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1.发明授权公开(公告)号：US11182105B2
公开(公告)日：2021-11-23
申请号：US16360547
申请日：2019-03-21
Applicant: Samsung Electronics Co., Ltd.
Inventor： SeokHeon Lee , Won-Gi Hong , Youngmin Lee
Abstract: A storage device may include a first storage area, a second storage area, and a controller. The controller may be configured to provide device information containing information on the first and second storage areas to an external host device, to allow a first access type of the external host device to the first storage area, and to allow a second access type of the external host device to the second storage area.
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公开(公告)号：US12219721B2
公开(公告)日：2025-02-04
申请号：US18529889
申请日：2023-12-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yusuf Cinar , Jae Hong Park , Han Hong Lee , Seon Gyun Baek , Won-Gi Hong
IPC: H05K5/02 , H01R12/70 , H01R12/72 , H01R12/73 , H01R13/621 , H05K5/00 , H05K7/20 , H01L25/18 , H05K1/11 , H05K1/18
Abstract: A memory device and an electronic device is provided. The memory device may include a memory module including a module board and a memory connector located on one side of the module board, a first enclosure placed above the memory module and a second enclosure placed below the memory module, wherein the first enclosure includes a first main cover which covers upper faces of the module board and the memory connector, at least one clamping hole which penetrates the main cover at a position overlapping the memory connector, an inter-device fastening pillar protruding downward from a lower face of the first main cover, and a coupling hole which is located inside the inter-device fastening pillar on a plane and penetrates the inter-device fastening pillar and the main cover.
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公开(公告)号：USD988318S1
公开(公告)日：2023-06-06
申请号：US29805535
申请日：2021-08-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Designer： Yusuf Cinar , Jae Hong Park , Han Hong Lee , Seon Gyun Baek , Won-Gi Hong
Abstract: FIG. 1 is a front perspective view of a solid state drive memory device showing my new design;
FIG. 2 is a front view thereof;
FIG. 3 is a rear view thereof;
FIG. 4 is a left-side view thereof;
FIG. 5 is a right-side view thereof;
FIG. 6 is a top plan view thereof;
FIG. 7 is a bottom plan view thereof; and,
FIG. 8 is another perspective view thereof.
The evenly dashed broken lines in the figures depict portions of the solid state drive memory device that form no part of the claimed design.-
公开(公告)号：US11877410B2
公开(公告)日：2024-01-16
申请号：US17217759
申请日：2021-03-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yusuf Cinar , Jae Hong Park , Han Hong Lee , Seon Gyun Baek , Won-Gi Hong
IPC: H05K5/02 , H01R12/70 , H01R12/72 , H01R12/73 , H01R13/621 , H05K5/00 , H05K7/20 , H01L25/18 , H05K1/11 , H05K1/18
CPC classification number: H05K5/0217 , H01R12/7023 , H01R12/721 , H01R12/73 , H01R13/621 , H05K5/0008 , H05K5/026 , H05K7/20409 , H01L25/18 , H05K1/117 , H05K1/181 , H05K7/20445 , H05K2201/09063 , H05K2201/10159
Abstract: A memory device and an electronic device is provided. The memory device may include a memory module including a module board and a memory connector located on one side of the module board, a first enclosure placed above the memory module and a second enclosure placed below the memory module, wherein the first enclosure includes a first main cover which covers upper faces of the module board and the memory connector, at least one clamping hole which penetrates the main cover at a position overlapping the memory connector, an inter-device fastening pillar protruding downward from a lower face of the first main cover, and a coupling hole which is located inside the inter-device fastening pillar on a plane and penetrates the inter-device fastening pillar and the main cover.
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公开(公告)号：USD997939S1
公开(公告)日：2023-09-05
申请号：US29805536
申请日：2021-08-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Designer： Yusuf Cinar , Jae Hong Park , Han Hong Lee , Seon Gyun Baek , Won-Gi Hong
Abstract: FIG. 1 is a front perspective view of a solid state drive memory device showing my new design;
FIG. 2 is a front view thereof;
FIG. 3 is a left-side view thereof; and,
FIG. 4 is a top plan view thereof.
