公开(公告)号：US20220139714A1

公开(公告)日：2022-05-05

申请号：US17319503

申请日：2021-05-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changheon LEE ,  Sangki NAM ,  Taesun SHIN

IPC: H01L21/3065 ,  H01L21/67 ,  H01J37/32

Abstract: A substrate processing method includes inserting a substrate from an outside into a processing space, supplying a process gas from a gas supply unit to the processing space, producing plasma based on the process gas, performing an etching process for the substrate using ions included in the plasma, and discharging a processed gas produced in the etching process through a discharge part. The discharge part includes a first slit extending through a flange part, and a second slit connected to the first slit while extending through a side wall part connected to the flange part. A vertical length of the first slit is equal to a vertical length of the second slit. A horizontal length of the first slit is about 5 times to about 7 times the vertical length of the first slit.

公开(公告)号：US20240038510A1

公开(公告)日：2024-02-01

申请号：US18469208

申请日：2023-09-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changheon LEE ,  Sangki NAM ,  Taesun SHIN

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/67

CPC classification number: H01J37/32834 ,  H01L21/3065 ,  H01L21/67069 ,  H01J37/3244 ,  H01J37/32091 ,  H01J37/32642 ,  H01J37/32743 ,  H01J37/32568 ,  H01J37/3211 ,  H01J2237/334

Abstract: A substrate processing method includes inserting a substrate from an outside into a processing space, supplying a process gas from a gas supply unit to the processing space, producing plasma based on the process gas, performing an etching process for the substrate using ions included in the plasma, and discharging a processed gas produced in the etching process through a discharge part. The discharge part includes a first slit extending through a flange part, and a second slit connected to the first slit while extending through a side wall part connected to the flange part. A vertical length of the first slit is equal to a vertical length of the second slit. A horizontal length of the first slit is about 5 times to about 7 times the vertical length of the first slit.