公开(公告)号：US20180182623A1

公开(公告)日：2018-06-28

申请号：US15661418

申请日：2017-07-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yil-hyung LEE ,  Jongchul PARK ,  Jong-Kyu KIM ,  Jongsoon PARK

IPC: H01L21/033 ,  H01L21/311

CPC classification number: H01L21/0337 ,  H01L21/263 ,  H01L21/31116

Abstract: A method of forming fine patterns includes forming an upper mask layer on a substrate, forming preliminary mask patterns on the upper mask layer, and forming upper mask patterns by etching the upper mask layer using the preliminary mask patterns as etch masks. Forming the upper mask patterns includes etching the upper mask layer by performing an etching process using an ion beam. The upper mask patterns include a first upper mask pattern formed under each of the preliminary mask patterns, and a second upper mask pattern formed between the preliminary mask patterns in a plan view and spaced apart from the first upper mask pattern.

公开(公告)号：US20190189916A1

公开(公告)日：2019-06-20

申请号：US16284439

申请日：2019-02-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yil-hyung LEE ,  Jong-Kyu KIM ,  Jongchul PARK ,  Sang-Kuk KIM ,  Jongsoon PARK ,  Hyeji YOON ,  Woohyun LEE

IPC: H01L43/12 ,  H01L27/22

CPC classification number: H01L43/12 ,  H01L27/222

Abstract: An ion beam apparatus may include a chamber assembly configured to hold a material and direct an ion beam on the material, a detector configured to detect a signal generated from the material based on the ion beam being directed on the material, and a controller configured to control at least one parameter associated with the chamber assembly based on the signal, such that at least one of an ion energy associated with the ion beam, an ion current associated with the ion beam, and an incident angle of the ion beam with respect to a top surface of the material is changed continuously with time.