The evenly dashed broken lines in the figures depict portions of the solid state drive memory device that form no part of the claimed design.-
Patent Agency Ranking
公开(公告)号：US11803436B2
公开(公告)日：2023-10-31
申请号：US17486341
申请日：2021-09-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Chul Ho Lee , Ki Jong Nam , Won-Gi Hong
CPC classification number: G06F11/076 , G01K3/005 , G06F3/0619 , G06F3/0659 , G06F3/0679 , G06F11/0727 , G06F11/3058 , G11C16/0483 , G11C16/10 , G11C16/26
Abstract: A storage device and a storage system including the same are provided. The storage device includes a nonvolatile memory with a valid page and a free page; a temperature sensor configured to sense a temperature of the nonvolatile memory; and a storage controller configured to implement: a patrol read module configured to read valid data stored in the valid page and identify a number of errors in the read valid data according to a set time period, and a retention module configured to, based on the temperature or the number of errors, read the valid data stored in the valid page, and write the valid data to the free page while controlling a threshold voltage distribution width corresponding to a value of the valid data written to the free page.
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公开(公告)号：USD998612S1
公开(公告)日：2023-09-12
申请号：US29805549
申请日：2021-08-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Designer： Yusuf Cinar , Jae Hong Park , Han Hong Lee , Seon Gyun Baek , Won-Gi Hong
Abstract: FIG. 1 is a front perspective view of a solid state drive memory device showing my new design;
FIG. 2 is a front view thereof; and,
FIG. 3 is a top plan view thereof.
The evenly dashed broken lines in the figures depict portions of the solid state drive memory device that form no part of the claimed design.-
公开(公告)号：USD997161S1
公开(公告)日：2023-08-29
申请号：US29805545
申请日：2021-08-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Designer： Yusuf Cinar , Jae Hong Park , Han Hong Lee , Seon Gyun Baek , Won-Gi Hong
Abstract: FIG. 1 is a front perspective view of a solid state drive memory device showing my new design;
FIG. 2 is a front view thereof; and,
FIG. 3 is a top plan view thereof.
The evenly dashed broken lines in the figures depict portions of the solid state drive memory device that form no part of the claimed design.-
公开(公告)号：USD986900S1
公开(公告)日：2023-05-23
申请号：US29805770
申请日：2021-08-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Designer： Yusuf Cinar , Jae Hong Park , Han Hong Lee , Seon Gyun Baek , Won-Gi Hong
Abstract: FIG. 1 is a front perspective view of a solid state drive memory device showing our new design;
FIG. 2 is a front view thereof;
FIG. 3 is a rear view thereof;
FIG. 4 is a left-side view thereof;
FIG. 5 is a right-side view thereof;
FIG. 6 is a top plan view thereof;
FIG. 7 is a bottom plan view thereof; and,
FIG. 8 is a bottom perspective view thereof.
The evenly dashed broken lines in the figures depict portions of the solid state drive memory device that form no part of the claimed design.-
公开(公告)号：US12248360B2
公开(公告)日：2025-03-11
申请号：US18372949
申请日：2023-09-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Chul Ho Lee , Ki Jong Nam , Won-Gi Hong
Abstract: A storage device and a storage system including the same are provided. The storage device includes a nonvolatile memory with a valid page and a free page; a temperature sensor configured to sense a temperature of the nonvolatile memory; and a storage controller configured to implement: a patrol read module configured to read valid data stored in the valid page and identify a number of errors in the read valid data according to a set time period, and a retention module configured to, based on the temperature or the number of errors, read the valid data stored in the valid page, and write the valid data to the free page while controlling a threshold voltage distribution width corresponding to a value of the valid data written to the free page.
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