公开(公告)号：US20190165257A1

公开(公告)日：2019-05-30

申请号：US15970963

申请日：2018-05-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woohyun LEE ,  Sang-Kuk KIM ,  Oik KWON ,  lnho KIM ,  Jongchul PARK ,  Kwangyoung OH

IPC: H01L43/08 ,  H01F10/32 ,  H01L43/02 ,  H01L27/22 ,  G11C11/16

CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C11/1659 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/1087 ,  H01L27/222 ,  H01L43/02 ,  H01L43/10

Abstract: A magnetic memory device includes a lower interlayer insulating layer on a substrate, and a plurality of magnetic tunnel junction patterns on the lower interlayer insulating layer and isolated from direct contact with each other in a direction extending parallel to a top surface of the substrate. The lower interlayer insulating layer includes an upper surface including a recessed surface and a top surface, the recessed surface at least partially defining an inner sidewall and a bottom surface of a recess region between adjacent magnetic tunnel junction patterns, such that the recessed surface at least partially defines the recess region. The inner sidewall is inclined at an acute angle with respect to the top surface of the substrate, and the bottom surface has a shape that is convex toward the top surface of the substrate, in direction extending perpendicular to the top surface of the substrate.

公开(公告)号：US20190189502A1

公开(公告)日：2019-06-20

申请号：US16015809

申请日：2018-06-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Inho Kim ,  Woohyun LEE ,  Oik KWON ,  Sang-Kuk KIM ,  Yeonji KIM ,  Jongchul PARK

IPC: H01L21/768 ,  H01L27/22 ,  H01L43/12

CPC classification number: H01L21/76816 ,  H01L21/76804 ,  H01L27/11573 ,  H01L27/224 ,  H01L27/228 ,  H01L43/02 ,  H01L43/12

Abstract: A semiconductor device includes a first lower insulating interlayer, a protection insulating layer, and a first upper insulating interlayer that are sequentially stacked on a substrate, and a conductive pattern penetrating the first upper insulating interlayer, the protection insulating layer; and the first lower insulating interlayer. The conductive pattern includes a line part extending in a direction parallel to an upper surface of the substrate and contact parts extending from the line part toward the substrate. The contact parts are separated from each other with an insulating pattern therebetween. The insulating pattern includes a portion of each of the first upper insulating interlayer, the protection insulating layer, and the first lower insulating interlayer. At least a portion of the insulating pattern has a stepped profile.

公开(公告)号：US20190165261A1

公开(公告)日：2019-05-30

申请号：US16009556

申请日：2018-06-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Kuk KIM ,  Oik KWON ,  Dongkyu LEE ,  Kyungil HONG

IPC: H01L43/12 ,  H01L27/22 ,  H01L43/02

Abstract: A method of fabricating a magnetic memory device may include forming a magnetic tunnel junction layer on a substrate, sequentially forming a top electrode pattern and a mask pattern on the magnetic tunnel junction layer, patterning the magnetic tunnel junction layer using the mask pattern and the top electrode pattern as a first etch mask to form a magnetic tunnel junction pattern, forming a protection layer on side surfaces of the mask pattern, the top electrode pattern, and the magnetic tunnel junction pattern, the protection layer being extended to cover a first top surface of the mask pattern, removing a portion of the protection layer on the first top surface of the mask pattern to expose the first top surface of the mask pattern, and removing the mask pattern to expose a second top surface of the top electrode pattern.

公开(公告)号：US20210167283A1

公开(公告)日：2021-06-03

申请号：US17169759

申请日：2021-02-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongchul PARK ,  Sang-Kuk KIM

IPC: H01L43/12 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08

Abstract: A method of manufacturing a data storage device may include forming a magnetic tunnel junction layer on a substrate, irradiating a first ion beam on the magnetic tunnel junction layer to form magnetic tunnel junction patterns separated from each other, irradiating a second ion beam on the magnetic tunnel junction layer, and irradiating a third ion beam on the magnetic tunnel junction layer. The first ion beam may be irradiated at a first incident angle. The second ion beam may be irradiated at a second incident angle that may be smaller than the first incident angle. The third ion beam may be irradiated to form sidewall insulating patterns on sidewalls of the magnetic tunnel junction patterns based on re-depositing materials separated by the third ion beam on the sidewalls of the magnetic tunnel junction patterns.

公开(公告)号：US20200235291A1

公开(公告)日：2020-07-23

申请号：US16837424

申请日：2020-04-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongchul PARK ,  Sang-Kuk KIM

IPC: H01L43/12 ,  H01L43/08 ,  H01L43/02 ,  H01L27/22

Abstract: A method of manufacturing a data storage device may include forming a magnetic tunnel junction layer on a substrate, irradiating a first ion beam on the magnetic tunnel junction layer to form magnetic tunnel junction patterns separated from each other, irradiating a second ion beam on the magnetic tunnel junction layer, and irradiating a third ion beam on the magnetic tunnel junction layer. The first ion beam may be irradiated at a first incident angle. The second ion beam may be irradiated at a second incident angle that may be smaller than the first incident angle. The third ion beam may be irradiated to form sidewall insulating patterns on sidewalls of the magnetic tunnel junction patterns based on re-depositing materials separated by the third ion beam on the sidewalls of the magnetic tunnel junction patterns.

公开(公告)号：US20190189916A1

公开(公告)日：2019-06-20

申请号：US16284439

申请日：2019-02-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yil-hyung LEE ,  Jong-Kyu KIM ,  Jongchul PARK ,  Sang-Kuk KIM ,  Jongsoon PARK ,  Hyeji YOON ,  Woohyun LEE

IPC: H01L43/12 ,  H01L27/22

CPC classification number: H01L43/12 ,  H01L27/222

Abstract: An ion beam apparatus may include a chamber assembly configured to hold a material and direct an ion beam on the material, a detector configured to detect a signal generated from the material based on the ion beam being directed on the material, and a controller configured to control at least one parameter associated with the chamber assembly based on the signal, such that at least one of an ion energy associated with the ion beam, an ion current associated with the ion beam, and an incident angle of the ion beam with respect to a top surface of the material is changed continuously with time.

公开(公告)号：US20180158867A1

公开(公告)日：2018-06-07

申请号：US15602469

申请日：2017-05-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Kuk KIM ,  Jong-Kyu Kim ,  Jong-Chul Park ,  Jong-Soon Park ,  Hye-Ji Yoon ,  Woo-Hyun Lee

IPC: H01L27/22 ,  H01L43/12 ,  H01L43/02 ,  H01L43/08

CPC classification number: H01L27/228 ,  H01L27/222 ,  H01L29/4236 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: Manufacturing an MRAM device may include forming an upper electrode on a magnetic tunnel junction stack, where the stack may include a lower electrode layer, a magnetic tunnel junction layer and a middle electrode layer that are sequentially formed on an insulating interlayer and a lower electrode contact on a substrate. The upper electrode may be formed on the middle electrode layer. An upper electrode protective structure may be formed to cover at least a sidewall and an upper surface of the upper electrode. The middle electrode layer, the magnetic tunnel junction layer and the lower electrode may be patterned by an etching process to form a middle electrode, a magnetic tunnel junction pattern and a lower electrode, respectively. The upper electrode protective structure may isolate the upper electrode from exposure during the patterning, and the upper electrode protective structure may remain on the upper electrode subsequently to the patterning.