公开(公告)号：US10345698B2

公开(公告)日：2019-07-09

申请号：US15606170

申请日：2017-05-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji Beom Yoo ,  Sung Won Kwon ,  Dong Wook Shin ,  Mun Ja Kim ,  Jin Su Kim ,  Hwan Chul Jeon

IPC: G03F1/62 ,  G03F1/80 ,  H01L21/027 ,  G03F1/22 ,  G03F7/20

Abstract: A method for fabricating a semiconductor device includes forming a pellicle including an amorphous carbon layer, attaching the pellicle onto a reticle, and forming a photoresist pattern by utilizing EUV light transmitted through the pellicle and reflected by the reticle. The forming the pellicle includes forming a first dielectric layer on a first side of the substrate, forming the amorphous carbon layer on the first dielectric layer, forming a second dielectric layer on a second side of the substrate opposite to the first side of the substrate, etching the second dielectric layer overlapping the first region of the substrate to form a mask pattern, and forming a support including the second region of the substrate and the remaining part of the first dielectric layer. The forming the support includes etching the first region of the substrate and the first dielectric layer on the first region.

公开(公告)号：US20170278710A1

公开(公告)日：2017-09-28

申请号：US15411298

申请日：2017-01-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong Seung Moon ,  Byung Gook Kim ,  Jae Hyuck Choi ,  Sung Won Kwon

IPC: H01L21/033

CPC classification number: H01L21/0338 ,  B23K26/126 ,  B23K26/362 ,  B29C59/14 ,  B29C59/16 ,  B29C2791/009 ,  G03F1/80 ,  G03F7/0041 ,  H01L21/02675 ,  H01L21/0274 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/304 ,  H01L21/30621 ,  H01L21/31138

Abstract: Provided is a method of manufacturing a semiconductor device. The method of manufacturing a semiconductor device includes forming a target etching layer on a substrate, patterning the target etching layer to form a pattern layer including a pattern portion having a first height and a first width and a recess portion having a second width, providing a first gas and a second gas on the pattern layer, and performing a reaction process including reacting the first and second gases with a surface of the pattern portion by irradiating a laser beam on the pattern layer. The performing the reaction process includes removing a portion of sidewalls of the pattern portion so that the pattern portion has a third width that is smaller than the first width.

公开(公告)号：US10217635B2

公开(公告)日：2019-02-26

申请号：US15411298

申请日：2017-01-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong Seung Moon ,  Byung Gook Kim ,  Jae Hyuck Choi ,  Sung Won Kwon

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/027 ,  G03F1/80 ,  B23K26/12 ,  B23K26/362 ,  B29C59/14 ,  H01L21/304 ,  H01L21/02 ,  H01L21/306 ,  B29C59/16 ,  G03F7/004

Abstract: Provided is a method of manufacturing a semiconductor device. The method of manufacturing a semiconductor device includes forming a target etching layer on a substrate, patterning the target etching layer to form a pattern layer including a pattern portion having a first height and a first width and a recess portion having a second width, providing a first gas and a second gas on the pattern layer, and performing a reaction process including reacting the first and second gases with a surface of the pattern portion by irradiating a laser beam on the pattern layer. The performing the reaction process includes removing a portion of sidewalls of the pattern portion so that the pattern portion has a third width that is smaller than the first width.