-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Gon KIM ,  Shin Ae JUN ,  Deukseok CHUNG ,  Nayoun WON ,  Sung Hun LEE ,  Byoung Ki CHOI

IPC: H01L27/32 ,  H01L51/56 ,  C09K11/88 ,  C09K11/56

Abstract: A display panel including a light emitting panel; and a color conversion panel with a surface opposite a surface of the light emitting panel. The light emitting panel is configured to emit incident light including a first light and a second light. The color conversion panel includes a color conversion layer including two or more color conversion regions, a color conversion region includes a first region corresponding to the green pixel, the first region includes a matrix and a first composite dispersed within the matrix and including a plurality of luminescent nanostructures, and the spectral overlap between a UV-Vis absorption spectrum of the luminescent nanostructures, the maximum emission peak of the first light, and the maximum emission peak of the second light satisfies the following equation: B/A≤about 0.6 A and B are as defined.

公开(公告)号：US20210408138A1

公开(公告)日：2021-12-30

申请号：US17474051

申请日：2021-09-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Gon KIM ,  Sung Hun LEE ,  Shin Ae JUN ,  Deukseok CHUNG

IPC: H01L27/32 ,  G02B3/00 ,  G02B5/20 ,  H01L51/52

Abstract: A display device includes an organic emission layer in which a first pixel area, a second pixel area and a third pixel area are defined, a color filter layer disposed on the organic emission layer and including first to third color filters overlapping the first to third pixel areas, respectively, where the first to third color filters emit first light to third light, respectively, a first optical filter layer disposed on the color filter layer and which transmits at least one of the first light and the second light and reflects or absorbs the third light, and a light-focusing layer disposed between the color filter layer and the organic emission layer and including first to third light-focusing parts overlapping the first to third pixel areas, respectively, where at least one of the first to third color filters includes quantum dots.

公开(公告)号：US20210408421A1

公开(公告)日：2021-12-30

申请号：US17473261

申请日：2021-09-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jang Joo KIM ,  Young Seo PARK ,  Sung Hun LEE ,  Kwon Hyeon KIM

IPC: H01L51/50

Abstract: An organic light-emitting diode (“OLED”) includes a bottom electrode, a top electrode disposed opposite to the bottom electrode, and an organic layer that is interposed between the bottom electrode and the top electrode and includes a hole-transporting host and an electron-transporting host forming an exciplex and a phosphorescent dopant having a triplet energy which is lower than the triplet energy of the hole-transporting host, the triplet energy of the electron-transporting host, and the triplet energy of the exciplex, and a lighting device and a display apparatus including the OLED. Instead of a phosphorescent dopant, the fluorescent dopant having a singlet energy which is lower than the singlet energy of the exciplex may be also used.

公开(公告)号：US20190237477A1

公开(公告)日：2019-08-01

申请号：US16162533

申请日：2018-10-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seok Cheon BAEK ,  Sung Hun LEE

IPC: H01L27/11582 ,  H01L27/11573 ,  H01L27/1157 ,  G11C7/18 ,  G11C8/14 ,  H01L29/423

CPC classification number: H01L27/11582 ,  G11C7/18 ,  G11C8/14 ,  H01L27/1157 ,  H01L27/11573 ,  H01L29/4234

Abstract: A three-dimensional semiconductor memory device including a gate-stack structure on a base substrate, the gate-stack structure including gate electrodes stacked in a direction perpendicular to a surface of the base substrate and spaced apart from each other; a through region penetrating through the gate-stack structure and surrounded by the gate-stack structure; and first vertical channel structures and second vertical channel structures on both sides of the through region and penetrating through the gate-stack structure, wherein the through region is between the first vertical channel structures and the second vertical channel structures.

公开(公告)号：US20190097155A1

公开(公告)日：2019-03-28

申请号：US16197842

申请日：2018-11-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jang Joo KIM ,  Young Seo PARK ,  Sung Hun LEE ,  Kwon Hyeon KIM

IPC: H01L51/50 ,  H01L51/00

Abstract: Provided are an organic light-emitting diode (“OLED”) including a bottom electrode, a top electrode disposed opposite to the bottom electrode, and an organic layer that is interposed between the bottom electrode and the top electrode and includes a hole-transporting host and an electron-transporting host forming an exciplex and a phosphorescent dopant having a triplet energy which is lower than the triplet energy of the hole-transporting host, the triplet energy of the electron-transporting host, and the triplet energy of the exciplex, and a lighting device and a display apparatus including the OLED. Instead of a phosphorescent dopant, the fluorescent dopant having a singlet energy which is lower than the singlet energy of the exciplex may be also used.