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    Nanopore device including graphene nanopore and method of manufacturing the same
    1.
    发明授权
    Nanopore device including graphene nanopore and method of manufacturing the same 有权
    包括石墨烯纳米孔的纳米孔装置及其制造方法

    公开(公告)号：US09546995B2

    公开(公告)日：2017-01-17

    申请号：US14257654

    申请日：2014-04-21

    申请人： Samsung Electronics Co., Ltd.

    发明人： Tae-han Jeon ,  Jeo-young Shim ,  Kun-sun Eom ,  Dong-ho Lee ,  Joo-ho Lee

    IPC分类号： G01N27/327 ,  G01N27/453 ,  G01N27/447 ,  H01L29/66 ,  H01L21/768 ,  H01L29/16 ,  G01N33/487 ,  B81C1/00

    CPC分类号： G01N33/48721 ,  B81C1/00087

    摘要： Provided are a nanopore device with resolution improved by graphene nanopores, and a method of manufacturing the same. The nanopore device includes: a first insulating layer; a graphene layer disposed on the first insulating layer and having a nanopore formed at a center portion of the graphene layer; and first and second electrode layers disposed respectively at both sides of the nanopore on a top surface of the graphene layer, wherein a center region of the first insulating layer is removed such that the center portion of the graphene layer is exposed to the outside.

    摘要翻译： 提供了具有通过石墨烯纳米孔改善的分辨率的纳米孔装置及其制造方法。 纳米孔装置包括：第一绝缘层; 设置在所述第一绝缘层上并且具有形成在所述石墨烯层的中心部分的纳米孔的石墨烯层; 以及分别位于所述石墨烯层的顶表面上的所述纳米孔两侧的第一和第二电极层，其中去除所述第一绝缘层的中心区域，使得所述石墨烯层的中心部分暴露于外部。

    Graphene device and method of fabricating the same
    3.
    发明授权
    Graphene device and method of fabricating the same 有权
    石墨烯装置及其制造方法

    公开(公告)号：US08932941B2

    公开(公告)日：2015-01-13

    申请号：US13856022

    申请日：2013-04-03

    申请人： Samsung Electronics Co., Ltd.

    发明人： Joo-ho Lee ,  Tae-han Jeon ,  Yong-sung Kim ,  Chang-seung Lee ,  Yong-seok Jung

    IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L29/16 ,  H01L21/02 ,  B82Y40/00

    CPC分类号： H01L29/1606 ,  B82Y40/00 ,  H01L21/02527 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/78684 ,  Y10S977/734

    摘要： The method of manufacturing a graphene device includes forming an insulating material layer on a substrate, forming first and second metal pads on the insulating material layer spaced apart from each other, forming a graphene layer having a portion defined as an active area between the first and second metal pads on the insulating material layer, forming third and fourth metal pads on the graphene layer spaced apart from each other with the active area therebetween, the third and fourth metal pads extending above the first metal pad and the second metal pad, respectively, forming a first protection layer to cover all the first and second metal pads, the graphene layer, and the third and fourth metal pads, and etching an entire surface of the first protection layer until only a residual layer made of a material for forming the first protection layer remains on the active area.

    摘要翻译： 制造石墨烯装置的方法包括在基板上形成绝缘材料层，在彼此间隔开的绝缘材料层上形成第一和第二金属焊盘，形成石墨烯层，该石墨烯层被定义为第一和第 在所述绝缘材料层上的第二金属焊盘，在所述石墨烯层上形成第三和第四金属焊盘，所述第二金属焊盘与所述第一金属焊盘和所述第二金属焊盘分别在所述第一金属焊盘和所述第二金属焊盘之上分别延伸， 形成第一保护层以覆盖所有第一和第二金属焊盘，石墨烯层以及第三和第四金属焊盘，并且蚀刻第一保护层的整个表面，直到仅由形成第一和第二金属焊盘的材料制成的残留层 保护层保留在有效区域上。

    Nanosensors including graphene and methods of manufacturing the same
    5.
    发明授权
    Nanosensors including graphene and methods of manufacturing the same 有权
    包括石墨烯在内的纳米传感器及其制造方法

    公开(公告)号：US09341656B2

    公开(公告)日：2016-05-17

    申请号：US13846304

    申请日：2013-03-18

    申请人： Samsung Electronics Co., Ltd.

    发明人： Tae-han Jeon ,  Joo-ho Lee ,  Jeo-young Shim ,  Dong-ho Lee ,  Kun-sun Eom ,  Hee-jeong Jeong

    IPC分类号： G01N27/00 ,  G01R19/00 ,  G01N33/487 ,  B82Y15/00

    CPC分类号： G01R19/0092 ,  B82Y15/00 ,  G01N33/48721

    摘要： Nanosensors including graphene and methods of manufacturing the same. A nanosensor includes a first insulating layer in which a first nanopore is formed; a graphene layer that is disposed on the first insulating layer and having a second nanopore or a nanogap formed therein adjacent to the first nanopore; and a marker element that is disposed adjacent to the graphene layer and identifies a position of the graphene layer.

    摘要翻译： 包括石墨烯在内的纳米传感器及其制造方法。 纳米传感器包括其中形成第一纳米孔的第一绝缘层; 石墨烯层，其设置在所述第一绝缘层上并且具有与所述第一纳米孔相邻形成的第二纳米孔或纳米隙; 以及与石墨烯层相邻设置并识别石墨烯层的位置的标记元件。