公开(公告)号：US20170092547A1

公开(公告)日：2017-03-30

申请号：US15234170

申请日：2016-08-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Poren Tang ,  Sunjung Steve KIM ,  Moon Seung YANG ,  Seung Hun LEE ,  Hyun Jung LEE ,  Geun Hee JEONG

IPC: H01L21/8238 ,  H01L21/306 ,  H01L21/308 ,  H01L29/06 ,  H01L29/16 ,  H01L29/161 ,  H01L29/20 ,  H01L29/10 ,  H01L21/02 ,  H01L27/092

CPC classification number: H01L21/823892 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02458 ,  H01L21/02463 ,  H01L21/02499 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/30604 ,  H01L21/30612 ,  H01L21/308 ,  H01L21/823807 ,  H01L21/8258 ,  H01L27/092 ,  H01L29/0653 ,  H01L29/1054 ,  H01L29/1083 ,  H01L29/16 ,  H01L29/161 ,  H01L29/20 ,  H01L29/2003 ,  H01L29/78

Abstract: Methods of fabricating semiconductor device are provided including forming first and second material layers for a first transistor using epitaxial growth processes. A recess region is formed by partially etching the first and second material layers. Third and fourth material layers for a second transistor are formed using epitaxial growth processes.